2KBPxxM-E4, 3N25x-E4
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Revision: 05-Aug-15 1Document Number: 88532
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Glass Passivated Single-Phase Bridge Rectifier
FEATURES
UL recognition file number E54214
Ideal for printed circuit board
High surge current capability
High case dielectric strength
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package KBPM
IF(AV) 2.0 A
VRRM 50 V to 1000 V
IFSM 60 A
IR5 μA
VF at IF = 3.14 A 1.1 V
TJ max. 165 °C
Diode variations In-line
+~~−
Case Style KBPM
+
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Maximum repetitive peak reverse
voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward output
rectified current at TA = 55 °C IF(AV) 2.0 A
Peak forward surge current single half
sine-wave superimposed on rated
load
IFSM 60 A
Rating for fusing (t < 8.3 ms) I2t15A
2s
Operating junction and storage
temperature range TJ, TSTG -55 to +165 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL TEST
CONDITIONS
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Maximum instantaneous
forward voltage drop per
diode
VF3.14 A 1.1 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
IR
TA = 25 °C 5.0
μA
TA = 125 °C 500
Typical junction
capacitance per diode TJ4.0 V,
1 MHz 25 pF
2KBPxxM-E4, 3N25x-E4
www.vishay.com Vishay General Semiconductor
Revision: 05-Aug-15 2Document Number: 88532
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent
Per Diode
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Typical thermal resistance RJA (1) 30 °C/W
RJL (1) 11
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
2KBP06M-E4/51 1.895 51 600 Anti-static PVC tray
3N257-E4/51 1.895 51 600 Anti-static PVC tray
20 40 60 80 100 120 140 160170
0
0.5
1.0
1.5
2.0
Capacitive Load
5.0
10
20
=
I(pk)
I(AV)
(Per Leg)
PCB Mounted
with 0.47 x 0.47"
(12 x 12 mm)
Copper Pads
60 Hz Resistive or
Inductive Load
Ambient Temperature (°C)
Average Forward Output Current (A)
110 100
0
10
20
30
40
50
60
T
J
= 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
00.2 0.4 0.6 0.8 1.0 1.2 1.4
0.01
0.1
1
10
100
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 40 60 80 100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
2KBPxxM-E4, 3N25x-E4
www.vishay.com Vishay General Semiconductor
Revision: 05-Aug-15 3Document Number: 88532
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028 (0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM
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Revision: 08-Feb-17 1Document Number: 91000
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