SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).
COMPLEMENTARY TYPE FZT649
PARTMARKING DETAIL FZT749
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -8 A
Continuous Collector Current IC-3 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO -35 V IC=-100µA
V(BR)CEO -25 V IC=-10mA*
V(BR)EBO -5 V IE=-100µA
Collector Cut-Off
Currents
ICBO -0.1
-10 µA
µA
VCB
=-30V
VCB
=-30V,T
amb
=100°C
IEBO -0.1 µAVEB
=4V
Saturation Voltages VCE(sat) -0.12
-0.40
-0.3
-0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE 70
100
75
15
200
200
150
50
300
IC=-50mA, VCE
=-2V*
IC=-1A, VCE
=-2V*
IC=-2A, VCE
=-2V*
IC=-6A, VCE
=-2V*
Transition Frequency fT100 160 MHz IC=-100mA, VCE
=-5V
f=100MHz
Output Capacitance Cobo 55 100 pF VCB
=-10V f=1MHz
Switching Times ton 40 ns IC=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 450 ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT749
FZT749
C
C
E
B
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Gain
V - (Volts)
V - (Volts)
I- Collector Current (Amps)
V
CE
- Collector Voltage (Volts)
Safe Operating Area
110100
0.01
0.1
1.0
Single Pulse Test at T
amb
=25°C
40
80
120
160
200
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.001 1
0.01 0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
V
CE
=2V I
C
/I
B
=10
V
CE
=2V
V
CE
=-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
0.001 1
0.01 0.1 10
I
C
/I
B
=100
0.001 1
0.01 0.1 10
0
1.2
1.6
1.8
1.4
I
C
/I
B
=100
I
C
/I
B
=10
0.001 1
0.01 0.1 10
10
10
D.C.
1s
100ms
10ms
1.0ms
100
µ
s
3 - 2323 - 233
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).
COMPLEMENTARY TYPE FZT649
PARTMARKING DETAIL FZT749
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -8 A
Continuous Collector Current IC-3 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO -35 V IC=-100µA
V(BR)CEO -25 V IC=-10mA*
V(BR)EBO -5 V IE=-100µA
Collector Cut-Off
Currents
ICBO -0.1
-10 µA
µA
VCB
=-30V
VCB
=-30V,T
amb
=100°C
IEBO -0.1 µAVEB
=4V
Saturation Voltages VCE(sat) -0.12
-0.40
-0.3
-0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE 70
100
75
15
200
200
150
50
300
IC=-50mA, VCE
=-2V*
IC=-1A, VCE
=-2V*
IC=-2A, VCE
=-2V*
IC=-6A, VCE
=-2V*
Transition Frequency fT100 160 MHz IC=-100mA, VCE
=-5V
f=100MHz
Output Capacitance Cobo 55 100 pF VCB
=-10V f=1MHz
Switching Times ton 40 ns IC=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 450 ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT749
FZT749
C
C
E
B
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Gain
V - (Volts)
V - (Volts)
I- Collector Current (Amps)
V
CE
- Collector Voltage (Volts)
Safe Operating Area
110100
0.01
0.1
1.0
Single Pulse Test at T
amb
=25°C
40
80
120
160
200
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
0.001 1
0.01 0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
V
CE
=2V I
C
/I
B
=10
V
CE
=2V
V
CE
=-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
0.001 1
0.01 0.1 10
I
C
/I
B
=100
0.001 1
0.01 0.1 10
0
1.2
1.6
1.8
1.4
I
C
/I
B
=100
I
C
/I
B
=10
0.001 1
0.01 0.1 10
10
10
D.C.
1s
100ms
10ms
1.0ms
100
µ
s
3 - 2323 - 233
