10V Drive Nch MOSFET R6020ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 4.5 2.54 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 (3) (2) Collector (Drain) zApplications Switching (3) Emitter (Source) Each lead has same dimensions LPTL 8.9 4.8 zPackaging specifications <LPTS> Package Type Taping TL Code 1000 Basic ordering unit (pieces) R6020ANJ (1) Base (Gate) (2) Collector (Drain) (2) (3) Each lead has same dimensions (3) Emitter (Source) <LPTL> Package Type (1) Taping Code TLL Basic ordering unit (pieces) 1000 R6020ANJ zAbsolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VDSS 600 V Drain-source voltage Gate-source voltage Source current (Body Diode) 30 V 3 20 A 1 80 A 20 A 1 80 A 10 A 26.7 mJ 100 W VGSS Continuous Drain current zInner circuit ID Pulsed IDP Continuous IS Pulsed ISP 3 Avalanche Current IAS 2 Avalanche Energy EAS 2 Total power dissipation (Tc=25C) PD Channel temperature Tch 150 C Range of storage temperature Tstg -55 to +150 C 1 (1) (1) Gate (2) Drain (3) Source (2) (3) 1 Body Diode 1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum temperature allowed zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 1.25 C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.06 - Rev.A R6020ANJ Data Sheet zElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit IGSS - - 100 nA V(BR)DSS 600 - - V ID=1mA, VGS=0V IDSS - - 100 A VDS=600V, VGS=0V Gate threshold voltage VGS(th) 2.5 - 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) - 0.19 0.25 ID=10A, VGS=10V Forward transfer admittance | Yfs | 7 - - S ID=10A, VDS=10V Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Conditions VGS=30V, VDS=0V Input capacitance Ciss - 2040 - pF VDS=25V Output capacitance Coss - 1660 - pF VGS=0V Reverse transfer capacitance Crss Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) tf Fall time Qg Total gate charge Gate-source charge Qgs Gate-drain charge Qgd - 70 - pF f=1MHz - 40 - ns ID=10A, VDD 300V - 60 - ns VGS=10V - 230 - ns RL=30 - 70 - ns RG=10 - 65 - nC - 10 - nC - 25 - nC VDD 300V ID=20A VGS=10V RL=15 / RG=10 Pulsed zBody diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Symbol VSD Min. - Typ. - Max. 1.5 Unit V Conditions IS=10A, VGS=0V Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.06 - Rev.A R6020ANJ Data Sheet 100 GATE THRESHOLD VOLTAGE: VGS(th) (V) zElectrical characteristics curves 100 10 DRAIN CURRENT : ID(A) Operation in this area is limited by RDS(ON) Pw=100u Pw=1m 0.1 PW=10m Tc = 25C Single Pulse 0.1 0.01 DC operation 0.01 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 1 1 10 100 0.001 0.0 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( ) 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 0.01 0.001 0.01 0.1 1 10 0.4 ID= 10.0A ID= 20.0A 0.2 0 0 5 10 DRAIN CURRENT : ID(A) GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate Source VDS= 10V Pulsed 10 1 Ta= -25C Ta= 25C Ta= 75C Ta= 125C 0.01 0.01 0.1 1 10 3 2 1 0 -50 100 100 150 VGS= 10V Pulsed 0.4 ID= 20.0A 0.3 0.2 ID= 10.0A 0.1 0 -50 0 50 100 150 CHANNEL TEMPERATURE: Tch(C) Resistance vs. Channel Temperature 100000 10 1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 0.1 10000 Ciss 1000 100 10 1 0.01 1 1.5 SOURCE-DRAIN VOLTAGE : VSD(V) Fig.8 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 Coss Crss Ta= 25C f= 1MHz VGS= 0V 0.01 0.5 DRAIN CURRENT : ID(A) www.rohm.com 100 Fig.6 Static Drain-Source On-State Fig.7 Forward Transfer Admittance vs. Drain Current c 2009 ROHM Co., Ltd. All rights reserved. 50 Fig.3 Gate Threshold Voltage vs. Channel Temperature VGS= 0V Pulsed 0 0 CHANNEL TEMPERATURE: Tch (C) 15 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 0.1 VDS= 10V ID= 1mA 4 0.5 Ta=25C Pulsed 0.6 100 REVERSE DRAIN CURRENT : IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( ) 6.0 0.8 VGS= 10V Pulsed 1 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 4.5 5 Fig.2 Typical Transfer Characteristics Fig.1 Maximum Safe Operating Aera 100 3.0 6 GATE-SOURCE VOLTAGE : VGS(V) DRAIN-SOURCE VOLTAGE : VDS( V ) 10 1.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( ) 1 10 CAPACITANCE : C (pF) DRAIN CURRENT : ID(A) VDS= 10V Pulsed 0.1 1 10 100 1000 1000 0 DRAIN-SOURCE VOLTAGE : VDS(V) Fig.9 Typical Capacitance vs. Drain-Source Voltage 2009.06 - Rev.A Data Sheet 5 Ta= 25C VDD= 300V ID= 20A RG= 10 Pulsed 0 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 0 10 20 30 40 1000 10000 tf SWITCHING TIME : t (ns) 10 REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V) R6020ANJ 100 Ta= 25C di / dt= 100A / s VGS= 0V Pulsed 1000 td(off) 100 0.1 60 1 10 td(on) 10 tr 1 10 50 Ta= 25C RG= 10 VGS= 10V Pulsed VDD= 300V 0.01 100 0.1 1 10 TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) DRAIN CURRENT : ID (A) Fig.10 Dynamic Input Characteristics Fig.11 Reverse Recovery Time vs.Reverse Drain Current Fig.12 Switching Characteristics 100 10 1 Ta = 25C Single Pulse : 1Unit Rthch-at= txRthch-a Rthch-a= 62.5C/W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width zMeasurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching waveforms Fig.1-1 Switching time measurement circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate charge waveform 4/5 2009.06 - Rev.A R6020ANJ VGS Data Sheet IAS VDS VD(BR)DSS D.U.T. L IAS RG VDD EAS = www.rohm.com 2 L IAS VD(BR)DSS VD(BR)DSS - VDD Fig.3-2 Avalanche waveform Fig.3-1 Avalanche Measurement circuit c 2009 ROHM Co., Ltd. All rights reserved. 1 2 5/5 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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