BUCO ver :ce5 oc PRODUCT CATALOG 72 SoS BRSS He rE Bese SENG (IFT P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS -100V,-193A, 0.2192 PARAMETER | SYMBOL UNITS Drain-source Voit.(1) VDSS -100 Vde SDF 9140 JAA Drain-Gate Voltage (Res=1.0Ma) (1) VDGR - 100 Vde SDF 9140 JAB. Continuaus v6s +20 Vde SDF9140 JDA Drain Current Continuous (Te = 25C) 1D 713 Adc FEATURES Drain Current Pulseda(3) 10M -76 A : @ RUGGED PACKAGE rola! Power Dissipation PD 100 Ww @ HI-REL CONSTRUCTION ower Dissipation Derating > 25C 0.83 W/*C @ CERAMIC EYELETS: JAA, JAB @ LEAD BENDING OPTIONS TU/Ts i - + : Operating & Storage Temp. sig sS TO +150 . Cc @ COPPER CORED S2 ALLOY PINS Thermal Resistance Rthdec 1.2 C/W @ LOW IR LOSSES Max.Lead temperature T 300 c @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 ELECTRICAL CHARACTERISTICS Tc=a2sec (HYEESS.OTHERE, SCREENING (TX-S) PARAMETER __|SYMBOL| TEST CONDITIONS MINJTYP | MAX JUNITS} SCHEMATIC in- VGS=OV Fe Breakdown, Volt |YCBRIOSS iD=-250 pA Floop - | - | Vv (0) TERMINAL CONNECTIONS Gate Threshold =- i _ ve tage VGS(TH)|VDS*VGS_ [D=-250 pA 2.0] - |-4.0] v pe TTeaTe TT DRAIN ate Source = _ _ | Leakage IGSS_ |VGS*#20_ V 100] nA 2{DRAIN | 2] SOURCE Zero Gate VDS=MAX.RATING VGS=0| | |-250| HA (S) [3]Source [3] GATE Voltage Drain | IDSS [ypS=0.8 MAX.RATING STANDARD BEND Current VGS=0- TU=125C ~ | 7 71000) HA CONFIGURATIONS JAA Static Drain- i Source On-State ROS(ON) VGS=10 Vv - | - jo.2i1] Q JDA Resistance(1) ID=-10A F dT vOS 2 50 V Conductance (2) 9fs | 1pS=-10a 5.0] - | - |S(0) Input Capacitance! CISS - 1200) - pF S ; VGS20V vDS=-25 V = = " 3 Output Capacitance; COSS f=1.0 MHz S70 pF ! 2 Reverse Transfer CRSS Capacitance - |160] - pF Turn-On Delay {td(on)|vop=-sov Zoz4.70 | - | - | 30] ns Rise Time tr ID=-10A - | - [100] ns Turn-OFf Delayltd(off)| ure essentiarty mmsente-| = [= [100] ns Fall Time tf dent of operating tema.) [~~ |1oo| ns Total Gate Charge D Gate-Source Plus; Qg - - |30 ] nc 2 3 1 ue 2 ate-Drain) VGS=-15V. 1D*-19A Cheese Qgs (Gate charge is ensen} | - | 14] - | nc (CUSTOM BEND OPTIONS AVAILABLE) (af iter) agg [operating temperatures | _ sel | nc STANDARD BEND _ JAB SOURCE -DRAIN DIODE RATINGS & CHARACT.Tc= 25C ((MESS OTHER. PARAMETER SYMBOL} TEST CONDITIONS MIN | TYP.IMAX .JUNITS Continuous ig: Source Current] 1S |vmbol showmns the | ~ | - [729] A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | 1SM |fier (See schematic)| - | - |-76| A Diode) (1) Diode Forward IF=-1SA, VGS=0V ie Voltage (2) | VSO It 2.2506 4.2) V Reverse wsDGe _ Recovery Time tre |To=*25* C 170] - | ns Reverse Re- IFe- 1GA covery Charge | OPP |di/dt=100A/ us ~ 70.8) | pe (CUSTOM BEND OPTIONS AVAILABLE) 1) TJ = 25C to 150C. 2) Pulse test: Pulse Width <300nS, Duty Cycle <2s. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature. ASS