DMP3098LSD
DUAL P-CHANNEL ENHANCEMENT MODE MOS FET
Features
• Dual P-Channel MOSFET
• Low On-Resistance
• 65mΩ @ VGS = -10V
• 115mΩ @ VGS = -4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072g (approximate)
UCT NEW PROD
D
2
S
2
G
2
D
1
S
1
G
1
P-Channel MOSFET P-Channel MOSFET
SOP-8L
S1
D2
S2
D1
G2
G1 D1
D2
TOP VIEW Internal Schematic
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±20 V
Drain Current (Note 1) Steady
State TA = 25°C
TA = 70°C ID -4.4
-3.3 A
Pulsed Drain Current (Note 3) IDM -15 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1) PD 1.8 W
Thermal Resistance, Junction to Ambient (Note 1) RθJA 70 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP3098LSD
Document number: DS31448 Rev. 3 - 2 1 of 4
www.diodes.com October 2008
© Diodes Incorporated
DMP3098LSD
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) -1 1.7 -2.1 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) ⎯
⎯ 56
98 65
115 mΩ VGS = -10V, ID = -5.0A
VGS = -4.5V, ID = -4.0A
Forward Transconductance gfs ⎯ 5.2 ⎯ S VDS = -10V, ID = -5.0A
Diode Forward Voltage (Note 5) VSD -0.5 ⎯ -1.2 V
VGS = 0V, IS = -2.6A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 336 ⎯ pF
Output Capacitance Coss ⎯ 70 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 49 ⎯ pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Gate Resistance RG ⎯ 4.6 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Qg ⎯ 4.0
7.8 ⎯ VDS = -15V, VGS = -4.5V,ID = -5.0A
VDS = -15V, VGS = -10V,ID = -5.0A
Gate-Source Charge Qgs ⎯ 1.0 ⎯ VDS = -15V, VGS = -4.5V,ID = -5.0A
Gate-Drain Charge Qgd ⎯ 2.5 ⎯
nC
VDS = -15V, VGS = -4.5V,ID = -5.0A
Turn-On Delay Time td(on) ⎯ 6.0 ⎯
Rise Time tr ⎯ 5.0 ⎯
Turn-Off Delay Time td(off) ⎯ 17.6 ⎯
Fall Time tf ⎯ 9.5 ⎯
ns VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0Ω
NEW PRODUCT
Notes: 5. Short duration pulse test used to minimize self-heating effect.
-I , DRAIN CURRENT (A)
D
Fig . 1 Typica l Out put Ch ar acteristics
-V , DRAIN- SOURCE VOLTAGE (V)
DS
0
4
8
12
16
20
012345
V = -2.5V
GS
V = -4.5V
GS
V = -10V
GS
V = -1.5V
GS
V = -3.0V
GS
Fig. 2 Typical Transfer Characteristics
-V , GA TE SOURCE VOLTAGE (V)
GS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
4
8
12
16
20
123456
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
DMP3098LSD
Document number: DS31448 Rev. 3 - 2 2 of 4
www.diodes.com October 2008
© Diodes Incorporated
DMP3098LSD
0.01
0.1
1
048121620
R
, S
T
A
T
I
C
D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
Fig. 3 Ty pi cal On -R esista nce
vs . Dr ain Current and G at e Volta ge
-I , DRAIN CURRENT (A)
D
V = -4.5V
GS
V = -10V
GS
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0246810
R
, S
T
A
T
I
C
D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(ON)
Ω
Fig. 4 Typical On-Resistance
vs . Dr ain C urr ent and Temp e r atur e
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
R , STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = -4.5V
I = -4.2A
GS
D
V = -10V
I = -5.3A
GS
D
10
100
1,000
0 5 10 15 20 25 30
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
Fig. 6 T y pical Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C
iss
C
oss
C
rss
0.8
1.2
1.6
2.0
2.4
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
Fig. 7 Gate Threshold V ariation vs. Ambient Temperature
T , AMBIENT TEMPERAT URE (°C)
A
-50 -25 0 25 50 75 100 125 150
I = -250µA
D
0
2
4
6
8
10
0.4 0.6 0.8 1 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
Fi g. 8 Diode For w a r d Voltage vs . Cur r ent
T = 25°C
A
NEW PRODUCT
DMP3098LSD
Document number: DS31448 Rev. 3 - 2 3 of 4
www.diodes.com October 2008
© Diodes Incorporated
DMP3098LSD
Ordering Information (Note 6)
Part Number Case Packaging
DMP3098LSD-13 SOP-8L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NEW PRODUCT
Top View
Logo
Part no.
Year: "07" =2007
"08" =2008
Xth w eek: 01~52
1 4
8 5
P3098LD
YY WW
Package Outline Dimensions
DMP3098LSD
Document number: DS31448 Rev. 3 - 2 4 of 4
www.diodes.com October 2008
© Diodes Incorporated
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SOP-8L
Dim Min Max
A - 1.75
A1 0.08 0.25
A2 1.30 1.50
A3 0.20 Typ.
b 0.3 0.5
D 4.80 5.30
E 5.79 6.20
E1 3.70 4.10
e 1.27 Typ.
h - 0.35
L 0.38 1.27
θ 0° 8°
All Dimensions in mm
GAUGE PLAN E
SEATING PLAN E
DETAIL A
DETAIL A
E
E1
h
L
D
eb
A2
A1
A
45
°
7
°~
9
°
A3
0.254
X
C1
C2
Y
Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
