2SK3469-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg VISO *5 Ratings 500 14 56 30 14 188.2 20 5 2.16 70 +150 -55 to +150 2 Unit V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C kVrms < *1 L=1.76mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch=150C < < < < *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS= 500V *5 t=60sec, f=60Hz Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=500V VGS=0V Tch=25C VDS=400V VGS=0V Tch=125C VGS=30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 V CC=250V ID=12A VGS=10V L=1.76mH Tch=25C IF=12A VGS=0V Tch=25C IF=12A VGS=0V -di/dt=100A/s Tch=25C Min. Typ. 500 3.0 Max. 5.0 25 250 100 0.52 10 0.40 5.5 11 1200 1800 140 210 6.0 9.0 17 26 15 23 34 51 7 11 30 45 10 15 11 16.5 14 1.00 1.50 0.7 4.5 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.79 58.0 Units C/W C/W 1 2SK3469-01MR FUJI POWER MOSFET Characteristics Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V Allowable Power Dissipation PD=f(Tc) 80 500 450 70 400 IAS=6A 60 350 300 EAS [mJ] PD [W] 50 40 30 IAS=9A 250 200 150 IAS=14A 20 100 10 50 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [C] Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 30 20V 28 10V 8V 26 24 10 22 7.5V 20 ID[A] ID [A] 18 16 14 1 7.0V 12 10 8 VGS=6.5V 6 4 0.1 2 0 0 2 4 6 0 8 10 12 14 16 18 20 22 24 26 28 30 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 100 1.4 7.0V VGS=6.5V 7.5V 1.2 1.0 gfs [S] RDS(on) [ ] 10 8V 10V 20V 0.8 0.6 1 0.4 0.2 0.1 0.0 0.1 1 10 0 5 10 15 20 25 30 ID [A] ID [A] http://store.iiic.cc/ 2 2SK3469-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 1.4 7.0 1.3 6.5 1.2 6.0 1.1 5.5 1.0 5.0 VGS(th) [V] RDS(on) [ ] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 0.9 0.8 max. 0.7 0.6 max. 4.5 4.0 3.5 min. 3.0 typ. 0.5 2.5 0.4 2.0 0.3 1.5 0.2 1.0 0.1 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 Tch [C] 25 50 75 100 125 150 Tch [C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25C 24 10n 22 20 Vcc= 120V 18 Ciss 1n 300V 16 480V C [F] VGS [V] 14 12 10 100p Coss 8 6 10p Crss 4 2 0 1p 0 10 20 30 40 50 60 70 80 10 -1 10 0 10 Qg [nC] 1 10 2 10 3 VDS [V] Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode t=f(ID):Vcc=300V, VGS=10V, RG=10 IF=f(VSD):80s Pulse test,Tch=25C 100 10 2 tr td(off) t [ns] IF [A] 10 td(on) 10 1 10 0 tf 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] 10 0 10 1 ID [A] http://store.iiic.cc/ 3 Zth(ch-c) [C/W] 2SK3469-01MR 10 1 10 0 10 -1 10 -2 10 -3 FUJI POWER MOSFET Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Avalanche Current I AV [A] t [sec] 10 2 10 1 10 0 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=50V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4