BAS28 DUAL, ISOLATED HIGH SPEED SWITCHING DIODE SOT-143 CASE MAXIMUM RATINGS (T,=25C) Continuous Reverse Voltage Peak Repetitive Reverse Voitage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 usec. Forward Surge Current, tp=1 msec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage ' Junction Temperature Thermal Resistance Central . DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high speed switching applications. Marking code is A61. SYMBOL VR 75 VRRM 85 Ie 250 lFRM 250 leEsm 4000 IFSM 2000 IFSM 1000 Pp 350 TT stg -65 to +150 OA . 357 ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=25V, Ta=1 50C IR VR=75V Ir VR=75V, Ta=150C VE iF=1.0mA VE IF=10mA Ve |-=50mA Ve lp=150mA Cr Vp=0, f=1 MHz ter iF=lR=10mA, R_=100Q, Rec. to 1.0mA Qs IpF=10mA, VR=5.0V, R_ =500Q VER lr=10mA, t-=20ns 86 MAX 30 1.0 50 0.715 0.855 1.000 1.250 2.0 6.0 45 1.75 UNITS mA mA mA mA mA mw C OCW UNITSAll dimensions in inches (mm). ~110(2.79) -118(3.00) .004(0.10) 008 (0.13) .o7ece.or,, 1 , ts 1. 4_3 6 x fF a .098(2.469) .047(1.19) MAX | MUM -051(1.30) oy rH 2 .003(0.08) + + -005(0.13) .030(0.78) | b- 4 | .014(0.96) .037(0.94) .033(0.84)) | | M018 (0. 46) -043(1.09) 074(1.80); ora, LEAD CODE: 1) CATHODE 1 2) CATHODE 2 3) ANODE 2 4) ANODE 1 DATA SHEET R2 87