IRF634 IRF634FP N-channel 250V - 0.38 - 8A TO-220 /TO-220FP Mesh OverlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF634 250V <0.45 8A IRF634FP 250V <0.45 8A 3 Extremely High dv/dt Capability 100% Avalanche Tested 1 3 2 1 TO-220 TO-220FP Description Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications. Applications ) s ( ct Switching application c u d e t le 2 ) s t( o r P Internal schematic diagram o s b O - u d o r P e t e l o Order codes s b O Part number Marking Package Packaging IRF634 IRF634 TO-220 Tube IRF634FP IRF634FP TO-220FP Tube June 2006 Rev 2 1/14 www.st.com 18 Contents IRF634 - IRF634FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/14 o s b O - o r P ) s t( IRF634 - IRF634FP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value IRF634 VDS VDGR VGS IDM 250 V Drain-gate voltage (RGS = 20 k) 250 V Gate- source voltage 20 V 8 8(1) A 5 5(1) A Drain current (pulsed) 32 32(1) A Total dissipation at TC = 25C 80 30 0.64 0.24 Drain current (continuos) at TC = 100C ID (2) PTOT Derating factor dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (DC) Tstg Storage temperature Tj - Max. operating junction temperature e t le o s b O - 2. Pulse width limited by safe operating area ISD 8A, di/dt 300 A/ms, VDD V(BR)DSS, Tj Tjmax Table 2. Thermal data uc (t s) Rthj-case Thermal resistance junction-case max Rthj-amb od Thermal resistance junction-ambient max r P e Tl t e l o Table 3. O bs Maximum lead temperature for soldering purpose uc 5 1. Limited only by maximum temperature allowed 3. IRF634FP Drain-source voltage (VGS = 0) Drain current (continuos) at TC = 25C ID Unit Pr od ) s t( 2000 W W/C V/ns V -65 to 150 C 150 C TO-220 TO-220FP 1.56 4.11 C/W 62.5 C/W 300 C Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 8 A EAS Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50 V) 300 mJ 3/14 Electrical characteristics 2 IRF634 - IRF634FP Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Drain-source Breakdown Voltage ID = 250 A, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125 C IGSS Gate-body leakage current (VDS = 0) VGS = 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250A RDS(on) Static drain-source on resistance VGS = 10V, ID = 4 A V(BR)DSS Table 5. Dynamic Symbol Parameter gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance td(on) tr td(Voff) tf Turn-on delay time Rise time Turn-off- delay time Fall time Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge o r P e t e l o c u d (t s) Test conditions 4/14 Typ. Max. 250 Unit V 2 1 10 A A 100 nA ) s t( 3 4 V 0.38 0.45 Max. Unit c u d o r P Min. Typ. 7 8 S VDS = 25V, f = 1MHz, VGS = 0 770 118 48 pF pF VDD = 125V, ID = 4A RG = 4.7 VGS = 10V 13 18 51 16 ns ns ns ns VDD = 200V, ID = 8A, VGS = 10V 37 5.2 14.8 e t le VDS > ID(on) x RDS(on)max, ID = 4A o s b O - 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. s b O Min. 51.8 nC nC nC IRF634 - IRF634FP Table 6. Electrical characteristics Source drain diode Symbol Parameter ISDM (1) Source-drain current Source-drain Current (pulsed VSD (2) Forward on voltage ISD trr Test conditions Reverse recovery charge IRRM Reverse recovery current Typ. ISD = 8 A, VGS = 0 Reverse recovery time Qrr Min. ISD = 8A, di/dt = 100A/s VDD = 30V, Tj = 150C Max. Unit 8 32 A A 1.7 V 198 ns 1.1 nC 11.3 A 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 5/14 Electrical characteristics IRF634 - IRF634FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ DPAK/ DPAK Figure 3. Figure 2. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220/ DPAK/ DPAK Thermal impedance for TO-220FP c u d e t le Figure 5. Output characterisics r P e t e l o s b O 6/14 u d o ) s ( ct o r P o s b O Figure 6. ) s t( Transfer characteristics IRF634 - IRF634FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations c u d e t le ) s ( ct o r P o s b O - Figure 11. Normalized gate threshold voltage vs temperature u d o ) s t( Figure 12. Normalized on resistance vs temperature r P e t e l o s b O 7/14 Electrical characteristics IRF634 - IRF634FP Figure 13. Source-drain diode forward characteristics c u d e t le ) s ( ct u d o r P e t e l o s b O 8/14 o s b O - o r P ) s t( IRF634 - IRF634FP 3 Test circuit Test circuit Figure 14. Unclamped Inductive load test circuit Figure 15. Unclamped inductive waveform c u d Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit e t le ) s ( ct ) s t( o r P o s b O - u d o r P e Figure 18. Test circuit for inductive load switching and diode recovery times t e l o s b O 9/14 Package mechanical data 4 IRF634 - IRF634FP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct u d o r P e t e l o s b O 10/14 o s b O - o r P ) s t( IRF634 - IRF634FP Package mechanical data TO-220 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 ) s t( H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 L20 L30 d o r 0.645 28.90 1.137 oP 3.75 3.85 Q 2.65 2.95 ) s ( ct 0.147 P e let 0.104 uc 0.154 16.40 0.151 0.116 o s b O - u d o r P e t e l o s b O 11/14 Package mechanical data IRF634 - IRF634FP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 16 0.630 L3 28.6 30.6 1.126 L4 9.8 10.6 .0385 2.9 3.6 L6 15.9 16.4 L7 9 9.3 O 3 3.2 1.204 0.114 r P e t le 0.626 0.354 od 0.141 0.645 0.366 0.118 o s b O - 0.126 s b O 12/14 G G1 F F2 t e l o L7 H o r P e du L3 L6 F1 B ) s ( ct L2 L5 ) s t( 0.417 D A L5 uc E L2 1 2 3 L4 IRF634 - IRF634FP 5 Revision history Revision history Table 7. Document revision history Date Revision Changes 21-Jun-2004 1 Preliminary version 28-Jun-2006 2 New template, no content change c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 13/14 IRF634 - IRF634FP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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