Features
1 of 8
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FPD1050SOT89
LOW-NOISE HIGH-LINEARITY PACKAGED
pHEMT
The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic
High Electron Mobility Transistor (pHEMT). It features a 0.25μmx1050μm Schottky
barrier gate, defined by high-resolution stepper-based photolithography. The
recessed and offset gate structure minimizes parasitics to optimize performance.
The epitaxial structure is designed for improved linearity over a range of bias condi-
tions and input power levels.
(at 2.0GHz)
24 dBm Output Power (P1dB)
16.5dB Small-Signal Gain
(SSG)
0.45dB Minimum Noise Fig-
ure
37 dBm OIP3
5V, 80mA Bias
FPD1050SOT89E: RoHS-
compliant (Directive
2002/95/EC)
Applications
Drivers or Output Stages in
PCS/Cellular Base Station
Transmitter Amplifiers
High Intercept-point LNAs
WLL, WLAN, and Other Types
of Wireless Infrastructure
Systems.
Rev A1 DS090612
9
Package Style: SOT89
FPD1050SOT8
9Low-Noise
High-Linearity
Packaged
pHEMT
RF Parameter Specification Unit Condition
0.9GHz 1.85GHz 2.0GHz 2.6GHz
P1dB Gain Compression 23 24.5 24 25 dBm VDS=5V, IDS =80mA
Small-Signal Gain (SSG) 22 17.5 16.5 16 dB VDS=5V, IDS=80mA
PAE 50 50 50 50 % VDS=5V, IDS=80mA, POUT=P1dB
Maximum Stable Gain (S21/S12) 25 21.5 21 19.5 VDS=5V, IDS=80mA
Minimum Noise Figure (NFmin) 0.25 0.4 0.45 0.5 dB VDS=5V, IDS =80mA
OIP333.5 36 37 36 dBm VDS=5V, IDS=80mA, POUT =10dBm per tone
DC Parameter Specification Unit Condition
Min. Typ. Max.
Saturated Drain-Source Current (IDSS) 260 320 385 mA VDS=1.3V, VGS=0V
Maximum Drain-Source Current
(IMAX)520 mA VDS=1.3V, VGS ≈+1 V
Transconductance (GM) 270 ms VDS =1.3V, VGS =0V
Gate-Source Leakage Current (IGSO) 1 15 μAV
GS=-5V
Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V VDS=1.3V, IDS=1.05mA
Gate-Source Breakdown Voltage
(VBDGS)|12| |16| V IGS=1.05mA
Gate-Drain Breakdown Voltage
(VBDGD)|12| |16| V IGD=1.05mA
Thermal Resistivity (θJC) * 76 °C/W VDS>3V
*Note: TAMBIENT=22°C, RF specifications measured at f=1850GHz using CW signal (except as noted).
2 of 8 Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD1050SOT89
Biasing Guidelines
Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger num-
ber of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is
applied before drain bias, otherwise the pHEMT may be induced to self-oscillate
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode
devices.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the
onset of compression is normal for this operating point. A class A/B bias of 25% to 33% of IDSS to acheive better OIP3 and
noise figure performance is suggested.
Absolute Maximum Ratings1
Parameter Rating Unit
Drain-Source Voltage (VDS)
(-3V<VGS<-0V)
8V
Gate-Source Voltage (VGS)
(0V<VDS<+8V)
-3 V
Drain-Source Current (IDS)
(For VDS<2V)
IDSS
Gate Current (IG) (Forward or reverse) 10 mA
RF Input Power (PIN)2
(Under any acceptable bias state)
260 mW
Channel Operating Temperature (TCH)
(Under any acceptable bias state)
175 °C
Storage Temperature (TSTG)
(Non-Operating Storage)
-40 to 150 °C
Total Power Dissipation (PTOT)3, 4, 5 2.0 W
Gain Compression
(Under any acceptable bias state) 5dB
Simultaneous Combination of Limits6
(2 or more max. limits)
Notes:
1TAMBIENT =22°C unless otherwise noted; exceeding any one of these absolute max-
imum ratings may cause permanent damage to the device.
2Max. RF input limit must be further limited if input VSWR>2.5:1.
3Users should avoid exceeding 80% of 2 or more Limits simultaneously.
4Total Power Dissipation (PTOT) defined as (PDC+PIN)–POUT, where PDC: DC Bias
Power, PIN: RF Input Power, POUT: RF Output Power.
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT =2.0 -(0.013W/°C)xTPACK, where TPACK =source tab lead temperature
above 22°C. (Coefficient of de-rating formula is Thermal Conductivity.)
Exampe: For a 65°C carrier temperature: PTOT =2.0W-(0.013x(65-22))=1.44W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 8Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD1050SOT89
Typical Frequency Response
Note: Typical gain and noise figure variation against frequency is shown above. The devices were biased nominally at VDS=5V,
IDS=80mA. The test devices were tuned for minimum noise figure on a noise parameter measurement system using electronic
tuners.
Typical RF Performance @ 1.85 GHz
Note: Typical power transfer characteristics, efficiency, and intermodulation performance is shown in the three plots. The data
is taken with the device mounted on an evaluation board tuned at 1.85GHz for low noise and gain as shown in “Reference
Design (1.85GHz)” on page 5.
