Parameter Symbol IRLR8103V Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain or Source T C = 25°C ID91
Current (VGS ≥ 10V) TC = 90°C 63 A
Pulsed Drain CurrentIDM 363
Power Dissipation TC = 25°C PD115 W
TC = 90°C 60
Junction & Storage Temperature Range TJ, TSTG –55 to 150 °C
Continuous Source Current (Body Diode) IS 91 A
Pulsed Source CurrentISM 363
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity .
The IRLR8103V offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
IRLR8103V
RDS(on) 7.9mΩ
QG 27nC
Qsw 12nC
Qoss 29nC
Absolute Maximum Ratings
Parameter Max. Units
Maximum Junction-to-AmbientRθJA 50 °C/W
Maximum Junction-to-Case RθJC 1.09 °C/W
Thermal Resistance
DEVICE CHARACTERISTICS
11/21/2000
D-Pak
IRLR8103V
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S
D
G
PD-94021A
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IRLR8103V
Parameter Min Typ Max Units Conditions
Diode Forward VSD 0.9 1.3 V IS = 15A, V GS = 0V
Voltage
Reverse Recovery Qrr 103 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IF = 15A
Reverse Recovery Qrr(s) 96 nC di/dt = 700A/µs
Charge (with Paral le l (with 10BQ040)
Schottky)VDS = 16V, V GS = 0V, IF = 15A
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 – – V VGS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source RDS(on) mΩ
on Resistance
Gate Threshold Voltage V GS(th) 1.0 V VDS = VGS, ID = 250µA
Drain-Source Leakage IDSS 20 VDS = 24V, VGS = 0
Current* 100 µA VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage IGSS ±100 nA VGS = ±20V
Current
Total Gate Chg Cont FET QG27 VGS=5V, ID=15A, VDS=16V
Total Gate Chg Sync FET QG23 VGS = 5V, VDS< 100mV
Pre-Vth QGS1 4.7
Gate-Source Charge
Post-Vth QGS2 2.0 nC VDS = 16V, ID = 15A
Gate-Source Charge
Gate to Drain Charge QGD 9.7
Switch Chg(Qgs2 + Qgd) Q
sw 12
Output Charge Qoss 29 VDS = 16V, VGS = 0
Gate Resistance RG2.4 Ω
Turn-on Delay Time td (on) 10 VDD = 16V, ID = 15A
Rise Time tr9nsV
GS = 5V
Tur n-off Delay Time td (off) 24 Clamped Inductive Load
F all Time tf18
Input Capacitance Ciss – 2672 –
Output Capacitance Coss – 1064 – pF VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss – 109 –
Electrical Characteristics
Source-Drain Rating & Characteristics
Current
Charge
Notes:
Repetitive r ating; pulse width limited by max. junction temperature .
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
6.9 9.0 VGS = 10V, I D = 15A
7.9 10.5 VGS = 4.5V, ID = 15A
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IRLR8103V
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
15A
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
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IRLR8103V
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
1 10 100
0
1000
2000
3000
4000
5000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
0 5 10 15 20 25 30
0
1
2
3
4
5
6
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D15A
V = 15V
DS
V = 24V
DS
1
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
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IRLR8103V
RD
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RGD.U.T.
10V
+
-
25 50 75 100 125 150
0
20
40
60
80
100
T , Case Temperature( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RGD.U.T.
10V
VDD
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRLR8103V
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
0.0 2.0 4.0 6.0 8.0
VGS, Gate -to -Source Voltage (V)
0.006
0.008
0.010
0.012
0.014
RDS(on), Drain-to -Source On Resistance ( Ω)
ID = 15A
0 50 100 150 200 250 300 350
ID , Drain Current ( A )
0.006
0.008
0.010
0.012
0.014
0.016
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
VGS = 4.5V
VGS = 10V
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IRLR8103V
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Par t Marking Infor mation
6.73 (.265 )
6.35 (.250 )
- A -
4
1 2 3
6.22 (.2 45)
5.97 (.2 35)
- B -
3X 0.89 (.035 )
0.64 (.025 )
0.25 (.01 0) M A M B
4 .57 (.18 0)
2.28 (.09 0)
2X 1.14 (.0 45)
0.76 (.0 30)
1.52 (.060)
1.15 (.045)
1.02 (.04 0)
1.64 (.02 5)
5 .46 (.215 )
5 .21 (.205 ) 1.27 (.050 )
0.88 (.035 )
2.38 (.09 4)
2.19 (.08 6) 1.14 (.045)
0.89 (.035)
0.58 (.02 3)
0.46 (.01 8)
6.45 (.2 45)
5.68 (.2 24)
0 .51 (.02 0)
MIN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
10.42 (.4 10)
9.40 (.370)
NOTES:
1 DIM ENS IO NING & T OLER ANCING PE R AN SI Y14.5M , 1982 .
2 C ONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO- 252AA.
4 D IMENSION S SHOWN ARE BEFORE SOLD ER DIP,
SO LDER DIP M AX. + 0.16 (.0 06).
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IRLR8103V
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice.11/00
TR
1 6. 3 ( .6 4 1 )
1 5. 7 ( .6 1 9 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIR ECT ION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CO NTROLLING DIM ENS IO N : M ILLIM ETER.
2. ALL DIME NSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. O UT LIN E CONFO R MS TO EIA-481 & EIA -541.
NOT ES :
1. OU TLINE CONFO RMS TO EIA-481.
16 m m
13 IN C H
D-Pak (TO-252AA) Tape & Reel Infor mation
Dimensions are shown in millimeters (inches)
