Power Transistor Arrays PUA3122 (PU3122) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm Features 9.50.2 1.650.2 * Built-in zener diode (30 V) between collector and base * Small variation in withstand pressure * Large energy handling capability * High-speed switching * NPN 3 elements Solder Dip 5.30.5 4.40.5 0.80.25 Absolute Maximum Ratings TC = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 305 V Collector-emitter voltage (Base open) VCEO 305 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 4 A Peak collector current ICP 8 A 15 W Collector power dissipation PC Ta = 25C 4.00.2 8.00.2 20.20.3 0.50.15 1.00.25 2.540.2 0.50.15 7 x 2.57 = 17.780.25 C 1.50.5 1: Emitter 2: Base 3: Collector 1 2 3 4 5 6 7 8 4: Base 5: Collector 6: Base 7: Collector 8: Emitter SIP8-A1 Package 2.4 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics TC = 25C 3C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 5 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 100 A Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 2 mA hFE1 Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Conditions Min Typ 25 Max Unit 35 V VCE = 3 V, IC = 0.5 A 1 000 hFE2 *1 VCE = 3 V, IC = 3 A 1 000 VCE(sat) IC = 3 A, IB = 12 mA 2.0 IC = 5 A, IB = 20 mA 4.0 VBE(sat) 10 000 IC = 3 A, IB = 12 mA 2.5 V V fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 3 A 0.3 s Storage time tstg IB1 = 12 mA, IB2 = -12 mA 3.0 s tf VCC = 20 V Transition frequency Fall time Energy handling capability *2 Es/b IC = 2 A, L = 100 mH, RBE = 100 1.0 200 s mJ Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Rank classification *2: Es/b test circuit X Mercury relay Rank Free P Q L hFE 1 000 to 10 000 2 000 to 10 000 1 000 to 5 000 Y RBE Z Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJK00012AED 1 PUA3122 Internal Connection 5 4 2 7 Collector power dissipation PC (W) 3 PC Ta 20 6 1 8 16 (1) TC = Ta (2) With a 50 x 50 x 2 mm Al heat sink (3) With a 50 x 25 x 2 mm Al heat sink (4) Without heat sink (1) 12 8 (2) (3) 4 0 (4) 0 40 80 120 160 Ambient temperature Ta (C) IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA 3 0.4 mA 2 0.2 mA 1 0 0 1 2 3 4 5 10 TC = 100C 25C 1 -25C 0.1 0.01 0.01 Collector-emitter voltage VCE (V) -25C 103 102 10 0.01 0.1 1 Collector current IC (A) 2 IC / IB = 250 10 TC = -25C 1 100C 25C 0.1 0.01 0.01 10 0.1 10 200 mJ 1 0.1 Safe operation area Non repetitve pulse TC = 25C (per circuit) 10 100 Coil L (mH) SJK00012AED 1 000 ICP 10 t = 1 ms t = 10 ms 1 0.1 0.01 1 10 100 RBE = 100 TC = 25C 10 0.01 1 Collector current IC (A) Guidance load characteristic TC = 100C 25C 1 100 VCE = 3 V Collector current IC (A) Forward current transfer ratio hFE 104 0.1 100 Collector current IC (A) hFE IC 105 VBE(sat) IC IC / IB = 250 Collector current IC (A) 4 100 Base-emitter saturation voltage VBE(sat) (V) TC = 25C 5 Collector current IC (A) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 6 1 10 100 1 000 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP