TC7WH32FU/FK
2003-02-18
1
TOSHI BA CMO S Dig ita l Int egrat ed Circ uit Silicon Monolit h ic
TC7WH32FU,TC7WH32FK
Dual 2-Input OR Gate
The TC7WH32 is an advanced high speed CMOS 2-Input OR
Gate fabricated with silicon gate CMOS technology. It achieves
the high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining the CMOS low power dissipation. The
internal circuit is composed of 4 stages including buffer output,
which provide high noise immunity and stable output. An input
protection circuit ensures that 0 to 7 V can be applied to the input
pins without regard to the supply voltage. This device can be
used to interface 5 V to 3 V systems and two supply systems such
as battery back up. This circuit prevents device destruction due
to mismatched supply and input voltages.
Features
· High speed: tpd = 3.8 ns (typ.) at VCC = 5 V
· Low power dissipation: ICC = 2 µA (max) at Ta = 25°C
· High noise immunity: VNIH = VNIL = 28% VCC (min)
· Power down protection is provided on all inputs.
· Balanced propagation delays: tpLH ~
-tpHL
· Wide operating voltage range: VCC (opr) = 2~5.5 V
Marking
SM8 US8
Pin Assignment (top view)
TC7WH32FU
TC7WH32FK
Weight
SSOP8-P-0.65: 0.02 g (typ.)
SSOP8-P-0.50A: 0.01 g (typ.)
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Logic Diagram Truth Table
A B Y
H H H
L H H
H L H
L L L
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Supply volt age range VCC -0.5~7.0 V
DC input volt age VIN -0.5~7.0 V
DC output voltage VOUT -0.5~VCC + 0.5 V
Input diode current IIK -20 mA
Output diode current IOK ±20 mA
DC output current IOUT ±25 mA
DC VCC/ground current ICC ±50 mA
300 (SM8)
Power dissipation PD 200 (US8) mW
Storage temperature Tstg -65~150 °C
Lead temperature (10 s) TL 260 °C
Recommended Operating Conditions
Characteristics Symbol Rating Unit
Supply volt age VCC 2.0~5.5 V
Input volt age VIN 0~5.5 V
Output voltage VOUT 0~VCC V
Operating temperature Topr -40~85 °C
0~100 (VCC = 3.3 ± 0.3 V)
Input rise and fall time dt/dv 0~20 (VCC = 5 ± 0.5 V) ns/V
TC7WH32FU/FK
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Electrical Characteristics
DC Characteristics
Ta = 25°C Ta = -40~85°C
Characteristics Symbol Test Condition VCC
(V) Min Typ. Max Min Max Unit
2.0 1.50 ¾ ¾ 1.50 ¾
High-level input voltage VIH ¾ 3.0~
5.5 VCC
´ 0.7 ¾ ¾ VCC
´ 0.7 ¾ V
2.0 ¾ ¾ 0.50 ¾ 0.50
Low-level input voltage VIL ¾ 3.0~
5.5 ¾ ¾ VCC
´ 0.3 ¾ VCC
´ 0.3 V
2.0 1.9 2.0 ¾ 1.9 ¾
3.0 2.9 3.0 ¾ 2.9 ¾
IOH = -50 mA
4.5 4.4 4.5 ¾ 4.4 ¾
IOH = -4 mA 3.0 2.58 ¾ ¾ 2.48 ¾
High-level output voltage VOH VIN = VIH or VIL
IOH = -8 mA 4.5 3.94 ¾ ¾ 3.80 ¾
V
2.0 ¾ 0.0 0.1 ¾ 0.1
3.0 ¾ 0.0 0.1 ¾ 0.1
IOL = 50 mA
4.5 ¾ 0.0 0.1 ¾ 0.1
IOL = 4 mA 3.0 ¾ ¾ 0.36 ¾ 0.44
Low-level output vol tage VOL VIN = VIL
IOL = 8 mA 4.5 ¾ ¾ 0.36 ¾ 0.44
V
Input leakage current IIN VIN = 5. 5 V or GND 0~
5.5 ¾ ¾ ±0.1 ¾ ±1.0 mA
Quiescent supply current ICC VIN = VCC or GND 5.5 ¾ ¾ 2.0 ¾ 20.0 mA
AC Characteristics (input: tr =
==
= tf =
==
= 3 ns)
Test Condition Ta = 25°C Ta = -40~85°C
Characteristics Symbol V
CC (V) CL (pF) Min Typ. Max Min Max Unit
15 ¾ 5.5 7.9 1.0 9.5
3.3 ± 0.3 50 ¾ 8.0 11.4 1.0 13.0
15 ¾ 3.8 5.5 1.0 6.5
Propagation delay time tpLH
tpHL ¾
5.0 ± 0.5 50 ¾ 5.3 7.5 1.0 8.5
ns
Input capacitance CIN ¾ ¾ 4 10 ¾ 10 pF
Power dissipation capac itance CPD (Note) ¾ 14 ¾ ¾ ¾ pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPDVCCfIN + ICC/2
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Noise Characteristics (Ta =
==
= 25°C, input: tr =
==
= tf =
==
= 3 ns)
Characteristics Symbol Test Condition VCC (V) Typ. Limit Unit
Quiet output maximum dynamic VOL V
OLP C
L = 50 pF 5.0 0.3 0.8 V
Quiet output minim um dynamic VOL V
OLV C
L = 50 pF 5.0 -0.3 -0.8 V
Minimum high level dynam ic i nput
voltage VIHD C
L = 50 pF 5.0 ¾ 3.5 V
Maximum low level dynamic i nput
voltage VILD C
L = 50 pF 5.0 ¾ 1.5 V
Input Equivalent Circuit
TC7WH32FU/FK
2003-02-18
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Package Dimensions
Weight: 0.02 g (typ.)
TC7WH32FU/FK
2003-02-18
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Package Dimensions
Weight: 0.01 g (typ.)
TC7WH32FU/FK
2003-02-18
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000707EB
A
RESTRICTIONS O N PRODUCT USE