TPCP8503 TOSHIBA Transistor Silicon NPN Triple Diffused Type TPCP8503 High-Voltage Switching Applications Unit: mm 0.330.05 0.05 M A High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) 2.40.1 * * (IC = 20 mA, IB = 0.5 mA) 0.475 1 Absolute Maximum Ratings (Ta = 25C) 4 B Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 600 V Emitter-base voltage VEBO 7 V DC IC 50 Pulse ICP 100 IB 25 mA 2.2 W 1.1 Tj Tstg Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range t=10s DC PC 0.05 M B 0.65 2.90.1 Characteristics 2.80.1 5 8 A 0.80.05 S S 0.025 0.28 +0.1 -0.11 0.170.02 1.12 +0.13 -0.12 1.12 +0.13 -0.12 mA 1. NC 5. NC 0.28 +0.1 -0.11 2. COLLECTOR 6. EMITTER 3. COLLECTOR 7. NC W 4. COLLECTOR 8. BASE 150 C JEDEC -55 to 150 C JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3V1D temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 TPCP8503 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 600 V, IE = 0 100 A Emitter cut-off current IEBO VEB = 7 V, IC = 0 100 A V Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage VCEO IC = 1 mA, IB = 0 600 hFE (1) VCE = 5 V, IC = 1 mA 80 hFE (2) VCE = 5 V, IC = 20 mA 100 300 IC = 20 mA, IB = 0.5 mA 1.0 V Base-emitter voltage VCE (sat) VBE VCE = 5 V, IC = 20 mA 1.1 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 5.5 pF Figure1. Circuit Configuration 8 7 6 Figure2. Marking(Note 3) 5 8503 1 2 3 Type Lot No. 4 Note 1 : Please use devices on condition that the junction temperature is below 150. 2 Note 2 : Mounted on FR4 board( glass epoxy, 1.6mm thick, Cu area: 645mm ) Note 3 : on lower left of the marking indicates Pin 1. Weekly code: (three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-16 TPCP8503 IC - VCE 100 5 hFE - IC 4 1000 3 300 DC current gain hFE Collector current IC (mA) 2 80 1 60 0.5 40 0.2 IB = 0.1 mA 20 0 0 2 4 6 8 Collector-emitter voltage VCE 25 100 Ta = -55C 30 10 3 Common emitter Ta = 25C 100 Common emitter VCE = 5 V 1 0.1 10 0.3 1 VCE (sat) - IC 0.1 -55 0.03 0.3 1 10 3 Collector current IC 30 3 IC/IB = 5 25 VBE (sat) (V) Base -emitter saturation voltage (V) VCE (sat) Collector-emitter saturation voltage 25 Ta = 100C 1 0.3 Ta = -55C 100 0.1 0.03 0.01 0.1 100 0.3 (mA) VCE (sat) - IC 100 (mA) Common emitter 3 1 25 Ta = 100C -55 0.1 0.03 0.3 1 3 Collector current IC 10 30 3 1 0.3 (mA) Ta = -55C 100 0.1 0.03 0.01 0.1 100 IC/IB = 40 25 VBE (sat) (V) IC/IB = 40 Base -emitter saturation voltage (V) 30 VBE (sat) - IC 10 VCE (sat) 10 10 Common emitter Collector-emitter saturation voltage 3 1 Collector current IC 100 0.01 0.1 (mA) Common emitter IC/IB = 5 0.3 0.3 100 VBE (sat) - IC 1 30 30 10 Common emitter 0.01 0.1 10 Collector current IC (V) 10 3 3 0.3 1 3 Collector current IC 3 10 30 100 (mA) 2006-11-16 TPCP8503 rth - tw rth (C/W) 100 10 Curves should be applied in thermal limited area. (Single non-repetitive pulse) Ta=25 Mounted on FR4 board 2 Cu pad 645mm ,glass epoxy, t=1.6mm 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area IC MAX. (PULSE) 100 10 ms 10 s* 1 ms 100 s 100 ms* IC MAX.( CONTINUOUS) DC OPERATION * (Ta=25) 10 :Single non-repetitive pulse Ta=25 Note that the curves for 100ms*,10s* and DC operation Will be different when the devices aren't mounted on an FR4 board(glass epoxy, 1.6mm thick, Cu area: 645mm2) Curves must be de-rated linearly with increase in temperature. 1 1 10 VCEO MAX. (mA) 1000 Collector current IC Transient thermal resistance 1000 100 Collector-emitter voltage 4 VCE 1000 (V) 2006-11-16 TPCP8503 RESTRICTIONS ON PRODUCT USE 060116EAA * The information contained herein is subject to change without notice. 021023_D * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. 021023_A * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 021023_B * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C 5 2006-11-16