TIP110-D - ON Semiconductor - Datasheet.Directory

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for general–purpose amplifier and low–speed

switching applications.

•High DC Current Gain —

hFE = 2500 (Typ) @ IC

= 1.0 Adc

•Collector–Emitter Sustaining Voltage — @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115

= 80 Vdc (Min) — TIP111, TIP116

= 100 Vdc (Min) — TIP112, TIP117

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.5 Vdc (Max) @ IC

= 2.0 Adc

•Monolithic Construction with Built–in Base–Emitter Shunt Resistors

•TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

TIP110,

TIP115

ÎÎÎ

TIP111,

TIP116

ÎÎÎÎ

TIP112,

TIP117

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

60

ÎÎÎ

80

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

60

ÎÎÎ

80

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

IC

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

2.0

4.0

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

IB

ÎÎÎÎÎÎÎÎÎ

50

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

50

0.4

ÎÎÎ

Î

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25C

Derate above 25C

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load Energy —

Figure 13

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

E

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

25

ÎÎÎ

Î

ÎÎÎ

mJ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

C

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristics

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

2.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 4 1Publication Order Number:

TIP110/D

TIP110

TIP111

TIP112

TIP115

TIP116

TIP117

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

50 WATTS

*ON Semiconductor Preferred Device

*

NPN

PNP

*

CASE 221A–09

TO–220AB

123

4

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

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2

00 20 40 60 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

40

20

60

140

TC

0

2.0

1.0

3.0

TA

TC

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

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3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

60

80

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP110, TIP115

(VCE = 40 Vdc, IB = 0) TIP111, TIP116

(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP110, TIP115

(VCB = 80 Vdc, IE = 0) TIP111, TIP116

(VCB = 100 Vdc, IE = 0) TIP112, TIP117

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

1000

500

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.8

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

25

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

200

100

ÎÎÎ

Î

ÎÎÎ

pF

(1) Pulse Test: Pulse Width  300 µs, Duty Cycle  2%.

Figure 2. Switching Times Test Circuit

4.0

0.04

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

2.0

1.0

0.8

0.2

0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

0.6

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+8.0 V

V1

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 µs

0

RB

51 D1

+4.0 V

VCC

-30 V

RC

TUT

≈ 8.0 k ≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25°C

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

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4

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZθJC(t) = r(t) RθJC

RθJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZθJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

1.0

Figure 5. TIP115, 116, 117

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

4.0

2.0

1.0

0.1

10 60 80 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

IC, COLLECTOR CURRENT (AMPS)

TJ = 150°Cdc

1ms

40

TIP115

TIP116

TIP117

SECONDARY BREAKDOWN LIMITED

5ms

CURVES APPLY BELOW

RATED VCEO

1.0

Figure 6. TIP110, 111, 112

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

4.0

2.0

1.0

0.1 10 80 100

IC, COLLECTOR CURRENT (AMPS)

60

TIP110

TIP111

TIP112

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

dc

ACTIVE–REGION SAFE–OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150C. TJ(pk) may be calculated from the data in

Figure 4. A t high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

C, CAPACITANCE (pF)

70

30

TC = 25°C

Cib

50

Cob

PNP

NPN

Figure 7. Capacitance

100

20

6.0 10 20

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

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5

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

6.0 k

0.04

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4

NPN

TIP110, 111, 112 PNP

TIP115, 116, 117

Figure 9. Collector Saturation Region

3.4

0.1

IB, BASE CURRENT (mA)

0.6

0.2 1.0 2.0 20 100

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0

2.2

0.04

IC, COLLECTOR CURRENT (AMP)

0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 3.0 V

4.0 k

3.0 k

TJ = 125°C

25°C

-55°C

50

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 125°C

25°C

-55°C

1.4

2.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

2.0

10

0.4

6.0 k

0.04

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

1.0 k

2.0 k

0.4

4.0 k

3.0 k

2.0

2.2

1.0

4.0 A

3.4

0.1

0.6

0.2 1.0 2.0 20 100

1.8

2.6

3.0

0.5 5.0 50

1.4

10

2.2

1.0

IC =

0.5 A 1.0 A 2.0 A 4.0 A

2.2

0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2 0.4

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

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6

Figure 11. Temperature Coefficients

NPN

TIP110, 111, 112 PNP

TIP115, 116, 117

Figure 12. Collector Cut-Off Region

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

0

-0.8

-1.6

-2.4

-3.2

-4.0

-4.8

*APPLIES FOR IC/IB ≤ hFE/3

*θVC for VCE(sat)

θVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

-55°C to 25°C

0.1

25°C to 150°C

-55°C to 25°C

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

0

-0.8

-1.6

-2.4

-3.2

-4.0

-4.8

*APPLIES FOR IC/IB ≤ hFE/3

*θVC for VCE(sat)

θVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

-55°C to 25°C

0.1

25°C to 150°C

-55°C to 25°C

105

-0.6

103

102

100

104

101

10-1

VBE, BASEEMITTER VOLTAGE (VOLTS)

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT (A)µIC

105

-0.6

103

102

100

104

101

10-1

VBE, BASEEMITTER VOLTAGE (VOLTS)

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT (A)µIC

Figure 13. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.71 A,

NPN test shown; for PNP test

reverse all polarity and use MJE224 driver.

0.71 A

0 V

-5 V

tw ≈ 3.5 ms (SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

20 V

100 ms

VCE(sat)

INPUT MJE254

50 Ω

RBB1

2kΩ

RBB2

100 Ω

VBB2 = 0

TUT

VCE MONITOR

100 mH

VCC = 20 V

IC

MONITOR

RS =

0.1 Ω

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS

+

-

VBB1 = 10 V +

-

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

http://onsemi.com

7

PACKAGE DIMENSIONS

CASE 221A–09

ISSUE AA

TO–220AB

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

–T–

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

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8

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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

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For additional information, please contact your local

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TIP110/D

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