IRF130SMD MECHANICAL DATA Dimensions in mm (inches) 3 .6 0 (0 .1 4 2 ) M a x . ! VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 0 .8 9 (0 .0 3 5 ) m in . N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 100V 11A 0.19W FEATURES 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT SMD 1 Pad 1 - Gate * HERMETICALLY SEALED Pad 2 - Drain Pad 3 - Source * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS Gate - Source Voltage 20V ID Continuous Drain Current @ Tcase = 25C 11A ID Continuous Drain Current @ Tcase = 100C 7A IDM Pulsed Drain Current 44A PD Power Dissipation @ Tcase = 25C 45W Linear Derating Factor 0.36W/C TJ , Tstg Operating and Storage Temperature Range -55 to 150C RqJC Thermal Resistance Junction to Case 2.8C/W max. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 1/00 IRF130SMD ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 100 Reference to 25C V 0.1 ID = 1mA V / C Static Drain - Source On-State VGS = 10V ID = 7A 0.19 Resistance VGS = 10V ID = 11A 0.22 VDS = VGS ID = 250mA 2 VDS 15V IDS = 7A 3 VGS = 0 VGS(th) Gate Threshold Voltage V (W) S(W VDS = 0.8BVDSS 25 TJ = 125C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate - Source Leakage VGS = 20V 100 IGSS Reverse Gate - Source Leakage VGS = -20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 650 Coss Output Capacitance VDS = 25V 240 Crss Reverse Transfer Capacitance f = 1MHz 44 Qg Total Gate Charge Qgs Gate - Source Charge Qgd Gate - Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time IS SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current 11 ISM Pulse Source Current 43 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 11A Qrr Reverse Recovery Charge di / dt 100A/ms VDD 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance Semelab plc. ID = 11A nA pF 12.8 28.5 ID = 11A 1.0 6.3 VDS = 0.5BVDSS 3.8 16.6 VDS = 0.5BVDSS nC nC 30 VDD = 50V 75 ID = 11A ns 40 RG = 7.5W IS = 11A W 4 gfs VGS = 10V Unit 45 TJ = 25C VGS = 0 TJ = 25C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk A 1.5 V 300 ns 3 mC nH Prelim. 1/00