NPN SILICON SIGNAL ; MEDIUM CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES Veo @ bn Ccb Specifi- 1 re @1omA amA Pr @ 10V fr Package cation @ SV, Min. Max. Ta= 25C Typical Typical Outline Sheet Type 2mA ivy iN) {mW) (pF) (MHz) Cornments No. No. 2N3402 75-225. 95 : 2N3403 j vee Vee : . _ 03: 560! BO: 150 1.2 40.69 2N3404 78-225 50 : eo ee Bee 2N3405 180-540. 2N3414 : 79.225. 06 2N3415 . 180- a woe Bs : 03 360 26.0 150 1 40.69 2N3416 75-225 an Ee ro ire 50 2N3417 180-540 2N4424 380.541 . 360 1 o | 2NAA24 180540 40 0.3 _ 150 40.19 2N4425 180-540 oe 560! 1.2 Ss 2N5174 40-6002 75 : : 2N5175 55-1602 oss? 360 = Be 135 1 : 40:46" pn eene -100 : Be : : 2N5176 140-3002 2 gee 2N4256 100-500 30 2+ 360 Boo. 150 1 45.56 : {Vces) PiSe res Case is Outline No. 1 with J1" Heatsink 3 Vcesat) Max. @ Ic=10mA, Isa=1mA 2hre @ Icx==10mA, Vee=5V $Vcesat}) Max. @ Ic=50mA, la=25mA NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS Vettsaty Vero @ 500mA, Ccb Specifi- her @ 10mA 50mA Pr @ 10V PNP Package cation @ 2V, Min. Max. Ta= 25C Typical Compie- Outline Sheet Type 2mA (Vv) (Vv) (mW) (pF) ment Comments No. No. D33D21 60.2002 as oe D29E1 33022 : . D29E2 033024 60-120 mS oe D294 p33D25 ae D29E5 D33D26 ae : as D29E6 D33027 " ee D29E7 p33p29 | : a oS See D29E9 033030 cs D29E10 Prat Tc=25C, 1000mW 2 All units available with heatsink which raises Pr to 700mW, Ta==25C; to specify a heatsinked version add J1 to the part no. Example: A D33D21 with a heatsink becomes a D33D21J1. Package Outline No. 1.2.See page 20. 3745 min hee at Vce=2V, Ic=500mA 460 min hee at Vcee=2V, Ic500mA NPN SILICON SIGNAL MONOLITHIC DARLINGTON AMPLIFIERS Vice (sat) Vero @ 200mA, Ccb Specifi- @ 10mA 2mA T @ 10V Package cation Min. Max. Ta== 25C Typical Outline Sheet Type 1000 i) () (mW) {pF) Comments No. No. D16P1 2 MINE 12 vend eee : : 1 2N5305 2N5306 2N5306A 2N5307 2N5308 2N5308A Heat sinked versions available which raise Pr to 600mW at Ta==25C. Heatsinked versions are HS5305, HS5306, HS5307, HS5308. Package Outline No. 1.2. See page 20. 18