TPCP8503 - Toshiba America Electronic Components, Inc.

TPCP8503

2006-11-16

TOSHIBA Transistor Silicon NPN Triple Diffused Type

TPCP8503

High-Voltage Switching Applications

• High breakdown voltage: VCEO = 600 V

• Low saturation voltage: VCE (sat) = 1.0 V (max)

(IC = 20 mA, IB = 0.5 mA)

Absolute Ma ximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 600 V

Collector-emitter voltage VCEO 600 V

Emitter-base voltage VEBO 7 V

DC IC 50

Collector current (Note 1)

Pulse ICP 100

Base current IB 25 mA

t=10s 2.2 W

Collector power dissipation

(Note 2) DC

1.1 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

0.33±0.05

0.28+0.1

-0.11

1.12+0.13

-0.12

2.4±0.1

0.475

0.65

2.8±0.1

0.05 M

2.9±0.1

0.8±0.05

0.17±0.02

0.05 M

0.025

1.12+0.13

-0.12

0.28+0.1

-0.11

JEDEC ―

JEITA ―

TOSHIBA 2-3V1D

Weight: 0.36 g (typ.)

1. NC 5. NC

2. COLLECTOR 6. EMITTER

3. COLLECTOR 7. NC

4. COLLECTOR 8. B

TPCP8503

2006-11-16

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO V

CB = 600 V, IE = 0 ― ― 100 µA

Emitter cut-off current IEBO V

EB = 7 V, IC = 0 ― ― 100 µA

Collector-emitter breakdown voltage VCEO I

C = 1 mA, IB = 0 600 ― ― V

hFE (1) V

CE = 5 V, IC = 1 mA 80 ― ―

DC current gain

hFE (2) V

CE = 5 V, IC = 20 mA 100 ― 300

Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 0.5 mA ― ― 1.0 V

Base-emitter voltage VBE V

CE = 5 V, IC = 20 mA ― ― 1.1 V

Collector output capacitance Cob V

CB = 10 V, IE = 0, f = 1 MHz ― 5.5 ― pF

Figure1. Circuit Configuration Figure2. Marking(Note 3)

Note 1 : Please use devices on condition that the junction temperature is below 150℃.

Note 2 : Mounted on FR4 board( glass epoxy, 1.6mm thick, Cu area: 645mm2)

Note 3 :● on lower left of the marking indicates Pin 1.

※ Weekly code: (three digits)

1 2 3 4

8 7 6 5

8503

Lot No.

Type

※

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

TPCP8503

2006-11-16

IC – VCE

hFE – IC

VCE (sat) – IC

VBE (sat) – IC

VCE (sat) – IC

VBE (sat) – IC

Collector-emitter voltage VCE (V)

Collector current IC (mA)

DC current gain hFE

Collector current IC (mA)

Base −emitter saturation voltage

VBE (sat) (V)

Collector-emitter saturation voltage

VCE (sat) (V)

Base −emitter saturation voltage

VBE (sat) (V)

Collector-emitter saturation voltage

VCE (sat) (V)

0.2

0.5

3 4 5

Common emitter

Ta = 25°C

IB = 0.1 mA

2 4 6 8 10

100

Ta = −55°C

100

Common emitter

VCE = 5 V

0.1 1 10 100 0.3 3 30

100

1000

300

−55

Ta = 100°C

0.01

0.1

Common emitter

IC/IB = 5

1 10 100

0.1

0.03

0.3

0.3 330

100

Ta = −55°C

0.01

0.1

Common emitter

IC/IB = 5

1 10 100

0.1

0.03

0.3

0.3 330

100

Ta = −55°C

0.01

0.1

Common emitter

IC/IB = 40

1 10 100

0.1

0.03

0.3

0.3 330

−55

Ta = 100°C

0.01

0.1 1 10 100

0.1

100

0.03

0.3

0.3 330

Common emitter

IC/IB = 40

TPCP8503

2006-11-16

rth – tw

Pulse width tw (s)

Transient thermal resistance

rth (°C/W)

0.001 0.01 0.1 1 10 100 1000

100

1000

Curves should be applied in thermal limited area.

(Single non-repetitive pulse) Ta = 2 5 ℃

Mounted on FR4 board

（Cu pad 645mm2,glass epoxy, t=1.6mm）

Safe operating area

Collector-emitter voltage VCE (V)

Collector current IC (mA)

1 10 100 1000

100

1000

100 ms※*

IC MAX. (PULSE)※

VCEO MAX.

1 ms※

※:Single non-repetitive pulse Ta = 2 5 ℃

Note that the curves for 100ms*,10s* and

DC operation Will be different when the

devices aren’t mounted on an FR4

board(glass epoxy, 1.6mm thick, Cu area:

645mm2)

Curves must be de-rated linearly with

increase in temperature.

IC MAX.( CONTINUOUS)

10 ms※100 µs※

10 s※*

DC OPERATION *

(Ta=25℃)

TPCP8503

2006-11-16

RESTRICTION S ON PRODUCT USE 060116EAA

• The information contained herein is subject to change without notice. 021023_D

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc. 021023_A

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk. 021023_B

• The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

TOSHIBA or others. 021023_C