1/5
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A
10V Drive Nch MOSFET
R6020ANJ
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zPackaging specifications
<LPTS>
Package
Code
Basic ordering unit (pieces)
TL
1000
Taping
R6020ANJ
Type
<LPTL>
Package
Code
Basic ordering unit (pieces)
TLL
1000
Taping
R6020ANJ
Type
zAbsolute maximum ratings (Ta=25°C) zInner circuit
Parameter
Range of storage temperature
Channel temperature
Total power dissipation (Tc=25°C)
Drain current
Gate-source voltage
Drain-source voltage VDSS
VGSS
PD
Tch
600 V
V
A
W
°C
±30
±20
ID
IDP
Continuous
Pulsed A
±80
100
150
Tstg °C
−55 to +150
Avalanche Energy
Avalanche Current IAS 10
EAS 26.7
Symbol Limits Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
DD
=50V, R
G
=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
∗1
∗3
∗3
ISA
ISP A
A
mJ
Continuous
Pulsed
20
80
Source current
(Body Diode)
∗1
∗2
∗2
zThermal resistance
Parameter
°C/W
Rth(ch-c)
Symbol Limits Unit
C
hannel to case 1.25
∗1 Body Diode
(1) Gate
(2) Drain
(3) Source
∗1
(1) (2) (3)
Each lead has same dimensions
LPTS
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
10.1 4.5
13.1
9.0
3.0
0.78
2.54
5.08
1.24
0.4
1.0
1.2
1.3
2.7
(1) (2) (3)
(1) (2) (3)
8.9
Each lead has same dimensions
LPTL
4.8
2/5
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A
Data Sheet R6020ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
C
iss
| Y
fs
|
C
oss
C
rss
Min.
−
600
−
2.5
−
−
7
−
−
−
−
−
−
0.19
2040
−
1660
70
±100
−
100
4.5
0.25
−
−
−
−
nA V
GS
=±30V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=600V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=10A, V
GS
=10V
V
DS
=25V
I
D
=10A, V
DS
=10V
V
GS
=0V
f=1MHz
V
µA
V
Ω
pF
S
pF
pF
t
d(on)
−40 −ns
t
r
−60 −V
GS
=10Vns
t
d(off)
−230 −R
L
=30Ωns
t
f
−70 −R
G
=10Ωns
Q
g
−65 −V
DD
300V
I
D
=20A
V
GS
=10V
R
L
=15Ω / R
G
=10Ω
nC
Q
gd
−25 −nC
Typ. Max. Unit Conditions
I
D
=10A, V
DD
300V
∗ Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
Q
gs
−10 −nC
∗
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−1.5 V I
S
=10A, V
GS
=0VForward voltage
∗ Pulsed
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
3/5
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A
Data Sheet R6020ANJ
zElectrical characteristics curves
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100
V
GS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.001
0.01
0.1
1
10
100
0.0 1.5 3.0 4.5 6.0
V
DS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.01
0.1
1
10
100
0 0.5 1 1.5
V
GS
= 0V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Fig.8 Reverse Drain Current vs.
Sourse-Drain Voltage
0
0.2
0.4
0.6
0.8
0 5 10 15
Ta=25°C
Pulsed
I
D
= 10.0A I
D
= 20.0A
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
= 10V
Pulsed
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
Fig.7 Forward Transfer Admittance
vs. Drain Current
1
10
100
1000
10000
100000
0.01 0.1 1 10 100 1000 1000
0
C
iss
C
oss
C
rss
Ta= 25°C
f= 1MHz
V
GS
= 0V
Fig.9 Typical Capacitance vs.
Drain-Source Voltage
0.01
0.1
1
10
100
0.1 1 10 100 1000
Tc = 25°C
Single Pulse DC operation
Pw=100u
Pw=1m
Operation in this
area is limited
by R
DS(ON)
P
W
=10m
0
0.1
0.2
0.3
0.4
0.5
-50 0 50 100 150
V
GS
= 10V
Pulsed
I
D
= 10.0A
I
D
= 20.0A
0
1
2
3
4
5
6
-50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
Fig.1 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE : V
DS
( V )
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
( )
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
( )
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
( )
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
CHANNEL TEMPERATURE: T
ch
(°C)
GATE THRESHOLD VOLTAGE: V
GS(th)
(V)
Fig.2 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate Source
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.6 Static Drain-Source On-State
Resistance vs. Channel Temperature
CHANNEL TEMPERATURE: T
ch
(°C)
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C (pF)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
REVERSE DRAIN CURRENT : I
DR
(A)
4/5
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A
Data Sheet R6020ANJ
0.0001
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 62.5°C/W
10
100
1000
0.1 1 10 100
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
Fig.11 Reverse Recovery Time
vs.Reverse Drain Current
0
5
10
0 102030405060
Ta= 25°C
V
DD
= 300V
I
D
= 20A
R
G
= 10
Pulsed
Fig.10 Dynamic Input Characteristics
1
10
100
1000
10000
0.01 0.1 1 10 100
t
f
t
d(off)
Ta= 25°C
V
DD
= 300V
V
GS
= 10V R
G
= 10
Ω
Pulsed
t
r
t
d(on)
Fig.12 Switching Characteristics 
Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width
TOTAL GATE CHARGE : Q
g
(nC)
GATE-SOURCE VOLTAGE : V
GS
(V)
REVERSE DRAIN CURRENT : I
DR
(A)
REVERSE RECOVERY TIME: t
rr
(ns)
DRAIN CURRENT : I
D
(A)
SWITCHING TIME : t (ns)
PULSE WIDTH : Pw(s)
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
zMeasurement circuits
F
ig.1-1 Switching time measurement circu
it
V
GS
R
G
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.1-2 Switching waveforms
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
F
ig.2-1 Gate charge measurement circuit
V
GS
I
G(Const.)
R
G
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.2-2 Gate charge waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
5/5
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A
Data Sheet R6020ANJ
Fig.3-1 Avalanche Measurement circuit
V
GS
R
G
V
D
S
D.U.T.
I
AS
L
Fig.3-2 Avalanche waveform
I
AS
V
DD
V
D(BR)DS
S
I
AS
2
L
E
AS
=V
D(BR)DSS
-
V
DD
V
D(BR)DSS
1
2
R0039
A
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© 2009 ROHM Co., Ltd. All rights reserved.
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