CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES FEATURES . In MiniMELF case especiaily for automated insertion The zener voltage are graded according to the intermational E24 standed. Smaller voltage tolerances and higher zener voltage on request MECHANICAL DATA . Case: Mini-MELF(SOD-80) glass case . weight: Approx. 0.05 gram ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 ) Symbols Value Units Ptot 500 mW Zener current see table "Characteristics" Power dissipation at TA=25 TJ 175 TSTG -55 to +175 Junction temperature Storage temperature range 1) 1)Valid provided that a distance of 8mm from case are kept at ambient temperature ELECTRCAL CHARACTERISTICS(TA=25 Symbols Thermal resistance junction to ambient R ) Min JA Typ Max 300 1) Units K/W 1) Valid provided that a distance at 8mm from case are kept at ambient temperature Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 8 CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES ZMM1 THRU ZMM200 SILICON PLANAR ZENER DIODES Zener Voltage range Type ZMM1 3) ZMM2.0 ZMM2.4 ZMM2.7 ZMM3.0 ZMM3.3 ZMM3.6 ZMM3.9 ZMM4.3 ZMM4.7 ZMM5.1 ZMM5.6 ZMM6.2 ZMM6.8 ZMM7.5 ZMM8.2 ZMM9.1 ZMM10 ZMM11 ZMM12 ZMM13 ZMM15 ZMM16 ZMM18 ZMM20 ZMM22 ZMM24 ZMM27 ZMM30 ZMM33 ZMM36 ZMM39 ZMM43 ZMM47 ZMM51 ZMM56 ZMM62 ZMM68 ZMM75 ZMM82 ZMM91 ZMM100 ZMM110 ZMM120 ZMM130 ZMM150 ZMM160 ZMM180 ZMM200 Vznom v 0.75 2.0 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 1) Dynamic resistance IZT 3) mA 5 2.5 1 1) Maximum reverse Leakage Current rZjt and rZjk at IZK V 0.7...0.8 1.9...2.1 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4.0...4.6 4.4...5.0 4.8...5.4 5.2...6.0 5.8...6.6 6.4...7.2 7.0...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79. 77...87 85...96 94...106 104...116 114...127. 124...141 138...156 153...171 168...191 188...212 IR and IR at VR mA <8 <50 <10 <4 <2 <2 <2 <85 <600 <75 <60 <35 <25 <10 <8 <7 <7 <10 <15 <20 <20 <26 <30 <40 <50 <55 <55 A -<100 <50 <1 <0.5 A -<200 <100 <50 <40 <50 1 <70 <70 <90 <110 <110 <170 <170 <2 <220 <80 <0.1 <90 <500 <110 <125 <135 <150 <200 <250 <300 <450 <450 <600 <800 <950 <1250 <1400 <1700 <2000 <600 <5 <700 <1000 <1500 <2000 0.25 <10 <5000 <5500 <6000 <6500 <7000 <8500 <10000 V -- 1 <20 <10 <550 <450 <200 <150 0.1 of zener voltage TKVZ 2) 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 %/K -0.26...-0.23 -0.09...-0.06 -0.09...-0.06 -0.09...-0.06 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.08...-0.05 -0.06...-0.03 -0.05...+0.05 -0.02...+0.02 -0.05...+0.05 0.03...0.06 0.03...0.07 0.03...0.08 0.03...0.09 0.03...0.1 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.03...0.11 0.04...0.12 0.05...0.12 1) Tested with pluse tp=20ms 2) Valid provided that electrodes are kept at amibent temperature 3) The ZMM1 is a silicon diode with operation in forward direction. Hence,the index of all parameters should be "F" instead of "Z", Connect the cathode to the negative pole. Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 8 CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED) BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 8 CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED) Admissible power dissipation Forward Characteristics versus ambient temperature Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 4 of 8 CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Pulse thermal resistance versus Dynamic resistance versus pulse duration Zener current Capacitance versus Zener Dynamic resistance versus voltage Zener current Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 5 of 8 CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Dynamic resistance versus Thermal differential resistance Zener current versus Zener voltage Dynamic resistance versus Temperature dependence of Zener voltage Zener voltage versus voltage Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 6 of 8 CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Temperature dependence of Thermal differential resistance Zener voltage versus voltage versus Zener voltage Dynamic resistance versus Temperature dependence of Zener voltage Zener voltage versus voltage Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 7 of 8 CE ZMM1 THRU ZMM200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES ZMM1...ZMM200 SILICON PLANER ZENER DIODES Temperature dependence of Zener voltage versus voltage Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 8 of 8