PD -97680 AUIRF1404S AUIRF1404L AUTOMOTIVE GRADE Features HEXFET(R) Power MOSFET Advanced Planar Technology Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S VDSS 40V RDS(on) typ. max. ID (Silicon Limited) 3.5m 4.0m 162A ID (Package Limited) 75A h Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. S D S D G D2Pak AUIRF1404S TO-262 AUIRF1404L G G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR Parameter ci Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) c ei dv/dt TJ TSTG i i Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) di c Max. Units h h 162 115 75 650 3.8 200 1.3 20 519 95 20 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 Thermal Resistance Symbol RJC RJA Parameter k Junction-to-Case Junction-to-Ambient (PCB Mounted, steady-state) j Typ. Max. Units --- --- 0.75 40 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 06/07/11 AUIRF1404S/L Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 40 --- --- 2.0 106 --- --- --- --- --- 0.036 3.5 --- --- --- --- --- --- --- --- 4.0 4.0 --- 20 250 200 -200 V V/C m V S A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 95A VDS = VGS, ID = 250A VDS = 25V, ID = 60A VDS = 40V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V f i Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LS Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance --- --- --- --- --- --- --- --- 160 35 42 17 140 72 26 7.5 200 --- 60 --- --- --- --- --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance (Time Related) --- --- --- --- --- --- 7360 1680 240 6630 1490 1540 --- --- --- --- --- --- nC ns nH pF ID = 95A VDS = 32V VGS = 10V VDD = 20V ID = 95A RG = 2.5 RD = 0.21 fi fi Between lead, and center of die contact VGS = 0V VDS = 25V = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V i Diode Characteristics Symbol IS Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM d VSD trr Qrr ton Conditions Min. Typ. Max. Units --- --- --- --- 162 h 650 A A MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 95A, VGS = 0V TJ = 25C, IF = 95A di/dt = 100A/s D f S --- --- 1.3 V --- 71 110 ns --- 180 270 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) fi Notes: Repetitive rating; pulse width limited by Calculated continuous current based on maximum allowable Starting TJ = 25C, L = 0.12mH Use IRF1404 data and test conditions. max. junction temperature. (See fig. 11) RG = 25, IAS = 95A. (See Figure 12) ISD 95A, di/dt 150A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2 junction temperature. Package limitation current is 75A. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. www.irf.com AUIRF1404S/L Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level ESD Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2Pak MSL1 TO-262 N/A Machine Model Class M4 (+/- 425V) AEC-Q101-002 Human Body Model Class H2 (+/- 4000V) AEC-Q101-001 Charged Device Model Class C5 (+/- 1125V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRF1404S/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 4.5V 100 100 4.5V 20s PULSE WIDTH TJ = 25 C 10 0.1 1 10 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 100 V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 4.0 20s PULSE WIDTH TJ = 175 C 9.0 ID = 159A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRF1404S/L VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 10000 Ciss 8000 6000 4000 Coss 2000 20 VGS , Gate-to-Source Voltage (V) 12000 1 10 12 8 4 0 100 VDS , Drain-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 240 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 1000 ID , Drain Current (A) ISD , Reverse Drain Current (A) VDS = 32V VDS = 20V 16 Crss 0 ID = 95A 100 10us 100us 100 TJ = 25 C 10 1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.4 1ms 10ms 10 1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF1404S/L RD V DS 200 VGS LIMITED BY PACKAGE 160 ID , Drain Current (A) D.U.T. RG + - V DD 10V 120 Pulse Width 1 s Duty Factor 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 0 25 50 75 100 125 150 175 90% TC , Case Temperature ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF1404S/L 15V D.U.T RG + - VDD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) DRIVER L VDS 1200 1000 A ID 39A 67A 95A TOP BOTTOM 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 50 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V V DSav , Avalanche Voltage ( V ) VG 48 46 44 42 .2F .3F D.U.T. + V - DS 40 0 20 40 60 80 100 IAV , Avalanche Current ( A) VGS 3mA IG ID Current Sampling Resistors Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF1404S/L Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET(R) Power MOSFETs 8 www.irf.com AUIRF1404S/L D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF1404S YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRF1404S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF1404L YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF1404S/L D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF1404S/L Ordering Information Base part number Package Type AUIRF1404S D2Pak AUIRF1404L TO-262 12 Standard Pack Form Tube Tape and Reel Left Tape and Reel Right Tube Complete Part Number Quantity 50 800 800 50 AUIRF1404S AUIRF1404STRL AUIRF1404STRR AUIRF1404L www.irf.com AUIRF1404S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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