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FGH40T120SMDL4 1200 V, 40 A FS Trench IGBT Features General Description * * * * * * Using innovative field stop trench IGBT technology, Fairchild(R)'s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. FS Trench Technology, Positive Temperature Coefficient Excellent Switching Performance due to Kelvin Emitter Pin Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A 100% of the Parts tested for ILM(1) High Input Impedance RoHS Compliant Applications * Solar Inverter, Welder, UPS and PFC applications E1: Kelvin Emitter C E2 E1 G E2: Power Emitter Absolute Maximum Ratings T C Symbol VCES VGES = 25C unless otherwise noted. Description FGH40T120SMDL4 Unit Collector to Emitter Voltage 1200 V Gate to Emitter Voltage 25 Transient Gate to Emitter Voltage 30 V Collector Current @ TC = 25oC 80 Collector Current @ TC = 100oC 40 ILM (1) Clamped Inductive Load Current @ TC = 25oC 160 A ICM (2) Pulsed Collector Current 160 A IC Diode Continuous Forward Current IF Diode Continuous Forward Current IFM PD @ TC = 25oC 80 @ TC = 100oC 40 Diode Maximum Forward Current A A 240 o Maximum Power Dissipation @ TC = 25 C 555 Maximum Power Dissipation @ TC = 100oC 277 A W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o Maximum Lead Temperature for Soldering, TL 1/8" from Case for 5 Seconds C 300 oC FGH40T120SMDL4 Unit Thermal Characteristics Symbol Parameter RJC(IGBT) Thermal Resistance, Junction to Case 0.27 oC/W RJC(Diode) Thermal Resistance, Junction to Case 0.89 oC/W RJA Thermal Resistance, Junction to Ambient 40 o C/W Notes: 1. Vcc = 600 V, VGE = 15 V, IC = 160 A, RG = 20 , inductive load. 2. Limited by Tjmax. (c)2015 Fairchild Semiconductor Corporation FGH40T120SMDL4 Rev. 1.0 1 www.fairchildsemi.com FGH40T120SMDL4 -- 1200 V, 40 A Field Stop Trench IGBT April 2015 Device Marking Device Package Reel Size Tape Width Quantity FGH40T120SMDL4 FGH40T120SMDL4 TO-247 A04 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 40 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.9 6.2 7.5 V IC = 40 A, VGE = 15 V, TC = 25oC - 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 175oC - 2.0 - V - 4300 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz - 180 - pF - 100 - pF Switching Characcteristics td(on) Turn-On Delay Time - 44 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time - 464 - ns tf Fall Time - 24 - ns Eon Turn-On Switching Loss - 2.24 - mJ Eoff Turn-Off Switching Loss - 1.02 - mJ VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 3.26 - mJ td(on) Turn-On Delay Time - 42 - ns tr Rise Time - 48 - ns td(off) Turn-Off Delay Time - 518 - ns tf Fall Time - 24 - ns Eon Turn-On Switching Loss - 3.11 - mJ Eoff Turn-Off Switching Loss - 2.01 - mJ Ets Total Switching Loss - 5.12 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge (c)2015 Fairchild Semiconductor Corporation FGH40T120SMDL4 Rev. 1.0 VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 175oC VCE = 600 V, IC = 40 A, VGE = 15 V 2 - 370 - nC - 23 - nC - 210 - nC www.fairchildsemi.com FGH40T120SMDL4 -- 1200 V, 40 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Parameter TC = 25C unless otherwise noted. Test Conditions Min. Typ. Max. Unit IF = 40 A, TC = 25 C - 3.8 4.8 V o - 2.7 - V o VFM Diode Forward Voltage IF = 40 A, TC = 175 C trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A, Diode Peak Reverse Recovery Current diF/dt = 200 A/us, TC = 175oC Diode Reverse Recovery Charge - 18.0 - A - 1800 - nC Irr Qrr (c)2015 Fairchild Semiconductor Corporation FGH40T120SMDL4 Rev. 1.0 VR = 600 V, IF = 40 A, diF/dt = 200 A/us, TC = 25oC 3 - 65 - ns - 7.2 - A - 234 - nC - 200 - ns www.fairchildsemi.com FGH40T120SMDL4 -- 1200 V, 40 A Field Stop Trench IGBT Electrical Characteristics of the DIODE Figure 1. Typical Output Characteristics 300 Figure 2. Typical Output Characteristics 300 o TC = 25 C 20V Collector Current, IC [A] Collector Current, IC [A] 200 12V 150 100 VGE=10V 150 0 1 2 3 4 5 6 7 8 Collector-Emitter Voltage, VCE [V] 9 VGE=10V 0 10 0 1 4 Collector Emitter Voltage, VCE [V] o TC = 25 C 120 o TC = 175 C --- 80 40 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] Collector Emitter Voltage, VCE [V] o 16 80A 40A IC=20A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] (c)2015 Fairchild Semiconductor Corporation FGH40T120SMDL4 Rev. 1.0 3 80A 40A 2 IC=20A 20 TC = 25 C 8 10 50 75 100 125 150 o Case Temperature TC [ C] 175 Figure 6. Saturation Voltage vs. VGE Common Emitter 12 9 Common Emitter VGE = 15V 1 25 5 Figure 5. Saturation Voltage