Preliminary
EDS-101189 Rev. B
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
1
SPF-2086T
0.1 GHz - 12 GHz Low Noise
PHEMT GaAs FET
Product Features
•High Gain: 20 dB at 1900 MHz
•+20 dBm Output Power at P1dB
•Low Noise Figure: 0.4 dB NF at
1900 MHz
•Low Current Draw: 20 mA typ. at 3.0V
Applications
• LNA for Cellular, PCS, CDPD
• Wireless Dat a, SONET
• Driver S t age for low power
applications
Frequency GHz
dB
Max Available Gain vs. Frequency
SYMBOL PARAMETERS TEST CONDITIONS:
Z
0
=05O
HMS
,T= C°52
UNITS MIN. TYP. MAX.
htdiwdnaB niagdetimilybdenimretedhtdiwdnaB:etoN ecnamrofrep zHG1.00.21
P
Bd1
noisserpmoCBd1tarewoPtuptuO zHG21otzHG1=f V
SD
I,V5=
D
Am04=
V
SD
I,V3=
D
Am02= mBd mBd 0.02 0.51
PIO
3
tnioPtpecretnIredrOdrihTtuptuO zHG21otzHG1=f V
SD
I,V5=
D
Am04=
V
SD
I,V3=
D
Am02= mBd mBd 2382
FN
TPO
erugiFesioNmumitpOzHG1=f zHG2=f zHG4=f zHG6=f
V
SD
I,V3=
D
Am02=
BdBdBdBd
82.0 44.0 45.0 07.0
G
A
niaGdetaicossAzHG1=f zHG2=f zHG4=f zHG6=f
V
SD
I,V3=
D
Am02=
BdBdBdBd
1.32 8.71 9.31 2.21
I
SSD
tnerruCnoitarutaSniarDV
SD
V,V2=
SG
V0=Am0358041
V
P
egatloVffo-hcniPV
SD
I,V2=
SD
Am1=V 0.1-
G
M
ecnatcudnocsnarTV
SD
I,V2=
SD
Am02=ohmm001
V
SGB
egatloVnwodkaerBecruoSotetaG V71-8-
V
SDB
egatloVnwodkaerBecruoSotniarD V71-8-
Stanford Microdevices’ SPF-2086T is a high performance
PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by
300 micron wide Schottky barrier gates.
This device is ideally biased at Vds=3V and Id=20mA for lowest
noise performance and battery powered requirements. At 5V,
40mA the device delivers excellent IP3 of 32 dBm. It provides
ideal performance as driver stages in many commercial,
industrial and military LNA applications.
0
6
12
18
24
30
024681012
Product Description
EDS-101189 Rev. B
Preliminary
2
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Preliminary
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/TL
Noise parameters, at typical operating frequencies
Note: Measurements at higher frequencies are currently in development
F
REQ
HG
Z
|GG
G
GG
OPT
|GG
G
GG
OPT
A
NG
FN
MIN
Bd r
N
WW
W
WW G
A
Bd
0.1 47.07182.022.01.32
0.2 96.01344.081.08.71
0.4 45.04845.090.09.31
0.6 82.097107.050.02.21
Bias Vds=3.0V, Ids=20mA
F
REQ
HG
Z
|GG
G
GG
OPT
|GG
G
GG
OPT
A
NG
FN
MIN
Bd r
N
WW
W
WW G
A
Bd
0.1 67.09143.072.09.32
0.2 76.06355.032.01.91
0.4 74.03957.011.00.51
0.6 13.0071-40.160.09.21
Bias Vds=5.0V, Ids=40mA
retemaraP lobmyS eulaV tinU
egatloVecruoS-niarDV
DS
7+V
egatloVecruoS-etaGV
GS
7-V
tnerruCniarDI
DS
58Am
tnerruCetaGdrawoFI
DSF
01Am
rewoPtupnIFRP
IN
02+mBd
erutarepmeTgnitarepOT
PO
58+ot04-C°
egnaRerutarepmeTegarotST
S
051+ot56-C°
erutarepmeTlennahCT
CH
051+C°
)noitcnuj-dael(ecnatsiseRlamrehTT
L
011W/C°
noitapissiDrewoPP
DISS
004Wm
EDS-101189 Rev. B
Preliminary
3
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Preliminary
Scattering Parameters:
zHGqerF |11S| gnA11S Bd12S |12S| gnA12S Bd21S |21S| gnA21S |22S| gnA22S
50.0 89.036.0-1.810.86.9716.63-10.04.82156.07.1-
1.0 89.08.2-5.715.76.7715.94-00.07.00136.09.1-
5.0 79.03.51-5.715.75.5615.83-10.06.5826.05.9-
0.1 69.08.92-3.713.70.2519.23-20.01.9616.09.81-
5.1 39.05.44-1.712.78.8317.92-30.01.2695.04.72-
0.2 88.08.06-0.710.77.4214.72-40.03.3555.03.73-
5.2 28.05.87-8.619.66.0116.52-50.00.3415.04.84-
0.3 67.09.59-3.616.61.793.42-60.05.3374.04.85-
5.3 17.01.211-8.512.65.486.32-70.00.6254.00.76-
0.4 66.06.521-3.518.54.371.32-70.07.8134.06.37-
5.4 26.08.931-7.414.53.266.22-70.08.1104.05.08-
0.5 85.06.551-1.411.50.151.22-80.04.473.00.98-
