TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP34 Series 80 W at 25C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIP33 80 TIP33A 100 E T E L O S B O TIP33B V CBO 140 TIP33 40 TIP33A TIP33B VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current UNIT 120 TIP33C TIP33C Emitter-base voltage VALUE 60 80 V V 100 VEBO 5 V IC 10 A ICM 15 A IB 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 3.5 W 1/2LIC2 62.5 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 250 C Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.64 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) TIP33 40 TIP33A 60 TIP33B 80 TIP33C 100 TYP MAX V VCE = 80 V VBE = 0 TIP33 0.4 Collector-emitter VCE = 100 V VBE = 0 TIP33A 0.4 cut-off current VCE = 120 V VBE = 0 TIP33B 0.4 VCE = 140 V VBE = 0 TIP33C 0.4 Collector cut-off VCE = 30 V IB = 0 TIP33/33A 0.7 current VCE = 60 V IB = 0 TIP33B/33C 0.7 VEB = 5V IC = 0 Forward current VCE = 4V IC = 1A transfer ratio VCE = 4V IC = 3A Collector-emitter IB = 0.3 A IC = 3A saturation voltage IB = 2.5 A IC = 10 A Emitter cut-off current Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = IC = 4V 1 20 mA mA 100 1 (see Notes 5 and 6) 3A mA 40 (see Notes 5 and 6) V 4 1.6 (see Notes 5 and 6) E T E L O S B O VCE = UNIT 4V IC = 10 A VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 3 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 1.56 C/W RJA Junction to free air thermal resistance 35.7 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 6 A IB(on) = 0.6 A IB(off) = -0.6 A toff Turn-off time VBE(off) = -4 V RL = 5 tp = 20 s, dc 2% 0.6 s 1 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS633AA VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% 100 10 1*0 0*01 0*1 TCS633AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = IC = IC = IC = 1*0 0*1 E T E L O S B O 1*0 0*01 0*01 10 1A 3A 6A 10 A IC - Collector Current - A 0*1 1*0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*8 TCS633AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25C 1*6 1*4 1*2 1*0 0*8 0*6 0*1 1 10 IC - Collector Current - A Figure 3. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS633AA tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 TIP33 TIP33A TIP33B TIP33C E T E L O S B O 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.