vs. VGE 20 2 3 4 5 6 7 8 Collector-Emitter Voltage, VCE [V] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter VGE = 15V Collector Current, IC [A] 12V 100 160 Collector Emitter Voltage, VCE [V] 15V 50 Figure 3. Typical Saturation Voltage Characteristics 0 17V 200 50 0 20V 250 250 0 o TC = 175 C 15V 17V o TC = 175 C 16 4 80A 12 40A 8 IC=20A 4 0 20 Common Emitter 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40T120SMDL4 -- 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 15 6000 Common Emitter VGE = 0V , f = 1MHz o Cies TC = 25 C Gate Emitter Voltage, VGE [V] 5000 Capacitance [pF] Figure 8. Gate Charge Characteristics 4000 3000 2000 Coes 1000 Crss 12 200V 400V VCC = 600V 9 6 3 Common Emitter o TC = 25 C 1 0 10 Collector-Emitter Voltage, VCE [V] Figure 9. Turn-on Characteristics vs. Gate Resistance 50 100 150 200 250 300 Gate Charge, Qg [nC] Switching Time [ns] 1000 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 40A td(off) 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 0 10 20 30 40 50 Gate Resistance, RG [] 1 60 70 Figure 11. Switching Loss vs. Gate Resistance 10 20 30 40 50 Gate Resistance, RG [] 60 70 300 Switching Time [ns] Switching Loss [mJ] 0 Figure 12. Turn-on Characteristics vs. Collector Current 8 Eon Eoff Common Emitter VCC = 600V, VGE = 15V IC = 40A 1 100 tr td(on) o TC = 25 C o o TC = 175 C 0 10 20 30 40 50 Gate Resistance, RG [] (c)2015 Fairchild Semiconductor Corporation FGH40T120SMDL4 Rev. 1.0 Common Emitter VGE = 15V, RG = 10 o TC = 25 C 0.5 400 10000 tr 10 350 Figure 10. Turn-off Characteristics vs. Gate Resistance 300 Switching Time [ns] 0 TC = 175 C 60 10 10 70 20 30 40 50 60 70 80 Collector Current, IC [A] 5 www.fairchildsemi.com FGH40T120SMDL4 -- 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 10 1000 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 10 Eoff 1 Common Emitter VGE = 15V, RG = 10 o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 1 10 20 30 40 50 60 70 0.1 10 80 20 Figure 15. Load Current vs. Frequency 200 Collector Current, Ic [A] Collector Current, IC [A] o TC = 100 C 80 40 Duty cycle : 50% o T = 100 C 70 80 10s 100k 1ms 10 ms 10 DC Operation 1 Single Nonrepetitive o 0.1 0.01 0.1 1M Switching Frequency, f [Hz] Figure 17. Forward Characteristics 100s IcMAX (Continuous) C Powe Dissipation = 277 W Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 18. Reverse Recovery Current Reverse Recovery Current, Irr [A] 21 100 Forward Current, IF [A] 60 100 160 10k 50 IcMAX (Pulsed) load Current : peak of square wave 0 1k 40 Figure 16. SOA Characteristics VCC = 600V 120 30 Collector Current, IC [A] Collector Current, IC [A] 10 o TC = 25 C o TC = 25 C 18 T = 175oC C diF/dt = 200A/s 15 12 diF/dt = 100A/s 9 diF/dt = 200A/s 6 diF/dt = 100A/s 3 o TC = 175 C --- 1 0 1 2 3 Forward Voltage, VF [V] (c)2015 Fairchild Semiconductor Corporation FGH40T120SMDL4 Rev. 1.0 4 0 5 6 0 20 40 60 Forward Current, IF [A] 80 www.fairchildsemi.com FGH40T120SMDL4 -- 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge 3000 360 o o o 300 TC = 175 C Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] TC = 25 C --- 240 180 di/dt = 200A/s di/dt = 100A/s 120 60 0 0 20 40 60 TC = 25 C 2500 --- 2000 1500 di/dt = 100A/s 1000 di/dt = 200A/s 500 0 80 o TC = 175 C 0 20 40 60 80 Forward Current, IF [A] Forward Current, IF [A] Figure 21. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.3 0.1 0.01 PDM 0.05 t1 0.02 0.01 1E-3 1E-6 single pulse 1E-5 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 t1, Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of Diode 2 Thermal Response [Zthjc] 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 PDM t1 single pulse 1E-3 1E-5 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 t1, Rectangular Pulse Duration [sec] (c)2015 Fairchild Semiconductor Corporation FGH40T120SMDL4 Rev. 1.0 7 www.fairchildsemi.com FGH40T120SMDL4 -- 1200 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics 15.80 15.40 A 5.20 4.80 B 13.20 12.80 2.20 1.80 6.37 5.97 5.20 4.80 1.37 0.97 22.74 22.34 1.60 1.20 (3X) 1 5.08 B A M 2.82 2.42 18.62 18.22 2.42 2.02 16.50 16.00 3.80 3.40 0.254 M 1.20 4 4 0.70 0.50 1.33 1.07 (4X) 0.254 M 7.00 6.60 B A M 2.70 2.10 2.54 2X NOTES: A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE. B. DIMENSIONS ARE EXCLUSIVE OF BURRS,MOLD FLASH,AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DRAWING CONFORMS TO ASME Y14.5-2009. F. DRAWING FILENAME;MKT-TO247A04_REV02. 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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