KST-8001-002 1
STB1132
PNP Silicon Transistor
Description
• Medium power amplifier
Features
• PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used)
• Low collector saturation voltage : VCE(sat)=-0.2V(Typ.)
• Complementary pair with STD1664
Ordering Information
Type NO. Marking Package Code
STB1132 A1 SOT-89
: hFE rank, monthly code
Outline Dimensions unit : mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Connections
1. Base
2. Collector
3. Emitter
4.0
0.50±0.1
1.82±0.05
0~0.1
1.5 -0.1
+0.2
3
1
2
4.5
-0.3
+0.5
2.5 -0.3
+0.2 1.00±0.3
-0.1
+0.2
0.52±0.05
0.42±0.05
0.42 -0.02
+0.04
0.15 Typ.
KST-8001-002 2
STB1132
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -40 V
Collector-Emitter voltage VCEO -32 V
Emitter-Base voltage VEBO -5 V
Collector current IC -1 A
PC 0.5
Collector dissipation PC* 2 W
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -40 - - V
Collector-Emitter breakdown voltage BVCEO I
C=-1mA, IB=0 -32 - - V
Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V
Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 µA
Collector cut-off current ICES VCE=-30V, IC=0 - - -0.1 µA
Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 µA
DC current gain hFE* VCE=-3V, IC=-0.1A 100 - 320 -
Collector-Emitter saturation voltage VCE(sat) I
C=-500mA, IB=-50mA - -0.2 -0.8 V
Transition frequency fT VCE=-5V, IC=-50mA,
f=30MHz - 150 - MHz
Collector output capacitance Cob V
CB=-10V, IE=0, f=1MHz - 20 30 pF
* : hFE rank / O : 100 ~ 200, Y : 160 ~ 320
KST-8001-002 3
STB1132
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 3 IC - VCE Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
Fig. 1 PC - Ta
