52
VTP Process Photodiodes VTP1232H
(Also available in infrared transmitting visible
blocking version)
PRODUCT DESCRIPTION
This photodiode features the largest detection
area available in a clear, endlooking T-1¾
pa ckage. Co mbin ed wit h exce lle nt da rk c ur ren t,
it can fulfill the demands of many difficult
applications.
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1¾
CHIP ACTIVE AREA: .0036 in
2
(2.326 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Ope rati ng Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTI C TEST CONDIT IONS VTP1232H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 100 µA
TC ISC ISC Temperature Coefficient 2850 K 0.20 %/°C
Re Responsivity 880 nm 0.06 0.076 A/(W/cm2)
VOC Open Circuit Voltage H = 100 2850 K .42 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 10 V 25 nA
CJJunction Capacitance H = 0, V = 0 V .18 .30 nF
λrange Spectral Applica tion Range 400 1100 nm
λpSpectral Response - Pea k 920 nm
SRSensitivity @ Peak 0.60 A/W
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
