SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Recommended for 75W Audio Frequency C Amplifier Output Stage. J H Complementary to TIP35C. G Icmax:-25A. L D d MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Collector Current IC -25 A Base Current IB -5.0 A PC 125 W Tj 150 Tstg -55 150 Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC P 1 P 2 T M 3 DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 3.2 + 0.6+0.3/-0.1 1. BASE 2. COLLECTOR 3. EMITTER TO-3P(N) ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -10 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A V(BR)CEO IC=-50mA, IB=0 -100 - - V Collector-emitter Breakdown Voltage hFE(1) (Note) VCE=-5V, IC=-1.5A 55 - 160 hFE(2) VCE=-4V, IC=-15A 15 - - VCE(sat)(1) IC=-15A, IB=-1.5A - - -1.8 VCE(sat)(2) IC=-25A, IB=-5.0A - - -4.0 Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V Transition Frequency fT VCE=-5V, IC=-1A 3.0 - - MHz DC Current Gain Collector-Emitter Saturation Voltage Note : hFE(1) Classification R:55~110, 2001. 1. 18 V O:80~160 Revision No : 3 1/2 TIP36C 2001. 1. 18 Revision No : 3 2/2