BCP69-25 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2002 Nov 15 2003 Nov 25

DISCRETE SEMICONDUCTORS

BCP69

PNP medium power transistor;

20 V, 1 A

book, halfpage

M3D087

2003 Nov 25 2

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

FEATURES

•High current

•Three current gain selections

•1.4 W total power dissipation.

APPLICATIONS

•Linear voltage regulators (LDO)

•High side switches

•Supply line switches

•MOSFET drivers

•Audio pre-amplifiers.

DESCRIPTION

PNP medium power transistor (see “Simplified outline,

symbol and pinning”) for package details.

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. MAX. UNIT

VCEO collector-emitter

voltage −−20 V

ICcollector current (DC) −−1A

CM peak collector current −−2A

FE DC current gain

BCP69 85 375

BCP69-16 100 250

BCP69-16/IN 140 230

BCP69-25 160 375

PRODUCT OVERVIEW

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER PACKAGE MARKING CODE

PHILIPS EIAJ

BCP69 SOT223 SC-73 BCP69

BCP69-16 SOT223 SC-73 BCP69/16

BCP69-16/IN SOT223 SC-73 69-16N

BCP69-25 SOT223 SC-73 BCP69/25

TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING

PIN DESCRIPTION

BCP69 1 base

2 collector

3 emitter

4 collector

handbook, halfpage

123

MAM288

Top view

2, 4

2003 Nov 25 3

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

RELATED PRODUCTS

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. See SOT223 (SC-73) standard mounting conditions.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223.

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad.

4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad.

TYPE NUMBER DESCRIPTION FEATURE

BCP68 NPN medium power transistor NPN complement

BC869 PNP medium power transistor SOT89, −20 V

BC369 PNP medium power transistor SOT54, −20 V

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCP69 −plastic surface mounted package; collector pad for good heat

transfer; 4 leads SOT223

BCP69-16

BCP69-16/IN

BCP69-25

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−32 V

VCEO collector-emitter voltage open base −−20 V

VEBO emitter-base voltage open collector −−5V

Ccollector current (DC) −−1A

CM peak collector current −−2A

BM peak base current −−200 mA

Ptot total power dissipation Tamb ≤25 °C; notes 1 and 2 −0.625 W

Tamb ≤25 °C; notes 1 and 3 −1W

amb ≤25 °C; notes 1 and 4 −1.4 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2003 Nov 25 4

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

handbook, halfpage

-65 -5 Tamb (°C)

Ptot

(W)

55 175

1.6

1.2

0.4

0.8

115

MLE311

(1)

(2)

(3)

Fig.1 Power derating curve.

(1) 6 cm2 collector mounting pad.

(2) 1 cm2 collector mounting pad.

(3) Standard PCB footprint.

THERMAL CHARACTERISTICS

Notes

1. See SOT223 (SC-73) standard mounting conditions.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223.

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad.

4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to

ambient Tamb ≤25 °C; notes 1 and 2 200 K/W

Tamb ≤25 °C; notes 1 and 3 125 K/W

Tamb ≤25 °C; notes 1 and 4 89 K/W

Rth(j-s) thermal resistance from junction to

solder point Tamb ≤25 °C 15 K/W

2003 Nov 25 5

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

handbook, full pagewidth

MSA443

1.20

(4x)

3.90

5.90

4.80

7.40

231

3.85

1.20 (3x)

1.30 (3x)

,,,,

0.30

3.60

3.50

7.00

6.15

7.65

solder lands

solder resist

occupied area

solder paste

Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering).

Dimensions in mm.

2003 Nov 25 6

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

handbook, halfpage

MDB845

30 mm

20 mm

40 mm

32 mm

2.6 mm

1.3 mm

5 mm

1.6 mm

0.5 mm

3.96 mm

Fig.3 6 cm2 collector mounting pad.

