FPD1050SOT89 FPD1050SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features (at 2.0GHz) The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25mx1050m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels. Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 24dBm Output Power (P1dB) 16.5dB Small-Signal Gain (SSG) 0.45dB Minimum Noise Figure 37dBm OIP3 5V, 80mA Bias FPD1050SOT89E: RoHScompliant (Directive 2002/95/EC) Applications SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Specification 0.9GHz 1.85GHz 2.0GHz RF Parameter Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers High Intercept-point LNAs WLL, WLAN, and Other Types of Wireless Infrastructure Systems. Unit 2.6GHz Condition P1dB Gain Compression 23 24.5 24 25 dBm VDS =5V, IDS =80mA Small-Signal Gain (SSG) 22 17.5 16.5 16 dB VDS =5V, IDS =80mA PAE Maximum Stable Gain (S21/S12) 50 25 50 21.5 50 21 50 19.5 % VDS =5V, IDS =80mA, POUT =P1dB VDS =5V, IDS =80mA 0.25 33.5 0.4 36 0.45 37 0.5 36 dB dBm Minimum Noise Figure (NFmin) OIP3 DC Parameter Min. Saturated Drain-Source Current (IDSS) Maximum Drain-Source Current (IMAX) 260 Transconductance (GM) Thermal Resistivity (JC) * 320 520 Max. 385 270 Gate-Source Leakage Current (IGSO) Pinch-Off Voltage (VP) Gate-Source Breakdown Voltage (VBDGS) Gate-Drain Breakdown Voltage (VBDGD) Specification Typ. 15 |1.3| VDS =5V, IDS =80mA VDS =5V, IDS =80mA, POUT =10dBm per tone Unit mA mA Condition VDS =1.3V, VGS =0V VDS =1.3V, VGS +1V ms VDS =1.3V, VGS =0V A V VGS =-5V VDS =1.3V, IDS =1.05mA |0.7| 1 |1.0| |12| |16| V IGS =1.05mA |12| |16| V IGD =1.05mA 76 C/W VDS >3V *Note: TAMBIENT =22C, RF specifications measured at f=1850GHz using CW signal (except as noted). RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. Rev A1 DS090612 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 FPD1050SOT89 Absolute Maximum Ratings1 Parameter Rating Caution! ESD sensitive device. Unit Drain-Source Voltage (VDS) (-3V2.5:1. 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 4Total Power Dissipation (P TOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. Total Power Dissipation to be de-rated as follows above 22C: PTOT =2.0-(0.013W/C)xTPACK, where TPACK =source tab lead temperature above 22C. (Coefficient of de-rating formula is Thermal Conductivity.) Exampe: For a 65C carrier temperature: PTOT =2.0W-(0.013x(65-22))=1.44W Biasing Guidelines Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is applied before drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. A class A/B bias of 25% to 33% of IDSS to acheive better OIP3 and noise figure performance is suggested. 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090612 FPD1050SOT89 Typical Frequency Response FPD1050SOT89 Associated Gain FPD 1050SOT89 N.F. min 25.00 1.60 5V, 80mA 5V, 160mA 23.00 1.40 N.F. min (dB) 19.00 17.00 15.00 13.00 1.20 1.00 0.80 0.60 0.40 11.00 5V, 80mA 5V, 160mA 0.20 Frequency (GHz) 6.000 5.400 4.800 4.200 3.600 3.000 2.400 0.600 1.800 0.00 6.000 5.40 0 4.800 4.200 3 .600 3.000 2.400 1.800 1.200 0.60 0 9.00 1.200 Gain (dB) 21.00 Frequency (GHz) Note: Typical gain and noise figure variation against frequency is shown above. The devices were biased nominally at VDS =5V, IDS =80mA. The test devices were tuned for minimum noise figure on a noise parameter measurement system using electronic tuners. Typical RF Performance @ 1.85GHz Drain Ef ficiency and PAE VDS = 5V IDS = 80mA at f = 1.85GHz Powe r Tr ansfer Characterist ic VDS = 5V IDS = 80mA at f = 1.85G Hz 5.00 22.0 4.00 50.0% 50.0% 20.0 3.00 18.0 2.00 16.0 1.00 14.0 0.00 12.0 -3.0 -2.0 - 1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 PAE 40.0% 30.0% 30.0% 20.0% 20.0% 10.0% 10.0% 0.0% -1.00 - 4.0 Eff. 40.0% PAE (%) Outpu t Power (dBm ) Comp Point Gain Co mp re ssion (d B) Pout (dBm) 24.0 - 5.0 60.0% 6.00 0.0% -5.0 9.0 Dr ain Effi ci ency (%) 26.0 60.0% -4.0 -3.0 -2.0 -1.0 In pu t Power (dBm ) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 I nput Power (dBm) Typical Intermodu lation Performance VDS = 5V IDS = 80mA at f = 1.85GHz -32 14 -37 Output Power (dBm) Pout (dBm ) 3rds (dBc) 12 -42 10 -47 8 -52 6 -57 4 3r d Order IM Products (dBc) 16 -62 -12.5 -11.5 -10.5 -9.5 -8.5 -7.5 -6.5 -5.5 -4.5 - 3.5 -2.5 Input Power (dBm) Note: Typical power transfer characteristics, efficiency, and intermodulation performance is shown in the three plots. The data is taken with the device mounted on an evaluation board tuned at 1.85GHz for low noise and gain as shown in "Reference Design (1.85GHz)" on page 5. Rev A1 DS090612 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 FPD1050SOT89 Noise Parameters Biased at VDS =5V, IDS =160mA Frequency NFMIN Opt Biased at VDS =5V, IDS =80mA Rn/50 Frequency NFMIN Opt Rn/50 GHz dB Mag. Angle GHz dB Mag. Angle 0.600 0.21 0.649 24.3 0.131 0.600 0.18 0.671 17.4 0.099 0.900 0.28 0.558 42.8 0.102 0.900 0.24 0.577 32.2 0.082 1.200 0.35 0.476 60.8 0.080 1.200 0.29 0.493 47.1 0.068 1.500 0.42 0.405 78.6 0.064 1.500 0.35 0.418 62.2 0.056 1.800 0.49 0.343 96.0 0.052 1.800 0.40 0.353 77.4 0.048 2.100 0.55 0.292 113.1 0.046 2.100 0.46 0.298 92.7 0.043 2.400 0.62 0.251 129.9 0.043 2.400 0.51 0.252 108.1 0.039 2.700 0.69 0.221 146.3 0.044 2.700 0.57 0.216 123.7 0.038 3.000 0.76 0.200 162.4 0.048 3.000 0.63 0.190 139.4 0.039 3.300 0.83 0.190 178.2 0.054 3.300 0.68 0.173 155.2 0.041 3.600 0.89 0.189 -166.3 0.062 3.600 0.74 0.166 171.2 0.045 3.900 0.96 0.199 -151.2 0.072 3.900 0.79 0.168 -172.7 0.050 4.200 1.03 0.219 -136.5 0.086 4.200 0.85 0.180 -156.5 0.056 4.500 1.10 0.250 -122.0 0.106 4.500 0.90 0.202 -140.2 0.065 4.800 1.17 0.290 -107.9 0.136 4.800 0.96 0.233 -123.7 0.079 5.100 1.23 0.341 -94.1 0.179 5.100 1.02 0.274 -107.2 0.100 5.400 1.30 0.402 -80.7 0.241 5.400 1.07 0.324 -90.5 0.133 5.700 1.37 0.473 -67.6 0.329 5.700 1.13 0.384 -73.6 0.182 6.000 1.45 0.554 -54.8 0.446 6.000 1.18 0.454 -56.7 0.249 S-Parameters Biased at VDS =5V, IDS =80mA Frequency S11 S21 Angle S12 GHz Mag. 0.600 0.848 0.900 0.785 1.200 0.744 -130.0 10.987 1.500 0.718 -147.5 9.355 1.800 0.703 -162.7 8.111 71.5 S22 Mag. Angle Mag. Angle Mag. Angle -80.6 16.295 125.8 0.032 51.8 0.251 -80.8 -108.1 13.244 108.2 0.041 40.8 0.236 -106.2 94.1 0.047 32.9 0.227 -125.8 82.2 0.051 26.6 0.213 -140.7 0.055 21.2 0.199 -155.2 -169.7 2.100 0.693 -177.1 7.163 61.4 0.059 16.0 0.189 2.400 0.687 170.0 6.418 51.8 0.063 10.9 0.181 175.8 2.700 0.689 157.7 5.794 42.4 0.066 5.8 0.182 158.8 3.000 0.692 145.3 5.260 33.2 0.069 0.6 0.189 143.2 3.300 0.700 134.0 4.805 24.2 0.071 -4.6 0.208 128.1 3.600 0.712 123.3 4.384 15.3 0.073 -10.1 0.235 114.8 3.900 0.729 112.7 4.019 6.5 0.075 -15.6 0.265 104.5 4.200 0.747 103.5 3.687 -2.0 0.076 -20.9 0.298 94.6 4.500 0.768 94.6 3.380 -10.2 0.076 -26.2 0.329 87.1 4.800 0.788 86.3 3.111 -18.2 0.076 -31.4 0.360 79.8 73.3 5.100 0.806 78.6 2.871 -25.8 0.076 -36.1 0.385 5.400 0.822 71.3 2.652 -33.3 0.076 -40.9 0.409 67.6 5.700 0.833 64.2 2.463 -40.9 0.076 -45.7 0.427 61.1 6.000 0.844 57.7 2.294 -48.1 