DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 FEATURES QUICK REFERENCE DATA * High current SYMBOL * Three current gain selections VCEO collector-emitter voltage - -20 V IC collector current (DC) - -1 A APPLICATIONS ICM peak collector current - -2 A * Linear voltage regulators (LDO) hFE DC current gain * 1.4 W total power dissipation. PARAMETER MIN. MAX. UNIT * High side switches BCP69 85 375 * Supply line switches BCP69-16 100 250 * MOSFET drivers BCP69-16/IN 140 230 * Audio pre-amplifiers. BCP69-25 160 375 DESCRIPTION PNP medium power transistor (see "Simplified outline, symbol and pinning") for package details. PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PHILIPS EIAJ BCP69 SOT223 SC-73 BCP69 BCP69-16 SOT223 SC-73 BCP69/16 BCP69-16/IN SOT223 SC-73 69-16N BCP69-25 SOT223 SC-73 BCP69/25 SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN BCP69 4 handbook, halfpage 2, 4 1 3 1 Top view 2003 Nov 25 2 3 MAM288 2 DESCRIPTION 1 base 2 collector 3 emitter 4 collector Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 RELATED PRODUCTS TYPE NUMBER DESCRIPTION FEATURE BCP68 NPN medium power transistor NPN complement BC869 PNP medium power transistor SOT89, -20 V BC369 PNP medium power transistor SOT54, -20 V ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BCP69 - BCP69-16 DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 BCP69-16/IN BCP69-25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -32 V VCEO collector-emitter voltage open base - -20 V VEBO emitter-base voltage open collector - -5 V IC collector current (DC) - -1 A ICM peak collector current - -2 A IBM peak base current Ptot total power dissipation - -200 mA Tamb 25 C; notes 1 and 2 - 0.625 W Tamb 25 C; notes 1 and 3 - 1 W Tamb 25 C; notes 1 and 4 - 1.4 W Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Notes 1. See SOT223 (SC-73) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad. 2003 Nov 25 3 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 MLE311 1.6 handbook, halfpage (1) Ptot (W) 1.2 (2) 0.8 (3) 0.4 0 -65 -5 55 175 115 Tamb (C) (1) 6 cm2 collector mounting pad. (2) 1 cm2 collector mounting pad. (3) Standard PCB footprint. Fig.1 Power derating curve. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) PARAMETER thermal resistance from junction to ambient thermal resistance from junction to solder point CONDITIONS VALUE UNIT Tamb 25 C; notes 1 and 2 200 K/W Tamb 25 C; notes 1 and 3 125 K/W Tamb 25 C; notes 1 and 4 89 K/W Tamb 25 C 15 K/W Notes 1. See SOT223 (SC-73) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad. 2003 Nov 25 4 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 7.00 3.85 3.60 3.50 handbook, full pagewidth ,,,, ,,,, 0.30 1.20 (4x) solder lands solder resist 4 occupied area solder paste 7.40 3.90 4.80 7.65 ,, ,, ,, ,,,,,, 1 2 3 1.20 (3x) 1.30 (3x) 5.90 6.15 MSA443 Dimensions in mm. Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering). 2003 Nov 25 5 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 32 mm handbook, halfpage 30 mm 20 mm 40 mm 1.3 mm 2.6 mm 0.5 mm 5 mm 3.96 mm 1.6 mm MDB845 Dimensions in mm. Fig.3 6 cm2 collector mounting pad. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = -25 V; IE = 0 - - -100 nA VCB = -25 V; IE = 0; Tj = 150 C - - -10 A - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 hFE DC current gain BCP69 VCE = -10 V; IC = -5 mA 50 VCE = -1 V; IC = -500 mA 85 - 375 VCE = -1 V; IC = -1 A 60 - - 100 - 250 BCP69-16 VCE = -1 V; IC = -500 mA BCP69-16/IN VCE = -1 V; IC = -500 mA 140 230 BCP69-25 VCE = -1 V; IC = -500 mA VCEsat collector-emitter saturation voltage IC = -1 A; IB = -100 mA VBE base-emitter voltage 160 - -500 mV VCE = -10 V; IC = -5 mA - - -700 mV VCE = -1 V; IC = -1 A - - -1 V - 28 - pF 140 - MHz Cc collector capacitance VCB = -10 V; IE = ie = 0; f = 1 MHz fT transition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz 40 2003 Nov 25 375 - 6 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 MLE303 -2.4 IC (A) -2.0 mle304 -1000 handbook, halfpage VBE (mV) -800 (1) (2) (3) -1.6 (4) (5) -600 (6) -1.2 (7) -400 (8) -0.8 (9) -0.4 -200 (10) 0 -1 0 -2 -3 -4 0 -10-1 -5 VCE (V) BCP69-16. BCP69-16. Tamb = 25 C. VCE = -1 V. (1) (2) (3) (4) (5) IB = -18.0 mA. IB = -16.2 mA. IB = -14.4 mA. IB = -12.6 mA. IB = -10.8 mA. Fig.4 -10 -102 -103 -104 IC (mA) (6) IB = -9.0 mA. (7) IB = -7.2 mA. (8) IB = -5.4 mA. (9) IB = -3.6 mA. (10) IB = -1.8 mA. Collector current as a function of collector-emitter voltage; typical values. 2003 Nov 25 -1 Fig.5 7 Base-emitter voltage as a function of collector current; typical values. Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 MLE305 103 halfpage handbook, MLE306 -103 handbook, halfpage VCEsat hFE (mV) -102 -10 102 -10-1 -1 -10 -102 -1 -10-1 -103 -104 IC (mA) BCP69-16. BCP69-16. VCE = -1 V. IC/IB = 10. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. 2003 Nov 25 8 -1 -10 -102 -103 -104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 MLE307 -2.4 IC (A) -2.0 mle304 -1000 handbook, halfpage VBE (mV) -800 (1) (2) (3) (4) -1.6 (5) -600 (6) -1.2 (7) -400 (8) -0.8 (9) -0.4 -200 (10) 0 -1 0 -2 -3 -4 0 -10-1 -5 VCE (V) BCP69-25. BCP69-25. Tamb = 25 C. VCE = -1 V. (1) IB = -12 mA. (2) IB = -10.8 mA. (3) IB = -9.6 mA. (4) IB = -8.4 mA. (5) IB = -7.2 mA. Fig.8 -10 -102 -103 -104 IC (mA) (6) IB = -6.0 mA. (7) IB = -4.8 mA. (8) IB = -3.6 mA. (9) IB = -2.4 mA. (10) IB = -1.2 mA. Collector current as a function of collector-emitter voltage; typical values. 2003 Nov 25 -1 Fig.9 9 Base-emitter voltage as a function of collector current; typical values. Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 MLE309 103 halfpage handbook, MLE310 -103 handbook, halfpage VCEsat hFE (mV) -102 -10 102 -10-1 -1 -10 -102 -1 -10-1 -103 -104 IC (mA) -1 -10 -102 -103 -104 IC (mA) BCP69-25. BCP69-25. VCE = -1 V. IC/IB = 10. Fig.10 DC current gain as a function of collector current; typical values. Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Nov 25 10 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 mle312 102 (1) (2) (3) Rth(j-a) (K/W) (4) (5) 10 (6) (7) (8) (9) 1 = P (10) tp T t tp T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) (1) = 1.0. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0.0. Fig.12 Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm2 collector mounting pad. 2003 Nov 25 11 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2003 Nov 25 REFERENCES IEC JEDEC EIAJ SC-73 12 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Nov 25 13 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp14 Date of release: 2003 Nov 25 Document order number: 9397 750 12042