DMN63D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) 30V 4.2 @ VGS = 4.5V 2.8 @ VGS = 10V * * * * * * * * * ID TA = 25C 200mA 260mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications * * * * Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc * * Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT363 ESD PROTECTED Top View D2 G1 S1 S2 G2 D1 Top View Internal Schematic Ordering Information (Note 4) Part Number DMN63D8LDW-7 DMN63D8LDW-13 Notes: Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information MM4 YM MM4 YM NEW PRODUCT Product Summary Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN63D8LDW Document number: DS36021 Rev. 3 - 2 Mar 3 MM4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Z = 2012) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D November 2012 (c) Diodes Incorporated DMN63D8LDW Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +70C TA = +25C TA = +70C ID Units V V mA 260 210 800 ID Pulsed Drain Current (10s pulse, duty cycle = 1%) Value 30 20 220 170 IDM mA mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Value 300 400 435 330 139 -55 to 150 PD RJA RJC TJ, TSTG Units mW C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1.0 10.0 V A A VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS (ON) gFS VSD 0.8 1.5 2.8 3.8 4.2 4.5 13 1.2 V Static Drain-Source On-Resistance 0.8 80 - mS V VDS = VGS, ID = 250A VGS = 10.0V, ID = 250mA VGS = 5V, ID = 250mA VGS = 4.5V, ID = 250mA VGS = 4.0V, ID = 250mA VGS = 2.5V, ID = 10mA VDS = 10V, ID = 0.115A VGS = 0V, IS = 115mA Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf 22.0 3.2 2.0 79.9 0.87 0.43 0.11 0.11 3.3 3.2 12.0 6.3 pF VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 30V, ID = 150mA nS VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN63D8LDW Document number: DS36021 Rev. 3 - 2 2 of 6 www.diodes.com November 2012 (c) Diodes Incorporated DMN63D8LDW 0.8 0.6 VGS = 10.0V 0.7 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 0.6 VGS = 4.0V 0.5 VGS = 3.0V 0.4 0.3 0.2 VGS = 2.5V 0.4 0.3 TA = 150C 0.2 T A = 125C TA = 85C 0.1 0.1 T A = 25C VGS = 2.0V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 5 4 VGS = 2.5V 3 VGS = 4.5V 2 VGS = 10V 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 5.0 4.5 4.0 3.5 3.0 ID = 250mA 2.5 ID = 100mA 2.0 ID = 10mA 1.5 1.0 0 5 10 15 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 10 VGS = 5.0V ID = 300mA VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT 0.5 8 TA = 150C 6 TA = 125C 4 T A = 85C T A = 25C 2 1.4 VGS = 4.0V ID = 200mA 1.2 1.0 0.8 T A = -55C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN63D8LDW Document number: DS36021 Rev. 3 - 2 0.8 3 of 6 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2012 (c) Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.0 5.0 4.5 4.0 3.5 3.0 2.5 VGS = 4.0V ID = 200mA 2.0 1.5 VGS = 5.0V ID = 300mA 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 1.8 1.6 ID = 1mA 1.4 1.2 ID = 250A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 0.8 0.7 IS, SOURCE CURRENT (A) NEW PRODUCT DMN63D8LDW 0.6 0.5 TA = 150C 0.4 TA = 125C 0.3 TA = 85C 0.2 T A = 25C T A = -55C 0.1 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current DMN63D8LDW Document number: DS36021 Rev. 3 - 2 4 of 6 www.diodes.com November 2012 (c) Diodes Incorporated DMN63D8LDW Package Outline Dimensions NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0 8 All Dimensions in mm B C H K M J D F L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMN63D8LDW Document number: DS36021 Rev. 3 - 2 5 of 6 www.diodes.com November 2012 (c) Diodes Incorporated DMN63D8LDW NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2012, Diodes Incorporated www.diodes.com DMN63D8LDW Document number: DS36021 Rev. 3 - 2 6 of 6 www.diodes.com November 2012 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: DMN63D8LDW-13 DMN63D8LDW-7