A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 2 mA 15 V
BVCBO IC = 1.0 µA30
V
ICBO VCB = 6.0 V
TA = 150 OC10
1.0 µ
µµ
µA
BVEBO IE = 10 µA3.0
V
hFE VCE = 6.0 V IC = 5.0 mA 20 150 ---
Cob VCB = 6 V f = 1.0 MHz 0.75 pF
hFE VCE = 6 V IC = 5 mA 20 150 ---
hfe
VCE = 6 V IC = 5 mA f = 400 MHz 3.75 4.25 6 ---
rb´
´´
´CCVCB = 6 V IE = -5 mA f = 79.8 MHz 1 5 8 pF
POSC VCC = 20 V IC = 15 mA f = 1.0 GHz 60 mW
NFVCB = 6 V IC = 2 mA RG = 50 Ω f = 1.0 GHz 6 7 dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3570
DESCRIPTION:
The 2N3570 is Desig ned for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
IC50 mA
VCB 30 V
VCE 15 V
VEB 3.0 V
PDISS 200 mW @ T C = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 500 OC/W
PACKAGE STYLE TO- 72
1 = EMITTER 2 = BASE
3 = COLLECTOR 4 = CASE
