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DATA SH EET
Product data sheet 2003 Aug 20
DISCRETE SEMICONDUCTORS
1PS10SB82
Schottky barrier diode
M3D891
BOTTOM VIEW
2003 Aug 20 2
NXP Semiconductors Product data sheet
Schottky barrier diode 1PS10SB82
FEATURES
•Low forward vo lta ge
•Low diode capacitance
•Leadless ultra small plastic package
(1.0 mm × 0.6 mm × 0.5 mm)
•Boardspace 1.17 mm2 (approx. 10% of SOT23)
•Power dissipation comparable to SOT23.
APPLICATIONS
•UHF mixers
•Sampling circuits
•Modulators
•Phase detecto rs
•Mobile communication, digital (still) cameras, PDA’s and
PCMCIA cards.
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling pr ecautions.
handbook, halfpage
MDB391
Bottom view
Fig.1 Simplified outline (SOD882 ), pin
configuration and symbol.
Marking code: S5.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
VRcontinuous revers e voltage −15 V
IFcontinuous forward current −30 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
2003 Aug 20 3
NXP Semiconductors Pr oduct data sheet
Schottky barrier diode 1PS10SB82
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTE RISTICS
Note
1. Refer to SOD 88 2 standard mounting conditions (footpr int), FR4 with 60 μm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage see Fig.2
IF = 1 mA −340 mV
IF = 30 mA −700 mV
rDdifferential diode fo rward resistance f = 1 MHz; IF = 5 mA; see Fig.5 12 − Ω
IRcontinuous rev ers e current VR = 1 V; see Fig.3; note 1 −0.2 μA
Cddiode capacit an ce VR = 0 V; f = 1 MHz; see Fig.4 1−pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2003 Aug 20 4
NXP Semiconductors Pr oduct data sheet
Schottky barrier diode 1PS10SB82
GRAPHICAL DATA
handbook, halfpage
1.60
(1) (3)
0.4 0.8 1.2 VF (V)
IF
(mA)
103
102
10
1
MLE112
(2)
(2)
(1)
(3)
Fig.2 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
1510 VR (V)
IR
(μA)
50
MLE113
103
102
10
1
10−1
10−2
(3)
(1)
(2)
Fig.3 Reverse current a s a fun ction of rev er se
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
02 10
1.2
1
0.6
0.4
0.8
4VR (V)
Cd
(pF)
68
MLE114
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
handbook, halfpage
103
102
10
1
MLE115
10−11IF (mA)
rD
(Ω)
10 102
Fig.5 Differential diode forward resis tanc e as a
function of forward current; typical values.
f = 1 MHz; Tamb = 25 °C.
2003 Aug 20 5
NXP Semiconductors Pr oduct data sheet
Schottky barrier diode 1PS10SB82
PACKAGE OUTLINE
UNIT A1
max.
A(1) be
1L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.55
0.47
0.03 0.62
0.55 0.65
DIMENSIONS (mm are the original dimensions)
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
0.30
0.22
SOD882 03-04-16
03-04-17
DE
1.02
0.95
L
E
(2)
2
1b
A1
A
D
L
L
eadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD88
2
0 0.5 1 mm
scale
e1
2003 Aug 20 6
NXP Semiconductors Pr oduct data sheet
Schottky barrier diode 1PS10SB82
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or completing a design.
2. The product s ta tus of device(s ) described in this do cument may have changed since this do cument was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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reserves the right to make changes to information
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not fo rm p ar t o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/01/pp7 Date of release: 2003 Aug 20 Document orde r number: 9397 750 11309