Dimensions in mm.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =−25 V; IE=0 −−−100 nA

VCB =−25 V; IE= 0; Tj= 150 °C−−−10 µA

IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−−100 nA

hFE DC current gain BCP69

VCE =−10 V; IC=−5mA 50

CE =−1 V; IC=−500 mA 85 −375

VCE =−1 V; IC=−1A 60 −−

BCP69-16

VCE =−1 V; IC=−500 mA 100 −250

BCP69-16/IN

VCE =−1 V; IC=−500 mA 140 230

BCP69-25

VCE =−1 V; IC=−500 mA 160 375

VCEsat collector-emitter saturation voltage IC=−1 A; IB=−100 mA −−−500 mV

VBE base-emitter voltage VCE =−10 V; IC=−5mA −−−700 mV

VCE =−1 V; IC=−1A −−−1V

ccollector capacitance VCB =−10 V; IE=i

e= 0; f = 1 MHz −28 −pF

fTtransition frequency VCE =−5 V; IC=−50 mA; f = 100 MHz 40 140 −MHz

2003 Nov 25 7

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

handbook, halfpage

(5)

(7)

(A)

VCE (V)

−2.4

−1.6

−2.0

−0.8

−1.2

−0.4

0−1−5

−2−3−4

MLE303

(8)

(10)

(6)

(4)

(3)

(2)

(9)

(1)

Fig.4 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB=−18.0 mA.

(2) IB=−16.2 mA.

(3) IB=−14.4 mA.

(4) IB=−12.6 mA.

(5) IB=−10.8 mA.

(6) IB=−9.0 mA.

(7) IB=−7.2 mA.

(8) IB=−5.4 mA.

(9) IB=−3.6 mA.

(10) IB=−1.8 mA.

Tamb =25°C.

BCP69-16.

mle304

−400

−600

−200

−800

−1000

VBE

(mV)

IC (mA)

−10−1−104

−103

−1−102

−10

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

VCE =−1V.

BCP69-16.

2003 Nov 25 8

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

handbook, halfpage

102

103

MLE305

−10−1−1−10 −102−103−104

IC (mA)

hFE

Fig.6 DC current gain as a function of collector

current; typical values.

VCE =−1V.

BCP69-16.

handbook, halfpage

MLE306

−10

−103

−102

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103−104

−1

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

BCP69-16.

2003 Nov 25 9

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

handbook, halfpage

(5)

(7)

(A)

VCE (V)

−2.4

−2.0

−1.6

−1.2

−0.8

−0.4

0−1−5

−2−3−4

MLE307

(8)

(10)

(6)

(9)

(2)

(1)

(3)

(4)

Fig.8 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB=−12 mA.

(2) IB=−10.8 mA.

(3) IB=−9.6 mA.

(4) IB=−8.4 mA.

(5) IB=−7.2 mA.

(6) IB=−6.0 mA.

(7) IB=−4.8 mA.

(8) IB=−3.6 mA.

(9) IB=−2.4 mA.

(10) IB=−1.2 mA.

Tamb =25°C.

BCP69-25.

mle304

−400

−600

−200

−800

−1000

VBE

(mV)

IC (mA)

−10−1−104

−103

−1−102

−10

Fig.9 Base-emitter voltage as a function of

collector current; typical values.

VCE =−1V.

BCP69-25.

2003 Nov 25 10

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

handbook, halfpage

102

103

MLE309

−10−1−1−10 −102−103−104

IC (mA)

hFE

Fig.10 DC current gain as a function of collector

current; typical values.

VCE =−1V.

BCP69-25.

handbook, halfpage

MLE310

−102

−103

−10

−1

−10−1IC (mA)

VCEsat

(mV)

−102−103−104

−10−1

Fig.11 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

BCP69-25.

2003 Nov 25 11

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

mle312

10−51010−2

10−4102

10−1tp (s)

10−3103

102

Rth(j-a)

(K/W)

10−1

(10)

(9)

(8)

(7)

(1)

(4)

(5)

(3)

(6)

δ =

(2)

Fig.12 Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm2 collector

mounting pad.

(1) δ= 1.0.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ= 0.0.

2003 Nov 25 12

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

2003 Nov 25 13

Philips Semiconductors Product speciﬁcation

PNP medium power transistor;

20 V, 1 A BCP69

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

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Printed in The Netherlands R75/05/pp14 Date of release: 2003 Nov 25 Document order number: 9397 750 12042