B40C1500G thru B380C1500G
Vishay General Semiconductor
Document Number: 88501
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
Ideal for printed circuit boards
High case dielectric strength
High surge current capability
Typical IR less than 0.1 µA
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for power supply, adapter, charger,
lighting ballaster on consumers and home appliances
applications.
MECHANICAL DATA
Case: WOG
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
e4
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 65 V to 600 V
IFSM 50 A
IR10 µA
VF1.0 V
TJ max. 125 °C
Case Style WOG
+
~
~
+
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
B40
C1500G
B80
C1500G
B125
C1500G
B250
C1500G
B380
C1500G UNIT
Maximum repetitive peak reverse voltage VRRM 65 125 200 400 600 V
Maximum RMS input voltage R- and C-load VRMS 40 80 125 250 380 V
Maximum DC blocking voltage VDC 65 125 200 400 600 V
Maximum peak working voltage VRWM 90 180 300 600 800 V
Maximum non-repetitive peak voltage VRSM 100 200 350 600 1000 V
Maximum repetitive peak forward surge current IFRM 10 A
Maximum average forward output current for
free air operation at TA = 45 °C
R- and L-load
C-load IF(AV)
1.6
1.5 A
Peak forward surge current single sine-wave on rated load IFSM 50 A
Rating for fusing at TJ = 125 °C (t < 100 ms) I2t 12.5 A2s
Minimum series resistor C-load at VRMS = ± 10 % Rt 1.0 2.0 4.0 8.0 12 Ω
Maximum load capacitance + 50 %
- 10 % CL 5000 2500 1000 500 200 µF
Operating junction temperature range TJ- 40 to + 125 °C
Storage temperature range TSTG - 40 to + 150 °C
B40C1500G thru B380C1500G
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88501
Revision: 15-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. at 0.375" (9.5 mm) lead lengths with 0.22 x 0.22"
(5.5 x 5.5 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL B40
C1500G
B80
C1500G
B125
C1500G
B250
C1500G
B380
C1500G UNIT
Maximum instantaneous forward voltage
drop per diode 1.5 A VF 1.0 V
Maximum reverse current at rated
repetitive peak voltage per diode TA = 25 °C IR 10 µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
B40
C1500G
B80
C1500G
B125
C1500G
B250
C1500G
B380
C1500G UNIT
Typical thermal resistance (1) RθJA
RθJL
36
11 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B380C1500G-E4/51 1.12 51 100 Plastic bag
Figure 1. Derating Curves Output Rectified Current for
B40C1500G...B125C1500G
0
0.2
0.4
0.6
1.2
1.4
1.6
1.0
0.8
20 40 60 80 100 120 140
Bridge Output Full Wave Rectified
Current Average (A)
Ambient Temperature (°C)
Capacitive Load
< 500 µF
500 - 5000 µF
50 to 60 Hz
Resistive or
Inductive Load
P.C.B.
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
0.375"
(9.5 mm)
Figure 2. Derating Curves Output Rectified Current for
B250C1500G...B380C1500G
0
0.2
0.4
0.6
1.2
1.4
1.6
1.0
0.8
20 40 60 80 100 120 140
Capacitive
Load
0 - 10 µF
10 - 100 µF
> 100 µF
50 to 60 Hz
Resistive or
Inductive Load
Ambient Temperature (°C)
Bridge Output Full Wave Rectified
Current Average (A)
P.C.B.
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
0.375"
(9.5 mm)
B40C1500G thru B380C1500G
Vishay General Semiconductor
Document Number: 88501
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 4. Typical Forward Characteristics Per Diode
0
10
20
30
40
50
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
A
= 25 °C
Single Sine-Wave
0.01
0.1
1
10
100
0.4 0.6 0.81.0 1.2 1.4
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Figure 5. Typical Reverse Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
0.01
0.1
1
10
806040200 100
TJ = 100 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
1
10
100
0.1 101 100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.220 (5.6)
0.160 (4.1)
0.388 (9.86)
0.348(8.84)
1.0 (25.4) MIN.
0.060 (1.52)
0.020 (0.51)
0.032 (0.81)
0.028(0.71)
0.348(8.84)
0.308(7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Case Style WOG
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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