F PD1050SOT89 As soci at ed Gain
9.00
11.00
13.00
15.00
17.00
19.00
21.00
23.00
25.00
0.600
1.200
1.800
2.400
3.000
3.600
4.200
4.800
5.400
6.000
Fre que nc y ( GHz)
Gain (dB)
5V, 80mA
5V, 160 mA
FPD1050SOT89 N.F. mi n
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
0.600
1.200
1.800
2.400
3.000
3.600
4.200
4.800
5.400
6.000
Freque ncy (GHz)
N. F. min (dB)
5V, 80mA
5V, 160mA
Dra in Effi ciency and PA E
VDS = 5V IDS = 80mA at f
= 1.85GHz
0.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
-5 .0 -4 .0 -3 .0 -2 .0 -1.0 0.0 1 .0 2 .0 3 .0 4 .0 5 .0 6 .0 7 .0 8 .0 9 .0
Input Power (dBm)
PAE (%)
0.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
Drain Ef fi cien c y ( %)
Eff. PAE
Typica l Intermodulation Performance
VDS = 5V IDS = 80mA at f = 1. 85G H z
4
6
8
10
12
14
16
-12.5 -11.5 -10.5 -9.5 -8.5 -7.5 -6.5 -5.5 -4.5 -3.5 -2.5
Input Po wer (dBm)
Output Power (dBm)
-62
-57
-52
-47
-42
-37
-32
3rd Or der IM Pr oducts (dBc )
P out (dB m) 3r ds (dBc)
Power Trans f er Charac t er istic
VDS = 5V IDS = 8 0mA at f = 1. 85GHz
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
-5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Input Pow er (dBm)
Outpu t Power (dBm)
-1.00
0.0 0
1.0 0
2.0 0
3.0 0
4.0 0
5.0 0
6.0 0
Gain Compression (dB)
Pout (dBm) Comp Point
4 of 8 Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD1050SOT89
Noise Parameters
S-Parameters
Biased at VDS=5V, IDS=80mA
Biased at VDS=5V, IDS =160mA Biased at VDS=5V, IDS =80mA
Frequency NFMIN Γ Opt Rn/50 Frequency NFMIN Γ Opt Rn/50
GHz dB Mag. Angle ΩGHz dB Mag. Angle Ω
0.600 0.21 0.649 24.3 0.131 0.600 0.18 0.671 17.4 0.099
0.900 0.28 0.558 42.8 0.102 0.900 0.24 0.577 32.2 0.082
1.200 0.35 0.476 60.8 0.080 1.200 0.29 0.493 47.1 0.068
1.500 0.42 0.405 78.6 0.064 1.500 0.35 0.418 62.2 0.056
1.800 0.49 0.343 96.0 0.052 1.800 0.40 0.353 77.4 0.048
2.100 0.55 0.292 113.1 0.046 2.100 0.46 0.298 92.7 0.043
2.400 0.62 0.251 129.9 0.043 2.400 0.51 0.252 108.1 0.039
2.700 0.69 0.221 146.3 0.044 2.700 0.57 0.216 123.7 0.038
3.000 0.76 0.200 162.4 0.048 3.000 0.63 0.190 139.4 0.039
3.300 0.83 0.190 178.2 0.054 3.300 0.68 0.173 155.2 0.041
3.600 0.89 0.189 -166.3 0.062 3.600 0.74 0.166 171.2 0.045
3.900 0.96 0.199 -151.2 0.072 3.900 0.79 0.168 -172.7 0.050
4.200 1.03 0.219 -136.5 0.086 4.200 0.85 0.180 -156.5 0.056
4.500 1.10 0.250 -122.0 0.106 4.500 0.90 0.202 -140.2 0.065
4.800 1.17 0.290 -107.9 0.136 4.800 0.96 0.233 -123.7 0.079
5.100 1.23 0.341 -94.1 0.179 5.100 1.02 0.274 -107.2 0.100
5.400 1.30 0.402 -80.7 0.241 5.400 1.07 0.324 -90.5 0.133
5.700 1.37 0.473 -67.6 0.329 5.700 1.13 0.384 -73.6 0.182
6.000 1.45 0.554 -54.8 0.446 6.000 1.18 0.454 -56.7 0.249
Frequency S11 S21 S12 S22
GHz Mag. Angle Mag. Angle Mag. Angle Mag. Angle
0.600 0.848 -80.6 16.295 125.8 0.032 51.8 0.251 -80.8
0.900 0.785 -108.1 13.244 108.2 0.041 40.8 0.236 -106.2
1.200 0.744 -130.0 10.987 94.1 0.047 32.9 0.227 -125.8
1.500 0.718 -147.5 9.355 82.2 0.051 26.6 0.213 -140.7
1.800 0.703 -162.7 8.111 71.5 0.055 21.2 0.199 -155.2
2.100 0.693 -177.1 7.163 61.4 0.059 16.0 0.189 -169.7
2.400 0.687 170.0 6.418 51.8 0.063 10.9 0.181 175.8
2.700 0.689 157.7 5.794 42.4 0.066 5.8 0.182 158.8
3.000 0.692 145.3 5.260 33.2 0.069 0.6 0.189 143.2
3.300 0.700 134.0 4.805 24.2 0.071 -4.6 0.208 128.1
3.600 0.712 123.3 4.384 15.3 0.073 -10.1 0.235 114.8
3.900 0.729 112.7 4.019 6.5 0.075 -15.6 0.265 104.5
4.200 0.747 103.5 3.687 -2.0 0.076 -20.9 0.298 94.6
4.500 0.768 94.6 3.380 -10.2 0.076 -26.2 0.329 87.1
4.800 0.788 86.3 3.111 -18.2 0.076 -31.4 0.360 79.8
5.100 0.806 78.6 2.871 -25.8 0.076 -36.1 0.385 73.3
5.400 0.822 71.3 2.652 -33.3 0.076 -40.9 0.409 67.6
5.700 0.833 64.2 2.463 -40.9 0.076 -45.7 0.427 61.1
6.000 0.844 57.7 2.294 -48.1 0.075 -50.5 0.446 55.6
5 of 8Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD1050SOT89
Reference Design (1.85GHz)
Note: OIP3 measured at POUT of
10dBm per tone.