5.5 65.03.271-6.318.46.939.12-80.03.2-33.02.001-
0.6 55.03.0719.214.47.825.12-80.03.9-03.05.211-
5.6 55.09.5512.211.43.816.12-80.08.41-72.09.421-
0.7 55.02.3416.118.36.85.12-80.09.91-62.06.531-
5.7 55.08.1311.116.35.0-2.12-90.07.52-42.06.641-
0.8 65.03.1215.014.38.9-9.02-90.05.03-32.07.851-
5.8 65.00.1119.91.32.81-2.12-90.01.43-22.00.961-
0.9 85.09.1014.90.38.62-8.02-90.07.83-32.01.971
5.9 95.05.499.88.21.53-7.02-90.01.54-42.09.661
0.01 06.07.885.86.22.34-5.02-90.03.84-52.07.551
5.01 95.02.381.85.28.05-3.02-01.04.35-72.04.741
0.11 85.00.777.74.27.85-0.02-01.03.85-92.02.931
5.11 95.00.073.73.23.66-0.02-01.06.16-03.06.431
0.21 06.06.369.62.26.37-1.02-01.04.86-03.07.921
Typical S-parameters Vds=3.0V, Ids=20 mA
Note : De-embedded to device pins
EDS-101189 Rev. B
Preliminary
4
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Preliminary
Scattering Parameters:
zHGqerF |11S| gnA11S Bd12S |12S| gnA12S Bd21S |21S| gnA21S |22S| gnA22S
50.0 89.068.1-56.9106.941.97128.04-10.014.24117.094.1-
1.0 89.000.4-01.9120.908.67144.63-20.074.1696.026.2-
5.0 79.055.81-69.8178.836.16183.73-10.031.9786.043.9-
0.1 19.030.63-65.8174.834.44106.23-20.000.1776.003.81-
5.1 38.002.35-70.8100.844.82178.92-30.024.3646.051.62-
0.2 37.059.17-55.7145.783.21104.72-40.062.4595.094.43-
5.2 46.065.29-69.6150.740.7943.62-50.008.7455.081.34-
0.3 55.069.211-71.6144.632.3860.52-60.071.1405.059.05-
5.3 84.007.231-63.5168.522.0761.42-60.080.7384.095.75-
0.4 34.099.941-65.4143.599.8574.32-70.067.2364.026.26-
5.4 93.098.861-08.3109.419.7460.32-70.040.9254.009.76-
0.5 73.076.07180.3115.419.6343.22-80.026.4224.085.47-
5.5 93.051.15104.2171.481.6210.22-80.033.9193.079.38-
0.6 34.028.33166.1138.316.5123.12-90.006.8153.015.49-
5.6 74.098.02159.0135.329.548.02-90.063.3123.080.601-
0.7 05.098.90123.0182.345.3-03.02-01.025.903.050.711-
5.7 35.063.00117.960.356.21-27.91-01.037.582.046.821-
0.8 75.052.1961.978.288.12-62.91-11.090.262.047.141-
5.8 85.034.3864.856.257.92-09.81-11.032.0-52.035.351-
0.9 36.031.7720.825.273.83-30.81-31.054.4-62.002.071-
5.9 76.093.1774.763.210.74-06.71-31.074.9-72.045.271
0.01 96.004.6669.632.203.55-70.71-41.094.41-82.088.651
5.01 07.021.1645.621.202.36-85.61-51.081.91-13.093.441
0.11 17.068.5570.610.224.17-83.61-51.092.42-33.046.231
5.11 37.042.0565.509.160.97-10.61-61.083.92-53.036.321
0.21 57.023.5420.587.172.68-06.51-71.014.33-63.062.311
Typical S-parameters Vds=5.0V, Ids=40 mA
Note : De-embedded to device pins
EDS-101189 Rev. B
Preliminary
5
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Preliminary
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
rebmuNtraPeziSleeRleeR/seciveD
T6802-FPS"70001
PCB Pad Layout
niP noitangiseD
1etaG
2ecruoS
3niarD
4ecruoS
Package Dimensions
Part Symbolization
The part will be symbolized with a “P2T” designator
on the top surface of the package.
P2T
P2T
EDS-101189 Rev. B
Preliminary
6
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Preliminary
DESCRIPTION SYMBOL SIZE (MM)
ytivaC htgneL htdiW tekcoS htpeD hctiP retemaideloHmottoB
A
B
H
K
P
D
1
01.0±01.6 01.0±02.6 01.0±01.3 01.0±00.2 01.0±00.8 .nim05.1
noitarofreP retemaiD hctiP noitisoP
D
o
P
o
E
01.0±05.1 01.0±00.4 01.0±57.1
epaTrevoC htdiW ssenkcihTepaT C
t52.0±01.9 10.0±50.0
epaTreirraC htdiW ssenkcihTepaT W
T03.0±00.21 50.0±03.0
ecnatsiD )noitceriDhtdiW(noitarofrePotytivaC )noitceriDhtgneL(noitarofrePotytivaC F
P
2
50.0±05.5 50.0±00.2
Component Tape and Reel Packaging
Tape Dimensions
For 86 Outline
