©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2786
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 4 V
ICCollector Current 20 mA
PCCollector Power Dissipation 250 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC=10µA, IE=0 30 V
BVCEO Collect or-E mitter Break down Voltage IC=5mA, IB=0 20 V
BVEBO E mitter-B ase Break down Voltage IE=10µA, IC=0 4 V
ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 µA
IEBO Emitter Cut-off Current VEB=4V, IC=0 0.1 µA
hFE DC Current Gain VCE=6V, IC=1mA 40 240
VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.72 V
VCE (sat) Collector-Emitter Saturat ion Voltage IC=10mA, IB=1mA 0.1 0.3 V
fTCurrent Gain Bandwidth Product VCE=6V, IC=1mA 400 600 MHz
Cob Output Capacitance VCB=6V, IE=0, f=1MHz 1.2 pF
Cc·rbb’ Collector-Base Time Constant VCE=6V, IC=1mA
f=31.9MHz 12 15 ps
NF Noise Figure VCE=6V, IC=1mA
RS=50Ω, f=100MHz 3.0 5.0 dB
GPE Power Gain VCE=6V, IC=1mA
f=100MHz 18 22 dB
Classification R O Y
hFE 40 ~ 80 70 ~ 140 120 ~ 240
KSC2786
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Osc illa tor
• High Current Gain Bandwidth Product : fT=600MHz (TYP)
• High Power Gain : GPE=22dB at f=100MHz
1.Emitter 2. Collector 3. Base
TO-92S
1
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2786
Typical Characteristics
Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage
Figure 3. DC Current Gain Figure 4. fT - IC
Figure 5. Saturation Voltage Figure 6. Output Capacitance
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
20
IB = 60µA
IB = 3 0µA
IB = 70µA
IB = 20µA
IB = 110µA
IB = 100µA
IB = 90µA
IB = 80µA
IB = 50µA
IB = 4 0µA
IB = 1 0µA
IC [mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10 VCE = 6 V
IC [mA], COLLECTOR CURRENT
VBE [V], BASE-EMITTER VOLTAGE
110
10
100
1000
VCE = 6V
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
110100
10
100
1000
10000 VCE = 6V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC [mA], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10 IC = 10 IB
VBE(sat)
VCE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
1 10 100
0.1
1
10
f = 1M Hz
IE = 0
Cob[pF], OUTPUT CAPACITANCE
VCB[V], COLL ECTOR-BASE VOLTAGE
©2002 Fairchild Semiconductor Corporation
KSC2786
Rev. A2, September 2002
Typical Characteristics (Continued)
Figure 7. yie - f Figure 8. yfe - f
Figure 9. yre - f Figure 10. yoe - f
Figure 11. yib - f Figure 12. yfb - f
0.1 1 10 100
0.01
0.1
1
10
100
bie
bie
gie
gie
10.7 MHz
100 MHz
VCE = 6 V
gie [ms], CONDUCTANCE
bie [ms], SUSCEPTANCE
IC [mA], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
gfe
gfe
-bfe
-bfe
100 MHz
100 MHz
10.7 MHz
10.7 MHz
VCE = 6 V
gfe [ms], CONDUCTANCE
bfe [ms], SUSCEPTA NCE
IC [mA], COLLECTOR CURRENT
0.1 1 10 100
0.5
0.4
0.3
0.2
0.1
0.0 VCE = 6 V
-gre
-gre
-bre
-bre
10.7 MHz
10.7 MHz
100 MHz
100 MHz
gre [ms], CONDUCTANCE
bre [ms], SUSC EPTA N CE
IC [mA], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
VCE = 6 V
goe
goe
boe
boe
10.7 MHz
10.7 MHz
100 MHz
100 MHz
goe [ms], CONDUCTANCE
boe [ms], SUSCEPTANCE
IC [mA], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
gib
gib -bib
-bib
10.7 MHz
10.7 MHz
100 MHz
100 MHz
VCE = 6 V
gib [ms], CONDUCTANCE
bib [ms], SUSCEPTANCE
IC [mA], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
gfb
gfb
bfb
bfb
100 MHz
100 MHz
10.7 MHz
10.7 MHz
VCE = 6 V
gfb [ms], CONDUCTANCE
bfb [ms], SUSCEPTANCE
IC [mA], COLLECTOR CURRENT
©2002 Fairchild Semiconductor Corporation
KSC2786
Rev. A2, September 2002
Typical Characteristics (Continued)
Figure 13. yrb - f Figure 14. yre - f
Figure 15. yfe - f Figure 16. yoe - f
Figure 17. Power Gian & NF Figure 18. yie - f
0.1 1 10 100
0.01
0.1
1VCE = 6 V
-grb
-grb
-brb
-brb
10.7 MHz
10.7 MHz
100 MHz
100 MHz
grb [ms], CONDUCTANCE
brb [m s], SU SCEPTA NCE
IC [mA], COLLECTOR CURRENT
10 100 1000
0.01
0.1
1
10
VCE = 6 V
IC = 1 mA
-bre
-gre
gre [ms], CONDUCTANCE
bre [m s], SU SC EP T AN C E
f [MHz], FREQUENCY
10 100 1000
1
10
100
1000
VCE = 6 V
IC = 1 mA
gfe
-bfe
gfe [ms], CONDUCTANCE
bfe [ms], SUSCEPTANCE
f [MHz], FREQUENCY
10 100 1000
0.01
0.1
1
10 VCE = 1 V
IC = 1 mA
boe
goe
goe [ms], CONDUCTANCE
boe [ms], SUSCEPTANCE
f [MHz], FREQUENCY
0.1 1 10
0
5
10
15
20
25
VCE = 6 V
f = 100 MHz
NF
GPE
NF [dB], NOISE FIGURE
GPE [dB], POWER GAIN
IC [mA], COLLECTOR CURRENT
10 100 1000
0.1
1
10
100
VCE = 6 V
IC = 1 mA
bie
gie
gie [ms], CONDUCTANCE
bie [ms], SUSCEPTANCE
f [MHz], FREQUENCY
©2002 Fairchild Semiconductor Corporation
KSC2786
Rev. A2, September 2002
Typical Characteristics (Continued)
4.00 ±0.20
3.72 ±0.20
2.86 ±0.20
2.31 ±0.20
3.70 ±0.20
0.77 ±0.10 14.47 ±0.30
(1.10)
0.49 ±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35 +0.10
–0.05
TO-92S
Package Dimensions
KSC2786
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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when properly used in accordance with instructions for use
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result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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