FQB6N80TM - Fairchild Semiconductor

September 2000

Rev. A, September 2000

FQB6N80 / FQI6N80

QFET

FQB6N80 / FQI6N80

800V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

Features

• 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 14 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximu m Ratings

TC = 25°C unless otherwise noted

Thermal Characteri stics

Symbol Parameter FQB6N80 / FQI6N80 Units

VDSS Drain-Source Voltage 800 V

IDDrain Current - Continuous (TC = 25°C) 5.8 A

- Continuous (TC = 100°C) 3.67 A

IDM Drain Current - Pulsed (Note 1) 23.2 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 680 mJ

IAR Avalanche Current (Note 1) 5.8 A

EAR Repetitive Avalanche Energy (Note 1) 15.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns

PDPower Dissipation (TA = 25°C) * 3.13 W

Power Dissipation (TC = 25°C) 158 W

- Derate above 25°C 1.27 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 0.79 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

D2-PAK

FQB Series I2-PAK

FQI Series

Rev. A, September 2000

FQB6N80 / FQI6N80

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics

TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 38mH, IAS = 5.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA800 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.9 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA

VDS = 640 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V , ID = 2.9 A -- 1.5 1.95 Ω

gFS Forward Transconductance VDS = 50 V, ID = 2.9 A -- 5.9 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1150 1500 pF

Coss Output Capacitance -- 125 160 pF

Crss Reverse Transfer Capacitance -- 14 18 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 400 V, ID = 5.8 A,

RG = 25 Ω

-- 30 70 ns

trTurn-On Rise Time -- 70 150 ns

td(off) Turn-Off De l a y Time -- 65 140 ns

tfTurn -Off Fa ll Time -- 45 100 ns

QgTotal Gate Charge VDS = 640 V, ID = 5.8 A,

VGS = 10 V

-- 31 nC

Qgs Gate-Source Charge -- 7.1 -- nC

Qgd Gate-Drain Charge -- 15 -- nC

Drain-Source Di ode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.8 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, I S = 5.8 A,

dIF / dt = 100 A/µs

-- 650 -- ns

Qrr Reverse Recovery Charge -- 5.7 - - µC

FQB6N80 / FQI6N80

0.2 0.4 0.6 0.8 1.0 1.2

10-1

100

101

150℃

※ Notes :

1. VGS = 0V

2. 250μ

s Pulse Test

25℃

IDR, Reverse Drain Current [A]

VSD, Sour c e-Drain vo ltag e [V]

0 4 8 12 16

VGS = 20V

VGS = 10V

※ N ote : T J = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

246810

10-1

100

101

150oC

25oC

-55oC

※ No tes :

1. VDS = 50V

2. 250μ

s Pu lse T es t

ID, Drain Cur re nt [A]

VGS, Gate-Source Voltage [V]

10-1 100101

10-1

100

101

VGS

To p : 15 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

B o tto m : 5 .5 V

※ No tes :

1. 250μ

s Pu lse Tes t

2. TC = 25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

0 5 10 15 20 25 30 35

VDS = 400V

VDS = 160V

VDS = 640V

※ Note : ID = 5.8A

VGS, Gate-Source Voltage [V]

QG, Tota l Ga t e Cha rg e [nC]

10-1 100101

200

400

600

800

1000

1200

1400

1600

1800

2000 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ N o te s :

1 . V GS = 0 V

2 . f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitanc e Ch a racteristics Figure 6. Gate Charge C haracteris tics

Figure 3. On-Resistanc e Variation vs

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ics

FQB6N80 / FQI6N80

Rev. A, September 2000

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ No te s :

1 . ZθJC(t) = 0.7 9 ℃/W Ma x.

2 . D u ty F a c to r, D= t 1/t2

3 . TJM - T C = PDM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), T herm al R esponse

t1, Sq u a re W a ve P u lse D u ra tio n [se c ]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [℃

]

100101102103

10-2

10-1

100

101

102

10μ

DC10 ms 1 m s

100μ

Op e r a tio n in T h is A re a

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. VGS = 10 V

2. ID = 2.9 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = 250 μ

BV DSS , (N ormaliz e d )

Drain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

Figu re 7. Breakdown Voltage Variation

vs Temperature Figure 8. On-Resistance Variation

vs Temperature

Figure 11. Transient Thermal Respons e Cur ve

PDM

FQB6N80 / FQI6N80

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQB6N80 / FQI6N80

Rev. A, September 2000

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con troll ed by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQB6N80 / FQI6N80

Package Dimensions

10.00 ±0.20

(8.00)

(4.40)

1.27 ±0.10 0.80 ±0.10

0.80 ±0.10

(2XR0.45)

9.90 ±0.20 4.50 ±0.20

0.10 ±0.15

2.40 ±0.20

2.54 ±0.30

15.30 ±0.30

9.20 ±0.20

4.90 ±0.20

1.40 ±0.20

2.00 ±0.10

(0.75)

(1.75)

(7.20)

0°~3°

1.20 ±0.20

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

(0.40)

2.54 TYP 2.54 TYP

1.30 +0.10

–0.05

0.50 +0.10

–0.05

D2PAK

FQB6N80 / FQI6N80

Rev. A, September 2000

Package Dimensions (Continued)

9.90 ±0.20

2.40 ±0.20

4.50 ±0.20

1.27 ±0.10 1.47 ±0.10

(45°)

0.80 ±0.10

10.00 ±0.20

2.54 TYP2.54 TYP

13.08 ±0.20

9.20 ±0.20

1.20 ±0.20

10.08 ±0.20 MAX13.40

MAX 3.00

(0.40)

(1.46)

(0.94)

1.30 +0.10

–0.05

0.50 +0.10

–0.05

I2PAK

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

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GTO™

HiSeC™

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OPTOLOGIC™

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PowerTrench®

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production T his datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. F1

VCX™