BFR340L3 NPN Silicon RF Transistor* * Low voltage/ Low current operation * Transition frequency of 14 GHz 3 1 * High insertion gain 2 * Ideal for low current amplifiers and oscillators * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR340L3 Marking FA Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 10 Base current IB 2 Total power dissipation1) Ptot 60 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 120C Thermal Resistance Parameter Symbol Junction - soldering point 2) RthJS Value Unit tbd K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 2005-10-11 BFR340L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 1 A hFE 90 120 160 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 5 mA, VCE = 3 V, pulse measured 2 2005-10-11 BFR340L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 10 14 - GHz Ccb - 0.17 0.4 Cce - 0.13 - Ceb - 0.12 - F min - 1.15 - dB G ms - 17.5 - - G ma - 13 - dB IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt, f = 1.8 GHz Power gain, maximum available1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz |S 21e|2 Transducer gain dB IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz - 14 - f = 3 GHz - 10 - IP 3 - 12.5 - P-1dB - -1 - Third order intercept point at output2) dBm VCE = 3 V, I C = 5 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2005-10-11 BFR340L3 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 6.12 42.228 2.4753 16.777 0.8956 0.2403 182 10.3 0.0017 0.5487 2.71 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = V fF ps mA V ns - 98.48 103 19.61 0.834 59.99 3.677 0.626 0 0 0.319 0 0.5 0.735 mA A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.4213 11.768 0.3253 3.632 0.01 5.2493 0.4172 0.262 222.63 0.3904 0.75 1.11 300 nA nA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C7 C1 L2 B Transistor Chip B' C' R1 L3 C E' C6 C2 L1 C5 C3 L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 = 0.575 0.575 0.275 33 28 131 8 8 24 300 204 nH nH nH fF fF fF fF fF fF fF Valid up to 6GHz E EHA07536 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 2005-10-11 Package TSLP-3-1 BFR340L3 Package Outline Bottom view 0.4 +0.1 0.6 0.05 0.5 0.035 2 1 0.05 3 0.65 0.05 3 1) 2 1 1) 0.05 MAX. 0.35 0.05 Pin 1 marking 2 x 0.15 0.035 2 x 0.25 0.035 1 0.25 0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout Type code BFR193L3 Laser marking Pin 1 marking Example Standard Packing Reel o180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 5 2005-10-11 BFR340L3 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. 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