Power Transistor Arrays
1
Publication date: March 2004 SJK00012AED
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30±5V
Collector-emitter voltage (Base open) VCEO 30±5V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC4A
Peak collector current ICP 8A
Collector power dissipation PC15 W
Ta = 25°C 2.4
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 5 mA, IB = 02535V
Collector-base cutoff current (Emitter open)
ICBO VCB = 25 V, IE = 0 100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 5 V, IC = 02mA
Forward current transfer ratio hFE1 VCE = 3 V, IC = 0.5 A 1
000
hFE2 *1VCE = 3 V, IC = 3 A 1
000 10
000
Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 12 mA 2.0 V
IC = 5 A, IB = 20 mA 4.0
Base-emitter saturation voltage VBE(sat) IC = 3 A, IB = 12 mA 2.5 V
Transition frequency fTVCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz
Turn-on time ton IC = 3 A 0.3 µs
Storage time tstg IB1 = 12 mA, IB2 = −12 mA 3.0 µs
Fall time tfVCC = 20 V 1.0 µs
Energy handling capability *2Es/b IC = 2 A, L = 100 mH, RBE = 100 Ω200 mJ
■Electrical Characteristics TC = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification *2: Es/b test circuit
Rank Free P Q
hFE 1
000 to 10
000 2
000 to 10
000 1
000 to 5
000
PUA3122 (PU3122)
Silicon NPN triple diffusion planar type darlington
For power amplification
■Features
•Built-in zener diode (30 V) between collector and base
•Small variation in withstand pressure
•Large energy handling capability
•High-speed switching
•NPN 3 elements
■Absolute Maximum Ratings TC = 25°C
X
L
RBE
Mercury relay
Y
Z
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
20.2±0.3
2.54±0.2
7 × 2.57 = 17.78±0.25
12345678
1.0±0.25
0.5±0.15
0.8±0.25
C 1.5±0.5
0.5±0.15
9.5±0.2
8.0±0.2
4.4±0.5
1.65±0.2
Solder Dip
5.3±0.5
4.0±0.2
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
PUA3122
2SJK00012AED
IC VCE VCE(sat) ICVBE(sat) IC
hFE ICGuidance load characteristic Safe operation area
0 16080 12040
0
20
16
12
4
8
(1) T
C
= T
a
(2) With a 50 × 50 × 2 mm
Al heat sink
(3) With a 50 × 25 × 2 mm
Al heat sink
(4) Without heat sink
(1)
(2)
(3)
(4)
Collector power dissipation P
C
(W)
Ambient temperature T
a
(°C)
054132
0
2
1
3
4
5
6
TC = 25°C
IB = 2.0 mA
1.6 mA
1.8 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
Collector current IC (A)
Collector-emitter voltage VCE (V)
0.01 0.1 1 10
0.01
100 IC / IB = 250
0.1
1
10
25°C
−25°C
TC = 100°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
0.01 0.1 1 10
0.01
100 IC / IB = 250
0.1
1
10
25°C
100°C
TC = −25°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)
0.01 0.1 1 10
VCE = 3 V
105
104
103
102
10
−25°C
TC = 100°C
25°C
Forward current transfer ratio hFE
Collector current IC (A)
1 10 100 1
000
0.01
100
0.1
1
10
R
BE
= 100 Ω
T
C
= 25°C
200 mJ
Collector current IC (A)
Coil L (mH)
1 10 100 1
000
0.01
0.1
1
10
100
Non repetitve pulse
T
C
= 25°C
(
per circuit
)
t = 10 ms
t = 1 ms
I
CP
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
PC Ta
■Internal Connection
1 8
2
35
4
7
6
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tions satisfy your requirements.
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2003 SEP