Evaluation Board Layout
Evaluation Board Schematic
Material: 31mm thick FR4 with ½oz. Cu on both sides
Parameter Typical Unit
Gain 17.5 dB
P1dB 24.5 dBm
OIP336 dBm
NF 0.65 dB
S11 -12 dB
S22 -11 dB
VD5V
VG-0.4 to -0.6 V
ID80 mA
Component Value Description
LG 27nH LL1608 Toko chip
LD 27nH LL1608 Toko chip
L1 1.8nH LL1608 Toko chip
L2 3.3nH LL1608 Toko chip
C1 1.0pF ATC 600S chip capacitor
C2 2.2pF ATC 600S chip capacitor
Measured Gain and Return Loss
33pF
C1
L1
33pF
0.01uF 20Ω
Lg Q1 C2
33pF
L2
+
0.01uF 1.0uF
33pF
Ld
+
Vg Vd
0.63"
1.45"
6 of 8 Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD1050SOT89
Reference Design (2.6GHz)
Note: OIP3 measured at POUT of
12dBm per tone.
Evaluation Board Layout
Evaluation Board Schematic
Material: 30mm thick Rogers4003 with ½oz. Cu on both sides
Parameter Typical Unit
Gain 16 dB
P1dB 25 dBm
OIP336 dBm
NF 0.6 dB
S11 -8 dB
S22 -14 dB
VD5V
VG-0.4 to -0.6 V
ID80 mA
Component Value Description
LG 18nH LL1608 Toko chip inductor
LD 18nH LL1608 Toko chip inductor
L1 3.9nH LL1005 Toko chip inductor
C1 3.9pF ATC 600S chip capacitor
C2 0.5pF ATC 600S chip capacitor
C3 1.2pF ATC 600S chip capacitor
R1 0ΩNo component 0603 jumper
Measured Gain and Return Loss
33pF
C2 R1
C1
0.01uF 20Ω
Lg Q1 C3
33pF
L1
+
0.01uF 1.0uF
33pF
Ld
+
Vg Vd
0.63"
1.45"
7 of 8Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD1050SOT89
Part Identification
Package Outline
Dimensions in Millimeters
Tape Dimensions and Part Orientation
Tape and reel information on this part is in accordance with EIA-481-1 except where exceptions are identified.
Device Footprint
Units in inches
8 of 8 Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD1050SOT89
Preferred Assembly Instructions
This package is compatible with both lead-free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C.
The maximum package temperature should not exceed 260°C.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electro-
static Discharge (ESD) precautions should be observed at all stages of storage, handling,
assembly, and testing.
ESD Rating
These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22-
A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
MSL Rating
The device has an MSL rating of Level 2. To determine this rating, preconditioning was performed to the device per, the Pb-free
solder profile defined within IPC/JEDEC J-STD-020C, Moisture/Reflow sensitivity classification for non-hermetic solid state sur-
face mount devices.
Application Notes and Design Data
Application Notes and design data including S-parameters, noise parameters, and device model are available on request and
from www.rfmd.com.
Reliability
An MTTF of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device.
Disclaimers
This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Note: To order regular RoHS-compliant parts, replace the CE suffix with E.
Description Ordering Code
RoHS-Compliant Packaged pHEMT FPD1050SOT89E
RoHS-Compliant Packaged pHEMT with enhanced passivation (recommended for new designs) FPD1050SOT89CE
0.9GHzEvaluation Board EB1050SOT89CE-BB
1.85GHzEvaluation Board EB1050SOT89CE-BA
2.0GHzEvaluation Board EB1050SOT89CE-BC
2.6GHzEvaluation Board EB1050SOT89CE-BG
Delivery Quantity Ordering Code
Reel of 1000 FPD1050SOT89CE
Reel of 100 FPD1050SOT89CESR
Bag of 25 FPD1050SOT89CESQ
Bag of 5 FPD1050SOT89CESB