June 2006 Rev 2 1/14
18
IRF634
IRF634FP
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP
Mesh Overlay™ Power MOSFET
General features
■Extremely High dv/dt Capability
■100% Avalanche Tested
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performance. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, makes it
suitable in coverters for lighting applications.
Applications
■Switching application
Internal schematic diagram
Type VDSS RDS(on) ID
IRF634 250V <0.45Ω8 A
IRF634FP 250V <0.45Ω8 A
123
12
3
TO-220 TO-220FP
www.st.com
Order codes
Part number Marking Package Packaging
IRF634 IRF634 TO-220 Tube
IRF634FP IRF634FP TO-220FP Tube
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Contents IRF634 - IRF634FP
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
IRF634 IRF634FP
VDS Drain-source voltage (VGS = 0) 250 V
VDGR Drain-gate voltage (RGS = 20 kΩ)250V
VGS Gate- source voltage ± 20 V
IDDrain current (continuos) at TC = 25°C 8 8(1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuos) at TC = 100°C 5 5(1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 32 32(1) A
PTOT Total dissipation at TC = 25°C 80 30 W
Derating factor 0.64 0.24 W/°C
dv/dt (3)
3. ISD ≤ 8A, di/dt ≤ 300 A/ms, VDD ≤ V(BR)DSS, Tj ≤ Tjmax
Peak diode recovery voltage slope 5 V/ns
VISO Insulation withstand voltage (DC) - 2000 V
Tstg Storage temperature –65 to 150 °C
TjMax. operating junction temperature 150 °C
Table 2. Thermal data
TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max 1.56 4.11 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 8A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V) 300 mJ
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage ID = 250 µA, VGS = 0 250 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ±20V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on)
Static drain-source on
resistance VGS = 10V, ID = 4 A 0.38 0.45 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS > ID(on) x RDS(on)max,
ID=4A 78 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
770
118
48
pF
pF
td(on)
tr
td(Voff)
tf
Turn-on delay time
Rise time
Turn-off- delay time
Fall time
VDD = 125V, ID = 4A
RG=4.7Ω VGS = 10V
13
18
51
16
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 200V, ID = 8A,
VGS = 10V
37
5.2
14.8
51.8 nC
nC
nC
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Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Source-drain current
Source-drain Current
(pulsed
8
32
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage ISD = 8 A, VGS = 0 1.7 V
trr Reverse recovery time
ISD = 8A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
198 ns
Qrr Reverse recovery charge 1.1 nC
IRRM Reverse recovery current 11.3 A
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220/
DPAK/ D²PAK
Figure 2. Thermal impedance for TO-220/
DPAK/ D²PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
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Figure 7. Transconductance Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Normalized on resistance vs
temperature
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Figure 13. Source-drain diode forward
characteristics
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3 Test circuit
Figure 14. Unclamped Inductive load test
circuit
Figure 15. Unclamped inductive waveform
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
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Package mechanical data IRF634 - IRF634FP
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
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Package mechanical data IRF634 - IRF634FP
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L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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5 Revision history
Table 7. Document revision history
Date Revision Changes
21-Jun-2004 1Preliminary version
28-Jun-2006 2New template, no content change
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