T4-LDS-0229-1, Rev. 1 (120717) ©2012 Microsemi Corporation Page 1 of 7
2N6790U
Available on
commercial
versions
N-CH ANNEL MOSFET
Qualified per MIL-PRF-19500/555
Quali f i ed Levels:
JAN , JANTX, and
JANTXV
DESCRIPTION
This 2N6790U device is military q ualified u p to a JANTXV level for high-reliability ap plic ation s.
Microsemi al so o ffers numerou s other products to meet hi gher and lower power voltage
regu lation app lications.
U-18 LCC
Package
Also available in:
TO-205AF Package
(leaded)
2N6790U
Important: For the latest information, visi t our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6790U.
• JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/555 available.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENE FITS
• High frequency operation.
• Lightweight package.
• ESD to class 1A.
MAXIMUM RATINGS @ TC = +25 °C u nless oth er wis e not ed
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Busi ness Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol Value Unit
Junction & Stor age Temperatur e
T
J
, T
stg
-55 to +150
°C
Thermal Resistance Junction-to-Case
RӨJC
8.93
ºC/W
Drain to Gate Voltage
VDG
200
V
Drain – Source Voltage
V
DS
200
V
Gate – Source Voltage
VGS
± 20
V
Continuous Drain Current @ TC = +25 °C
ID1
2.8
A
Continuous Drain Current @ TC = +100 °C
ID2
1.8
A
Off-State Power Dissipation (1)
PD1
14
W
Source Current – Drain Diode (Forward Biased VSD)
IS
2.8
A
Off-State Current
IDM
11
A (pk)
Drain to Source On State Resistance (2)
rDS(on)
0.80
Ω
Notes: 1. Derated linearly by 0.11 W/°C for TC > +25 °C.
2. VGS = 10 V, ID = 1.8 A
T4-LDS-0229-1, Rev. 1 (120717) ©2012 Microsemi Corporation Page 2 of 7
2N6790U
• CASE: Ceramic LCC-18 wi th kovar gold plated lid.
• TERMINALS: Gold plating over nickel.
• MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location.
• POLARITY: See pad layout.
• TAPE & REEL option: S tandard per EIA-481-D. Consult factory for quantities.
• See Package Dimensions on last page.
JAN 2N6790 U (e3)
Reliability Level
JAN=JAN level
JANTX=JANTX level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount package
SYMBOLS & DEFINIT IONS
Symbol
Definition
ID
Drain current.
IF
Forward current.
TC
Case temperature.
VDD
Drain supply voltage.
VDS
Drain to source voltage.
VGS
Gate to source voltage.
T4-LDS-0229-1, Rev. 1 (120717) ©2012 Microsemi Corporation Page 3 of 7
2N6790U
Paramete r s / Test Conditions Symbol Min. Max. Unit
OFF CHARACTER TICS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1 mA V(BR)DSS 200 V
Gate-Source Voltage (Threshold)
VDS ≥ V GS, ID = 0.25 mA
VDS ≥ V GS, ID = 0.25 mA, Tj = +125 °C
VDS ≥ V GS, ID = 0.25 mA, Tj = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ±20 V, VDS = 0 V
VGS = ±20 V, VDS = 0 V, Tj = +125 °C
IGSS1
IGSS2
±100
±200 nA
Paramete r s / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Drain Current
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 160 V, Tj = +125 °C
IDSS1
IDSS2
25
0.25
µA
mA
Stati c Drain-Source On-State Resistance
VGS = 10 V, ID = 1.8 A pulsed
rDS(on)1
0.80
Ω
V
GS
= 10 V, I
D
= 2.8 A pulsed
r
DS(on)2
0.85
Ω
Tj = +125°C
VGS = 10 V, I D = 1.8 A pulsed
rDS(on)3
1.50
Ω
Diode Forward Voltage
VGS = 0 V, ID = 2.8 A pulsed
VSD
1.5
V
DYNAMIC CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Gate Charge:
nC
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q
g(on)
Qgs
Qgd
14.3
3.0
9.0
SWIT CHING CHARACTERI STICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 2.8A , VGS = 10 V
Gate drive impedance = 7.5 Ω,
VDD = 74 V
td(on)
tr
td(off)
tf
40
50
50
50
ns
Diode Reverse
Recover y Ti m e
di/dt = 100 A/µs, VDD ≤ 50 V,
ID = ID1 = 2.8 A trr 400 ns
T4-LDS-0229-1, Rev. 1 (120717) ©2012 Microsemi Corporation Page 4 of 7
2N6790U
T1, RE CTANGLE PULSE DURATION (SEC)
Figure 1
Thermal Imp edance Cu r ves
TC CASE TEMPERATURE (°C)
Figure 2
Max i mum D r ai n Current vs. Case Temperatu r e Graph
ID DRAIN CURRE NT (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
T4-LDS-0229-1, Rev. 1 (120717) ©2012 Microsemi Corporation Page 5 of 7
2N6790U
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3
Max i mum Safe Operating Ar ea
ID DRAIN CURRE NT (AMPERES)
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2N6790U
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.345
.360
8.77
9.14
BW
.280
.295
7.12
7.49
CH
.095
.115
2.42
2.92
LL1
.040
.055
1.02
1.39
LL2
.055
.065
1.40
1.65
LS
.050 BSC
1.27 BSC
LS1 .025 BSC 0.635 BSC
LS2
.008 BSC
0.203 BSC
LW
.020
.030
0.51
0.76
Q1
.105 REF
2.67 REF
Q2
.120 REF
3.05 REF
Q3
.045
.055
1.14
1.40
TL
.070
.080
1.78
2.03
TW
.120
.130
3.05
3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general
infor mation only.
3. In accordance with ASME Y14.5M,
diameters are equival ent to Φx
symbology.
T4-LDS-0229-1, Rev. 1 (120717) ©2012 Microsemi Corporation Page 7 of 7
2N6790U
PAD ASSIGNMENTS