Rev.4.00 May 15, 2006 page 1 of 7
2SK3228
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1094-0400
Rev.4.00
May 15, 2006
Features
• Low on-resistance
RDS (on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code:
PRSS0004AC-A
(Package name:
TO-220AB)
D
G
S
1. Gate
2. Drain
(Flange)
3. Source
123
2SK3228
Rev.4.00 May 15, 2006 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 80 V
Gate to source voltage VGSS ±20 V
Drain current ID 75 A
Drain peak current ID (pulse) Note 1 300 A
Body-drain diode reverse drain current IDR 75 A
Avalanche current IAP Note 3 50 A
Avalanche energy EAR Note 3 181 mJ
Channel dissipation Pch Note 2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch ≤ 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 80 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 80 V, VGS = 0
Gate to source cutoff voltage VGS (off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
RDS (on) — 6.0 7.5 mΩ I
D = 40 A, VGS = 10 V Note 4 Static drain to source on state resistance RDS (on) — 8.0 12 mΩ I
D = 40 A, VGS = 4 V Note 4
Forward transfer admittance |yfs| 55 90 — S ID = 40 A, VDS = 10 V Note 4
Input capacitance Ciss — 9700 — pF
Output capacitance Coss — 1250 — pF
Reverse transfer capacitance Crss — 290 — pF
ID = 10 V
VGS = 0
f = 1 MHz
Total gate charge Qg — 150 — nC
Gate to source charge Qgs — 30 — nC
Gate to drain charge Qgd — 30 — nC
VDD = 25 V
VGS = 25 V
ID = 75 A
Turn-on delay time td (on) — 80 — ns
Rise time tr — 300 — ns
Turn-off delay time td (off) — 770 — ns
Fall time tf — 370 — ns
ID = 10 A
VGS = 40 V
RL = 0.75 Ω
Body-drain diode forward voltage VDF — 1.05 — V IF = 75 A, VGS = 0
Body-drain diode reverse recovery time trr — 90 — ns IF = 75 A, VGS = 0
diF/dt = 50 A/µs
Note: 4. Pulse test
2SK3228
Rev.4.00 May 15, 2006 page 3 of 7
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
200
150
0
50
100
0 50 100 200
150
1000
300
100
10
1
30
3
0.3
0.1
0.1 0.3 1 3 10 30 100
100
0
20
40
60
80
0246810
3.5 V
3.7 V
V
GS
= 3 V
4 V
100
0
20
40
60
80
012345
Operation in
this area is
limited by R
DS (on)
Pulse Test V
DS
= 10 V
Pulse Test
Ta = 25°C
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS (on)
(mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
0
0.1
0.2
0.3
0.4
048121620
20 A
10 A
I
D
= 50 A
1 2 5 10 20 50 200
100
100
50
20
5
10
2
1
10 V
V
GS
= 4 V
Pulse Test Pulse Test
10 µs
1 ms
PW = 10 ms (1 Shot)
DC Operation (Tc = 25°C)
100 µs
5 V
–25°C
10 V
Tc = 75°C
25°C
2SK3228
Rev.4.00 May 15, 2006 page 4 of 7
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
20
16
4
8
12
–50 0 50 100 150 200
0
I
D
= 50 A
10, 20 A
10, 20, 50 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
5
10
0.5
1
2
25°C
75°C
Pulse Test V
DS
= 10 V
Pulse Test
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
0.1 0.3 1 3 10 30 100
1000
500
200
50
100
20
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
01020304050
30000
10000
3000
1000
300
100
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
100
0
20
40
60
80
0
20
80 160 240 320 400
0
4
8
12
16
V
GS
V
DS
I
D
= 75 A
1000
500
200
50
100
20
10
0.3 1 3 10 30 100
0.1
tf
tr
td(off)
td(on)
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
V
DD
= 50 V
25 V
10 V
V
DD
= 50 V
25 V
10 V
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty ≤ 1 %
Tc = –25°C
V
GS
= 4 V
10 V
2SK3228
Rev.4.00 May 15, 2006 page 5 of 7
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
200
25 50 75 100 125 150
0
40
80
120
160
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= 50 A
V
DD
= 25 V
duty < 0.1 %
Rg ≥ 50 Ω
100
0
20
40
60
80
0 0.4 0.8 1.2 1.6 2.0
Pulse Test
5 V
V
GS
= 0,
–5 V
10 V
2SK3228
Rev.4.00 May 15, 2006 page 6 of 7
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Vin Monitor
D.U.T.
Vin
10 V 50 Ω
R
L
Vout
Monitor
V
DD
= 30 V
2SK3228
Rev.4.00 May 15, 2006 page 7 of 7
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Previous Code
PRSS0004AC-A
TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code Unit: mm
Package Name
TO-220AB
Ordering Information
Part Name Quantity Shipping Container
2SK3228-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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