2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N6790U. * JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/555 available. * RoHS compliant versions available (commercial grade only). U-18 LCC Package Also available in: TO-205AF Package APPLICATIONS / BENEFITS * * * (leaded) 2N6790U High frequency operation. Lightweight package. ESD to class 1A. MAXIMUM RATINGS @ T C = +25 C unless otherwise noted Parameters / Test Conditions Junction & Storage Temperature Thermal Resistance Junction-to-Case Drain to Gate Voltage Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = +25 C Continuous Drain Current @ TC = +100 C (1) Off-State Power Dissipation Source Current - Drain Diode (Forward Biased V SD ) Off-State Current (2) Drain to Source On State Resistance Symbol TJ , Tstg R JC V DG V DS V GS I D1 I D2 P D1 IS I DM r DS(on) Value -55 to +150 8.93 200 200 20 2.8 1.8 14 2.8 11 0.80 Notes: 1. Derated linearly by 0.11 W/C for T C > +25 C. 2. V GS = 10 V, I D = 1.8 A Unit C C/W V V V A A W A A (pk) MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0229-1, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 1 of 7 2N6790U MECHANICAL and PACKAGING * * * * * * CASE: Ceramic LCC-18 with kovar gold plated lid. TERMINALS: Gold plating over nickel. MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location. POLARITY: See pad layout. TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6790 U (e3) Reliability Level JAN=JAN level JANTX=JANTX level JANTXV=JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface Mount package JEDEC type number SYMBOLS & DEFINITIONS Definition Symbol ID IF TC V DD V DS V GS Drain current. Forward current. Case temperature. Drain supply voltage. Drain to source voltage. Gate to source voltage. T4-LDS-0229-1, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 2 of 7 2N6790U ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage V GS = 0 V, I D = 1 mA V (BR)DSS 200 Gate-Source Voltage (Threshold) V DS V GS , I D = 0.25 mA V DS V GS , I D = 0.25 mA, Tj = +125 C V DS V GS , I D = 0.25 mA, Tj = -55 C V GS(th)1 V GS(th)2 V GS(th)3 2.0 1.0 Gate Current V GS = 20 V, V DS = 0 V V GS = 20 V, V DS = 0 V, Tj = +125 C I GSS1 I GSS2 Max. Unit OFF CHARACTERTICS V 4.0 V 5.0 100 200 nA Max. Unit I DSS1 I DSS2 25 0.25 A mA Static Drain-Source On-State Resistance V GS = 10 V, I D = 1.8 A pulsed V GS = 10 V, I D = 2.8 A pulsed r DS(on)1 r DS(on)2 0.80 0.85 T j = +125C V GS = 10 V, I D = 1.8 A pulsed r DS(on)3 1.50 Diode Forward Voltage V GS = 0 V, I D = 2.8 A pulsed V SD 1.5 V Max. Unit Parameters / Test Conditions Symbol Min. ON CHARACTERTICS Drain Current V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 160 V, Tj = +125 C DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Min. Q g(on) Q gs Q gd 14.3 3.0 9.0 nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time T4-LDS-0229-1, Rev. 1 (120717) Symbol I D = 2.8A, V GS = 10 V Gate drive impedance = 7.5 , V DD = 74 V di/dt = 100 A/s, V DD 50 V, I D = I D1 = 2.8 A (c)2012 Microsemi Corporation Min. Max. Unit t d(on) tr t d(off) tf 40 50 50 50 ns t rr 400 ns Page 3 of 7 2N6790U NORMALIZED TRANSIENT THERMAL IMPEDANCE GRAPHS T 1 , RECTANGLE PULSE DURATION (SEC) ID DRAIN CURRENT (AMPERES) Figure 1 Thermal Impedance Curves T C CASE TEMPERATURE (C) Figure 2 Maximum Drain Current vs. Case Temperature Graph T4-LDS-0229-1, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 4 of 7 2N6790U ID DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3 Maximum Safe Operating Area T4-LDS-0229-1, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 5 of 7 2N6790U PACKAGE DIMENSIONS Ltr Inches Min Dimensions Millimeters Max Min Max BL BW CH LL1 LL2 LS LS1 .345 .360 .280 .295 .095 .115 .040 .055 .055 .065 .050 BSC .025 BSC 8.77 9.14 7.12 7.49 2.42 2.92 1.02 1.39 1.40 1.65 1.27 BSC 0.635 BSC LS2 LW Q1 Q2 Q3 TL TW .008 BSC .020 .030 .105 REF .120 REF .045 .055 .070 .080 .120 .130 0.203 BSC 0.51 0.76 2.67 REF 3.05 REF 1.14 1.40 1.78 2.03 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0229-1, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 6 of 7 2N6790U PAD LAYOUT PAD ASSIGNMENTS T4-LDS-0229-1, Rev. 1 (120717) (c)2012 Microsemi Corporation Page 7 of 7