IRF130SMD
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 1/00
VGS Gate – Source Voltage
IDContinuous Drain Current @ Tcase = 25°C
IDContinuous Drain Current @ Tcase = 100°C
IDM Pulsed Drain Current
PDPower Dissipation @ Tcase = 25°C
Linear Derating Factor
TJ, Tstg Operating and Storage Temperature Range
R
q
JC Thermal Resistance Junction to Case
±20V
11A
7A
44A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
MECHANICAL DATA
Dimensions in mm (inches)
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0 .0 3 5 )
min.
4.14 (0.163)
3.84 (0.151)
10.69 (0.421)
10.39 (0.409)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
0.76
(0 .0 3 0 )
min.
!
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
SMD 1
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
Pad 1 – Gate Pad 2 – Drain Pad 3 – Source
VDSS 100V
ID(cont) 11A
RDS(on) 0.19
WW
WW
IRF130SMD
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 1/00
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS = 10V ID= 7A
VGS = 10V ID= 11A
VDS = VGS ID= 250
m
A
VDS
³
15V IDS = 7A
VGS = 0 VDS = 0.8BVDSS
TJ= 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V ID= 11A
VDS = 0.5BVDSS
ID= 11A
VDS = 0.5BVDSS
VDD = 50V
ID= 11A
RG= 7.5
W
IS= 11A TJ= 25°C
VGS = 0
IS= 11A TJ= 25°C
di/ dt
£
100A/
m
sV
DD
£
50V
ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.19
0.22
24
325
250
100
-100
650
240
44
12.8 28.5
1.0 6.3
3.8 16.6
30
75
40
45
11
43
1.5
300
3
8.7
8.7
V
V/°C
W
V
S(
W
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BVDSS
D
BVDSS
D
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
LD
LS
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from 6mm down drain lead pad to centre of die)
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS
(
W
)