0.075 -50.5 0.446 55.6 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090612 FPD1050SOT89 Reference Design (1.85GHz) Parameter Gain P1dB Typical Unit 17.5 24.5 dB dBm OIP3 36 dBm NF S11 S22 VD 0.65 -12 -11 5 dB dB dB V VG -0.4 to -0.6 V ID 80 mA Note: OIP3 measured at POUT of 10dBm per tone. Measured Gain and Return Loss Evaluation Board Layout Vg Vd 33pF 0.01uF 33pF 0.01uF 20 Lg 33pF L1 + 1.0uF + Ld Q1 C2 33pF 0.63" L2 C1 1.45" Evaluation Board Schematic Material: 31mm thick FR4 with 1/2oz. Cu on both sides VG VD 0.1 F 1.0 F 0.1 F 0.01 F 20 27 nH L1 RF IN Rev A1 DS090612 Value Description LG LD L1 L2 C1 C2 27nH 27nH 1.8nH 3.3nH 1.0pF 2.2pF LL1608 Toko chip LL1608 Toko chip LL1608 Toko chip LL1608 Toko chip ATC 600S chip capacitor ATC 600S chip capacitor 33 pF 33 pF 27 nH RF OUT 33 pF 33 pF Component L2 C1 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 8 FPD1050SOT89 Reference Design (2.6GHz) Parameter Gain P1dB Typical Unit 16 25 dB dBm OIP3 36 dBm NF S11 S22 VD 0.6 -8 -14 5 dB dB dB V VG -0.4 to -0.6 V ID 80 mA Note: OIP3 measured at POUT of 12dBm per tone. Measured Gain and Return Loss Evaluation Board Layout Vg Vd 33pF 0.01u F 33pF 20 C1 C2 Lg Q1 0.01uF + 1.0uF + Ld C3 R1 33pF 0.63" L1 1.45" Evaluation Board Schematic Material: 30mm thick Rogers4003 with 1/2oz. Cu on both sides VG VD 0.1 F 1.0 F 33 pF 0.01 F 20 18 nH 33 pF 6 of 8 Description 18nH 18nH 3.9nH 3.9pF 0.5pF 1.2pF 0 LL1608 Toko chip inductor LL1608 Toko chip inductor LL1005 Toko chip inductor ATC 600S chip capacitor ATC 600S chip capacitor ATC 600S chip capacitor No component 0603 jumper RF OUT C3 C1 Value LG LD L1 C1 C2 C3 R1 33 pF 18 nH RF IN Component L1 C2 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090612 FPD1050SOT89 Part Identification Package Outline Dimensions in Millimeters Tape Dimensions and Part Orientation Tape and reel information on this part is in accordance with EIA-481-1 except where exceptions are identified. Device Footprint Units in inches Rev A1 DS090612 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 8 FPD1050SOT89 Preferred Assembly Instructions This package is compatible with both lead-free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260C. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD Rating These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. MSL Rating The device has an MSL rating of Level 2. To determine this rating, preconditioning was performed to the device per, the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, Moisture/Reflow sensitivity classification for non-hermetic solid state surface mount devices. Application Notes and Design Data Application Notes and design data including S-parameters, noise parameters, and device model are available on request and from www.rfmd.com. Reliability An MTTF of 4.2 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Information Description Ordering Code RoHS-Compliant Packaged pHEMT FPD1050SOT89E RoHS-Compliant Packaged pHEMT with enhanced passivation (recommended for new designs) FPD1050SOT89CE 0.9GHzEvaluation Board EB1050SOT89CE-BB 1.85GHzEvaluation Board EB1050SOT89CE-BA 2.0GHzEvaluation Board EB1050SOT89CE-BC 2.6GHzEvaluation Board EB1050SOT89CE-BG Delivery Quantity Ordering Code Reel of 1000 FPD1050SOT89CE Reel of 100 FPD1050SOT89CESR Bag of 25 FPD1050SOT89CESQ Bag of 5 FPD1050SOT89CESB Note: To order regular RoHS-compliant parts, replace the CE suffix with E. 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS090612