SSM07N70CP-A - Silicon Standard Corporation

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N-channel Enhancement-mode Power MOSFET

Dynamic dv/dt rating BVDSS 675V

Repetitive Avalanche Rated RDS(ON) 1.2 Ω

Fast Switching ID 7A

Simple Drive Requirement

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Symbol Units

VDS

Drain-Source Voltage V

VGS

Gate-Source Voltage V

ID @ TC=25°C Continuous Drain Current, VGS @ 10V A

ID @ TC=100°C Continuous Drain Current, VGS @ 10V A

IDM

Pulsed Drain Current1

A

PD @ TC=25°C Total Power Dissipation W

W/°C

EAS

Single Pulse Avalanche Energy2

mJ

IAR

Avalanche Current A

EAR

Repetitive Avalanche Energy mJ

TSTG

TJ Operating Junction Temperature Range

THERMAL DATA

Symbol Value Unit

Rthj-c Thermal Resistance Junction-case Max. 1.4 °C/W

Rthj-a Thermal Resistance Junction-ambient Max. 62 °C/W

140

-55 to 150 °C

Parameter

7

Parameter

Storage Temperature Range -55 to 150 °C

18

89

Linear Derating Factor 0.7

7

4.4

Rating

675

The SSM07N70C series is specially designed as a main switching device

for universal 90~265VAC off-line AC/DC converter applications.

Both TO-220 and TO-262 type provide high blocking voltage to overcome

voltage surge and sag in the toughest power system with the best

combination of fast switching,ruggedized design and cost-effectiveness.

The TO-220 and TO-262 packages are widely preferred for all commercial

and industrial applications. The device is well suited for switch-mode

power supplies, AC-DC converters and high-current high-speed switching

circuits.

± 30

GDS TO-262 (R)

GDSTO-220 (P)

G

D

S

SSM07N70CP,R-A

3/21/2005 Rev.2.01

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Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=1mA 675 - - V

∆BVDSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.6 - V/°C

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A - - 1.2 Ω

VGS(th)

Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V

gfs

Forward Transconductance VDS=10V, ID=3.5A - 4.5 - S

IDSS

Drain-Source Leakage Current (Tj=25oC)

VDS=675V, VGS=0V - - 10

uA

Drain-Source Leakage Current (Tj=150oC)

VDS=480V, VGS=0V - - 100

uA

IGSS

Gate-Source Leakage VGS=--

nA

Qg

Total Gate Charge3

ID=7A - 32 -

nC

Qgs

Gate-Source Charge VDS=480V - 8.6 -

nC

Qgd

Gate-Drain ("Miller") Charge VGS=10V - 9 -

nC

td(on)

Turn-on Delay Time3

VDD=300V - 17 -

ns

tr

Rise Time ID=7A - 15 -

ns

td(off) Turn-off Delay Time RG=10Ω, VGS=10V - 35 - ns

tf

Fall Time RD=43Ω -18-ns

Ciss Input Capacitance VGS=0V - 2075 - pF

Coss Output Capacitance VDS=25V - 120 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 7 A

ISM Pulsed Source Current ( Body Diode )1--18

A

VSD

Forward On Voltage3

Tj=25°C, IS=7A, VGS=0V - - 1.5 V

Notes:

1.Pulse width limited by safe operating area.

2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A.

3.Pulse width <300us , duty cycle <2%.

±100

± 30V

SSM07N70CP,R-A

3/21/2005 Rev.2.01

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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Normalized BVDSS vs. Junction Fig 4. Normalized On-Resistance

Temperature vs. Junction Temperature

0

0.5

1

1.5

2

2.5

3

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

VG=10V

ID=3.5A

0.8

0.9

1

1.1

1.2

-50 0 50 100 150

T j , Junction Temperature ( oC)

Normalized BVDSS (V)

0

2

4

6

8

10

12

0 5 10 15 20 25

VDS , Drain-to-Source Voltage (V)

ID , Drain Curre nt (A)

TC=25oC

VG=6.0V

VG=5.5V

VG=5.0V

VG=4.0V

VG=10V

0

2

4

6

8

010203040

VDS , Drain-to-Source Voltage (V)

ID , Drain Curre nt (A)

TC=150 oC

VG=6.0V

VG=5.5V

VG=5.0V

VG=4.0V

VG=10V

SSM07N70CP,R-A

3/21/2005 Rev.2.01

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Fig 5. Maximum Drain Current vs. Fig 6. Typical Power Dissipation

Case Temperature

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

0

1

2

3

4

5

6

7

8

25 50 75 100 125 150

Tc , Case Temperature ( oC)

ID , Drain Current (A)

0

1

10

100

1 10 100 1000 10000

VDS (V)

ID (A)

Tc=25 oC

Single Pluse

10us

100us

1ms

10ms

100ms

0

20

40

60

80

100

0 50 100 150

Tc , Case Temperature( oC)

PD (W)

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Pulse Width (s)

Normalized Thermal Response (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

DUTY=0.5

SINGLE PULSE

SSM07N70CP,R-A

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Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

0

1

2

3

4

5

-50 0 50 100 150

Tj , Junction Temperature ( oC)

VGS(th) (V)

0.01

0.1

1

10

100

0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

VSD (V)

IS (A)

Tj = 25 oCTj = 150 oC

0

2

4

6

8

10

12

14

16

0 5 10 15 20 25 30 35 40 45 50

QG , Total Gate Charge (nC)

VGS , Gate to Source Voltage (V)

ID=7A

VDS=320V

VDS=400V

VDS=480V

1

100

10000

1 5 9 1317212529

VDS (V)

C (pF)

f

=1.0MHz

Ciss

Coss

Crss

SSM07N70CP,R-A

3/21/2005 Rev.2.01

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Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no

guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no

responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its

use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including

without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to

the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of

Silicon Standard Corporation or any third parties.

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

td(on) trtd(off) tf

VDS

VGS

10%

90%

Q

VG

10V

QGS QGD

QG

Charge

0.5x RATED VDS

TO THE

OSCILLOSCOPE

-

+10 V

D

G

S

VDS

VGS

RG

RD

0.8 x RATED VDS

TO THE

OSCILLOSCOPE

-

+

D

G

S

VDS

VGS

ID

IG

1~ 3 m

A

SSM07N70CP,R-A

3/21/2005 Rev.2.01