Preliminary SPF-2086T Product Description Stanford Microdevices' SPF-2086T is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates. This device is ideally biased at Vds=3V and Id=20mA for lowest noise performance and battery powered requirements. At 5V, 40mA the device delivers excellent IP3 of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications. Max Available Gain vs. Frequency 30 Product Features * High Gain: 20 dB at 1900 MHz * +20 dBm Output Power at P1dB * Low Noise Figure: 0.4 dB NF at 1900 MHz * Low Current Draw: 20 mA typ. at 3.0V 24 dB 0.1 GHz - 12 GHz Low Noise PHEMT GaAs FET 18 Applications * LNA for Cellular, PCS, CDPD * Wireless Data, SONET * Driver Stage for low power 12 6 0 0 2 4 6 8 10 12 applications Frequency GHz SYMBOL PARAMETERS TEST CONDITIONS: UNITS MIN. GHz 0.1 TYP. MAX. Z0 = 50 OHMS, T = 25C Bandw idth Note : Bandwidth determined by limited gain performance 12.0 P 1d B Output Power at 1dB Compression f = 1 GHz to 12 GHz VDS = 5V, ID= 40 mA VDS = 3V, ID= 20 mA dB m dB m 20.0 15.0 OIP3 Output Third Order Intercept Point f = 1 GHz to 12 GHz VDS = 5V, ID = 40 mA VDS = 3V, ID = 20 mA dB m dB m 32 28 Optimum Noise Figure f = 1 GHz f = 2 GHz f = 4 GHz f = 6 GHz VDS = 3V, ID = 20 mA dB dB dB dB 0.28 0.44 0.54 0.70 Associated Gain f = 1 GHz f = 2 GHz f = 4 GHz f = 6 GHz VDS = 3V, ID = 20 mA dB dB dB dB 23.1 17.8 13.9 12.2 IDSS Drain Saturation Current VDS = 2V, VGS = 0V mA VP Pinch - off Voltage VDS = 2V, IDS = 1mA V -1.0 GM Transconductance VDS = 2V, IDS = 20mA mmho 100 NFOPT GA 30 85 140 VBGS Gate to Source Breakdown Voltage V -17 -8 VBDS Drain to Source Breakdown Voltage V -17 -8 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101189 Rev. B Preliminary SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/TL Symbol Value Unit Drain-Source Voltage VDS +7 V Gate-Source Voltage VGS -7 V Drain Current IDS 85 mA Foward Gate Current IDSF 10 mA RF Input Power PIN +20 dB m Operating Temperature TOP -40 to +85 C Storage Temperature Range TS -65 to +150 C TCH +150 C TL 110 C/W PDISS 400 mW Channel Temperature Thermal Resistance (lead - junction) Power Dissipation Noise parameters, at typical operating frequencies Note: Measurements at higher frequencies are currently in development Bias Vds=3.0V, Ids=20mA FREQ GHZ |G G OPT| G OPT ANG NFMIN dB rN W GA dB 1.0 0.74 17 0.28 0.22 23.1 2.0 0.69 31 0.44 0.18 17.8 4.0 0.54 84 0.54 0.09 13.9 6.0 0.28 179 0.70 0.05 12.2 Bias Vds=5.0V, Ids=40mA FREQ GHZ |G G OPT| G OPT ANG NFMIN dB rN W GA dB 1.0 0.76 19 0.34 0.27 23.9 2.0 0.67 36 0.55 0.23 19.1 4.0 0.47 93 0.75 0.11 15.0 6.0 0.31 -170 1.04 0.06 12.9 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101189 Rev. B Preliminary SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET Scattering Parameters: Typical S-parameters Vds=3.0V, Ids=20 mA Freq GHz |S11| S11 Ang S 21 d B |S21| S21 Ang S 12 d B |S12| S12 Ang |S22| S22 Ang 0.05 0.98 -0.63 18.1 8.0 179.6 -36.6 0.01 128.4 0.65 -1.7 0.1 0.98 -2.8 17.5 7.5 177.6 -49.5 0.00 100.7 0.63 -1.9 0.5 0.97 -15.3 17.5 7.5 165.5 -38.5 0.01 85.6 0.62 -9.5 1.0 0.96 -29.8 17.3 7.3 152.0 -32.9 0.02 69.1 0.61 -18.9 1.5 0.93 -44.5 17.1 7.2 138.8 -29.7 0.03 62.1 0.59 -27.4 2.0 0.88 -60.8 17.0 7.0 124.7 -27.4 0.04 53.3 0.55 -37.3 2.5 0.82 -78.5 16.8 6.9 110.6 -25.6 0.05 43.0 0.51 -48.4 3.0 0.76 -95.9 16.3 6.6 97.1 -24.3 0.06 33.5 0.47 -58.4 3.5 0.71 -112.1 15.8 6.2 84.5 -23.6 0.07 26.0 0.45 -67.0 4.0 0.66 -125.6 15.3 5.8 73.4 -23.1 0.07 18.7 0.43 -73.6 4.5 0.62 -139.8 14.7 5.4 62.3 -22.6 0.07 11.8 0.40 -80.5 5.0 0.58 -155.6 14.1 5.1 51.0 -22.1 0.08 4.4 0.37 -89.0 5.5 0.56 -172.3 13.6 4.8 39.6 -21.9 0.08 -2.3 0.33 -100.2 6.0 0.55 170.3 12.9 4.4 28.7 -21.5 0.08 -9.3 0.30 -112.5 6.5 0.55 155.9 12.2 4.1 18.3 -21.6 0.08 -14.8 0.27 -124.9 7.0 0.55 143.2 11.6 3.8 8.6 -21.5 0.08 -19.9 0.26 -135.6 7.5 0.55 131.8 11.1 3.6 -0.5 -21.2 0.09 -25.7 0.24 -146.6 8.0 0.56 121.3 10.5 3.4 -9.8 -20.9 0.09 -30.5 0.23 -158.7 8.5 0.56 111.0 9.9 3.1 -18.2 -21.2 0.09 -34.1 0.22 -169.0 9.0 0.58 101.9 9.4 3.0 -26.8 -20.8 0.09 -38.7 0.23 179.1 9.5 0.59 94.5 8.9 2.8 -35.1 -20.7 0.09 -45.1 0.24 166.9 10.0 0.60 88.7 8.5 2.6 -43.2 -20.5 0.09 -48.3 0.25 155.7 10.5 0.59 83.2 8.1 2.5 -50.8 -20.3 0.10 -53.4 0.27 147.4 11.0 0.58 77.0 7.7 2.4 -58.7 -20.0 0.10 -58.3 0.29 139.2 11.5 0.59 70.0 7.3 2.3 -66.3 -20.0 0.10 -61.6 0.30 134.6 12.0 0.60 63.6 6.9 2.2 -73.6 -20.1 0.10 -68.4 0.30 129.7 Note : De-embedded to device pins 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101189 Rev. B Preliminary SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET Scattering Parameters: Typical S-parameters Vds=5.0V, Ids=40 mA Freq GHz |S11| S11 Ang S 21 d B |S21| S21 Ang S 12 d B |S12| S12 Ang |S22| S22 Ang 0.05 0.98 -1.86 19.65 9.60 179.14 -40.82 0.01 142.41 0.71 -1.49 0.1 0.98 -4.00 19.10 9.02 176.80 -36.44 0.02 61.47 0.69 -2.62 0.5 0.97 -18.55 18.96 8.87 161.63 -37.38 0.01 79.13 0.68 -9.34 1.0 0.91 -36.03 18.56 8.47 144.43 -32.60 0.02 71.00 0.67 -18.30 1.5 0.83 -53.20 18.07 8.00 128.44 -29.87 0.03 63.42 0.64 -26.15 2.0 0.73 -71.95 17.55 7.54 112.38 -27.40 0.04 54.26 0.59 -34.49 2.5 0.64 -92.56 16.96 7.05 97.04 -26.34 0.05 47.80 0.55 -43.18 3.0 0.55 -112.96 16.17 6.44 83.23 -25.06 0.06 41.17 0.50 -50.95 3.5 0.48 -132.70 15.36 5.86 70.22 -24.16 0.06 37.08 0.48 -57.59 4.0 0.43 -149.99 14.56 5.34 58.99 -23.47 0.07 32.76 0.46 -62.62 4.5 0.39 -168.89 13.80 4.90 47.91 -23.06 0.07 29.04 0.45 -67.90 5.0 0.37 170.67 13.08 4.51 36.91 -22.34 0.08 24.62 0.42 -74.58 5.5 0.39 151.15 12.40 4.17 26.18 -22.01 0.08 19.33 0.39 -83.97 6.0 0.43 133.82 11.66 3.83 15.61 -21.32 0.09 18.60 0.35 -94.51 6.5 0.47 120.89 10.95 3.53 5.92 -20.84 0.09 13.36 0.32 -106.08 7.0 0.50 109.89 10.32 3.28 -3.54 -20.30 0.10 9.52 0.30 -117.05 7.5 0.53 100.36 9.71 3.06 -12.65 -19.72 0.10 5.73 0.28 -128.64 8.0 0.57 91.25 9.16 2.87 -21.88 -19.26 0.11 2.09 0.26 -141.74 8.5 0.58 83.43 8.46 2.65 -29.75 -18.90 0.11 -0.23 0.25 -153.53 9.0 0.63 77.13 8.02 2.52 -38.37 -18.03 0.13 -4.45 0.26 -170.20 9.5 0.67 71.39 7.47 2.36 -47.01 -17.60 0.13 -9.47 0.27 172.54 10.0 0.69 66.40 6.96 2.23 -55.30 -17.07 0.14 -14.49 0.28 156.88 10.5 0.70 61.12 6.54 2.12 -63.20 -16.58 0.15 -19.18 0.31 144.39 11.0 0.71 55.86 6.07 2.01 -71.42 -16.38 0.15 -24.29 0.33 132.64 11.5 0.73 50.24 5.56 1.90 -79.06 -16.01 0.16 -29.38 0.35 123.63 12.0 0.75 45.32 5.02 1.78 -86.27 -15.60 0.17 -33.41 0.36 113.26 Note : De-embedded to device pins 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101189 Rev. B Preliminary SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part N umber R eel Siz e D evices/R eel SPF-2086T 7" 1000 Part Symbolization The part will be symbolized with a "P2T" designator on the top surface of the package. PCB Pad Layout Pin Designation P2T 1 Gate 2 Source 3 Drain 4 Source Package Dimensions P2T 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101189 Rev. B Preliminary SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET Component Tape and Reel Packaging Tape Dimensions For 86 Outline DESCRIPTION SYMBOL SIZE (MM) Length Width Socket Depth Pitch Bottom Hole diameter A B H K P D1 6.10 0.10 6.20 0.10 3.10 0.10 2.00 0.10 8.00 0.10 1.50 min. Perforation Diameter Pitch Position Do Po E 1.50 0.10 4.00 0.10 1.75 0.10 Cover Tape Width Tape Thickness C t 9.10 0.25 0.05 0.01 Carrier Tape Width Tape Thickness W T 12.00 0.30 0.30 0.05 F P2 5.50 0.05 2.00 0.05 Cavity Distance Cavity to Perforation (Width Direction) Cavity to Perforation (Length Direction) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101189 Rev. B