HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS(on) = 1000V = 36A = 0.24 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings V DSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Chip capability 36 A IDM TC = 25C, pulse width limited by TJM 144 A IAR TC = 25C 36 A EAR TC = 25C 64 mJ EAS TC = 25C 4 J 5 V/ns 700 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 PD TC = 25C TJ VISOL 50/60 Hz, RMS IISOL 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 25C TJ = 125C V 5.5 V 200 nA 100 2 A mA 0.24 miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features *International standard packages *miniBLOC, with Aluminium nitride isolation *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density DS98520D(04/03) IXFN 36N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 * ID25, pulse test 18 40 S 9200 pF 1200 pF Crss 300 pF td(on) 41 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 1 (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 55 ns 110 ns 30 ns 380 nC 65 nC 185 nC RthJC 0.18 0.05 RthCK Source-Drain Diode K/W M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr IF = IS, -di/dt = 100 A/s, VR = 100 VTJ = 25C TJ =125C TJ = 25C QRM IRM K/W miniBLOC, SOT-227 B 180 330 2 8 36 A 144 A 1.3 V ns ns C A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFN 36N100 50 80 VGS =10V 9V 8V 7V ID - Amperes 60 TJ = 125OC VGS =10V 9V 8V 7V 6V 40 ID - Amperes TJ = 25OC 40 6V 20 6V 30 20 5V 10 5V 0 0 0 4 8 12 16 0 20 5 10 15 20 25 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 2.2 VGS = 10V VGS = 10V 2.2 RDS(ON) - Normalized RDS(ON) - Normalized 2.0 TJ = 125OC 1.8 1.6 1.4 1.2 O TJ = 25 C 1.9 ID = 36A 1.6 ID =18A 1.3 1.0 1.0 25 0.8 0 10 20 30 40 50 50 75 RDS(on) normalized to 0.5 ID25 value vs. ID Figure 4. 40 50 32 40 ID - Amperes ID - Amperes 125 24 16 8 RDS(on) normalized to 0.5 ID25 value vs. TJ 30 TJ = 125oC 20 TJ = 25oC 10 0 -50 -25 0 25 50 75 100 125 150 T C - Degrees C Figure 5. Drain Current vs. Case Temperature (c) 2003 IXYS All rights reserved 150 T J - Degrees C ID - Amperes Figure 3. 100 0 3.5 4.0 4.5 5.0 5.5 6.0 VGS - Volts Figure 6. Admittance Curves 6.5 7.0 IXFN 36N100 12 30000 Ciss VDS = 500 V ID = 18 A IG = 10 mA 8 10000 Capacitance - pF VGS - Volts 10 6 4 f = 100kHz Coss 1000 Crss 2 100 0 0 100 200 300 400 0 500 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Figure 8. Capacitance Curves Figure 7. Gate Charge 100 144 100 0.1 ms ID - Amperes ID - Amperes 80 60 TJ = 125OC 40 TJ = 25OC 10 1 ms 10 ms O 1 TC = 25 C DC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 10 1.4 100 1000 VDS - Volts VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode R(th)JC - K/W 1.000 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXFN36N100 Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343