2SK2874-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings T-pack (S) T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 6 24 35 6 259.1 50 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=13.2mH, Vcc=50V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=3A VGS=10V Min. 500 3.5 Tch=25C Tch=125C ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V 2 RGS=10 L=13.2 mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. 4.0 10 0.2 10 1.25 4 540 100 45 13 30 40 25 Max. 4.5 500 1.0 100 1.5 810 150 70 20 45 60 40 6 1.0 450 3.2 1.5 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 2.50 125 C/W C/W 1 2SK2874-01L,S FUJI POWER MOSFET Characteristics Safe operating area Power Dissipation PD=f(Tc) 60 ID=f(VDS):D=0.01,Tc=25C 10 2 50 10 1 t=1s 10 s DC 100s ID [A] PD [W] 40 30 10 0 1ms 10ms 20 10 100ms t -1 D= 10 t T T 0 0 50 100 10 150 -2 10 0 10 1 10 o Tc [ C] 2 10 3 VDS [V] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 15 10 VGS=20V 10V 8V 7V 10 nd e mm 6.5V 5 de 0 10 -1 10 -2 . n sig ew n for ID [A] ID [A] 10 1 6V o c e r 5.5V ot 0 0 5 10 N 15 20 5V 25 30 35 0 1 2 3 4 8 9 10 Typical drain-source on-state resistance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 10 VGS= 5V 5.5V 6V 6.5V 7V 8 RDS(on) [ ] 1 0 6 4 8V 10V 20V 2 10 7 Typical forward transconductance gfs [s] 10 6 VGS [V] VDS [V] 10 5 0 -1 10 -1 10 0 10 1 0 5 10 15 ID [A] ID [A] http://store.iiic.cc/ 2 2SK2874-01L,S FUJI POWER MOSFET Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS Drain-source on-state resistance RDS(on)=f(Tch):ID=3A,VGS=10V 5 6.0 5.0 4 max. 3 VGS(th) [V] RDS(on) [ ] 4.0 max. 2 typ. min. 3.0 2.0 typ. 1 1.0 0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic Typical capacitances C=f(VDS):VGS=0V,f=1MHz VGS=f(Qg):ID=6A,Tch=25C 10n 50 500 40 1n 400V 250V 100V 100 0 0 n r o f e m m 20 200 10 20 30 ot N 40 50 o c e r 60 70 80 10 n sig ew C [F] 300 30 VGS [V] Ciss nd 100p Crss 10p 0 10 90 Coss -2 10 -1 10 0 10 1 10 2 VDS [V] Qg [nC] Avalanche energy derating Forward characteristic of reverse of diode Eas=f(starting Tch):Vcc=50V,IAV=6A IF=f(VSD):80s Pulse test,VGS=0V 300 10 250 1 o Tch=25 C typ. 10 200 0 Eas [mJ] IF [A] VDS [V] Vcc=100V 250V . de Vcc=400V 400 150 100 10 -1 50 10 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 VSD [V] 50 100 150 o Starting Tch [ C] http://store.iiic.cc/ 3 2SK2874-01L,S 1 FUJI POWER MOSFET Transient thermal impedance Zthch=f(t) parameter:D=t/T 10 D=0.5 0 Zthch-c [K/W] 10 0.2 0.1 0.05 0.02 -1 10 t 0.01 -2 10 D= 0 t T T -3 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4