BOE D M@ 9970578 0007419 72] MZETB ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN2106 FEATURES Compact geometry Fast switching speeds No secondary breakdown Excellent temperature stability High input impedance Low current drive Ease of paralleling DESCRIPTION A compact interdigitated geometry forms the basis of this Zetex MOSFET. Optimised for low on-resistance, low capacitance and fast switching, this device is manufactured using the latest computer controlled processing techniques in order to achieve greater stability, reliability and ruggedness. PRODUCT SUMMARY Part No. BVoss Ip Rosion} ZVN2106A* 60V 0.45A 22 ZVN2106B* 60V 1.2A 22 ZVN2106E 60V 0.45A 22 ZVN2106G 60V 0.74 20 *BS-CECC approved 4 E-LINE (TO-92) SUFFIX A & TO-39 SUFFIX B 14 LEAD MOULDED DIL SUFFIX E \ AS SOT-223 SUFFIX G F-117LOE D MM 9970578 0007820 443 MZETB ZVN2106 ZETEX SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS Parameters E-line | TO-39 DIL |SOT223) Units Vos Drain-source voltage 60 60 60 60 Vv lp Continuous drain current (@ T, =25C) 0.45 | 0.45 | 0.45 0.7 A Ip Continuous drain current (@ Tp =25C) _ 1.2 - - A lom Pulsed drain current 8 8 3 A Ves Gate-source voltage +20 +20 +20 +20 Vv Pp Max. power dissipation (@ T, =25C) 0.7 0.7 0.85 WwW Pp Max. power dissipation (@ Tc =25C) 5 - - WwW T;, Tstg Operating/storage temperature range -65 to +150 C ELECTRICAL CHARACTERISTICS (at T= 25C unless otherwise stated) Parameter Min. | Typ. | Max. } Unit Conditions BVpss_ _Drain-source breakdown 60 - - Vj} Ip=IMA, Veg = OV voltage Vesitn Gate-source threshold 08] - 2.4 | Vi {| Ip=1mMA, Vos = Ves voltage loss Gate body leakage - | 0.1 20 | nA | Veg= +20V, Vpg=0V loss Zero gate voltage drain - ~ 0.5 | wA | Vos =Max. rating, Veg =OV current - - 0.1 | MA | Vpg=0.8 x Max. rating Ves =OV (T=125C) (2) lpton) On-state drain current (1) 2 3 - A | Vog= 18V, Veg = 10V Rosion} Static drain-source on-state _ - 2 Q | Ip=1A, Veg =10V resistance (1) Sts Forward transconductance 0.3 | 0.4 - S | Vps = 18V, Ip=1A (1) (2) Ciss Input capacitance (2) - 60 75 pF Cc. Common source output - 30 45 pF = = ose capacitance (2) 105 MH Vos=0V Criss ors? transfer capacitance | ~ 15 20 | pF taion) Turn-on delay time (2) (3) - 4 7 ns t, Rise time (2) (3) - 5 8 ns Von = 18V, Ip=1A tatott) Turn-off delay time (2) (3) - 8 12 | ns ty Fall time (2) (3) - 10 15 ns F-118bOE D @@ 9970578 0007821 38T MBZETB ZETEX SEMICONDUCTORS 2VN2106 SOURCE-DRAIN DIODE CHARACTERISTICS Parameter Typ. Unit Conditions Vso Diode forward voltage (1) 0.82 Vv Ves =OV, Ig=0.45A te Reverse recovery time 50 ns Ves = OV, Ip =0.45A Ip=O0.1A (1) Measured under pulsed conditions. Width = 300us. Duty cycle <2%. (2) Sample test. (3) Switching times measured with 500 source impedance and <5ns rise time on a pulse generator. Ipjon) ON-STATE DRAIN CURRENT (AMPS) 1 3 4 Vpg - DRAIN-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical saturation characteristics los wa OSA Yps~- ORAIN-SOURCE VOLTAGE (VOLTS) O25A 4 Vgg - GATE-SOURCE VOLTAGE {vOLTS) Fig. 2 Typical voltage saturation characteristics F-119BOE D Mm 9970574 OO0?8ee 216 MZETB ZVN2106 ZETEX SEMICONDUCTORS IQ(ON) - ON-STATE DRAIN CURRENT (AMPS) 2 4 Vos - GATE-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical transfer characteristics Rosion) ORAIN-SOURCE ON-RESISTANCE (OHMS) a 4 3 Nos GATE-SOQURCE VOLTAGE (WOLTS) Fig. 4 Typical on-resistance v gate-source voltage F-120bOE D M@@ 9970578 0007823 152 MBZETB Fig. 5 Normalised Rosjon) aNd Vesin) temperature ZETEX SEMICONDUCTORS ZVN2106 30 6933 28 26 2-4 = 22 & 20 Vgg = 10V o V4 - s ~ Ip =1A Od 9 18 RP < & = ef 5 16 wT o S D v4 OL) a cA . oi oO 12 _ Zz 10 > RUE TRS =z 5 08 a olrAGe vy 4 zrY? LT TH)) 0-6 Ip = mA Vos =Ycs O4 02 -100 -80 -60 -40 -20 0 20 40 60 80 00 120 140 160 180 __ TEMPERATURE (C) F-121BOE D mm 9970578 O0078e4 O99 MBZETB 2VN2106 ZETEX SEMICONDUCTORS Gt ~FORWARD TRANSCONOUCTANCE (MHOS) 1 Ty (an) GRAIN CURRENT (AMPS) Fig. 6 Typical transconductance v drain current ts FORWARD TRANSCONDUCTANCE (MHOS) Qo 2 4 6 8 10 Ygs ~ GATE-SOURCE VOLTAGE (VOLTS) Fig. 7 Typical transconductance v gate-source voltage F-122bOE D mm 9970578 00074825 Te5 MEZETB ZETEX SEMICONDUCTORS ZVN2106 Ciss CAPACITANCE (pF) Coss Crss 20 x 40 50 Vos - ORAIN-SOURCE VOLTAGE (VOLTS) Fig. 8 Typical capacitance v drain-source voltage Vgg ~GATE-SOURCE VOLTAGE (VOLTS) 0 Os: 10 16 20 25 Q GATE CHARGE (nC) Fig. 9 Typical gate charge v gate-source voltage F-123LOE D MM 9970578 0007826 4b) MMZETB ZVN2106 ZETEX SEMICONDUCTORS $OT223 DIL Pp = POWER DISSIPATION (WATTS) E-LINE/TO39 20 40 60 80 100 120 140 160 Ta-AMBIENT TEMPERATURE (C) 4/DERATING/ 8/86 Fig. 10 Power v temperature derating curve (ambient) Pp ~POWER DISSIPATION (WATTS) 20 40 60 80 100 120 140 160 Te- CASE TEMPERATURE (C) 1 DERATING/8/86 Fig. 11 Power v temperature derating curve (case) F-124