T4-LDS-0229, Rev. 1 (120717) ©2012 Microsemi Corporation Page 1 of 6
2N6790
Available on
commercial
versions
N-CH ANNEL MOSFET
Qualified per MIL-PRF-19500/555
Quali f i ed Levels:
JAN , JANTX, and
JANTXV
DESCRIPTION
This 2N6790 d evice is milit ary qu alified up to a JANTXV level for high-reliability applications.
Microsemi al so o ffers numerou s other products to meet hi gher and lower power voltage
regu lation app lications.
TO-205AF
(formerly TO-39)
Package
Also available in:
U-18 LCC Package
(s urf ace mount )
2N6790U
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6790.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555.
• RoHS compliant versi ons availabl e (commercial grade only).
APPLICAT IONS / BENE FITS
• High frequency operation.
• Lightweight package.
• ESD to class 1A.
MAXIMUM RATINGS @ TC = +25 °C unless oth er wis e not ed
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol Value Unit
Junction & Stor age T emperature
TJ, Tstg
-55 to +150
°C
Thermal Resistance Junction-to-Case
RӨJC
6.25
ºC/W
Drain to Gate Voltage
VDG
200
V
Drain – Source Voltage
VDS
200
V
Gate – Source Voltage
VGS
± 20
V
Continuous Drain Current @ T
C
= +25 °C
I
D1
3.5
A
Continuous Drain Current @ TC = +100 °C
ID2
2.25
A
Off-State Power Dissipation (1)
P
D1
20
W
Source Current – Drain Diode (Forward Biased VSD)
IS
3.5
A
Off-State Current
IDM
14
A (pk)
Drain to Source On State Resistance (2)
rDS(on)
0.80
Ω
Notes: 1. Derated linearl y by 0.16 W/°C for TC > +25 °C.
2. VGS = 10 V, I D = 2.25 A.
T4-LDS-0229, Rev. 1 (120717) ©2012 Microsemi Corporation Page 2 of 6
2N6790
• CASE: Hermetically sealed, kovar base, nick el cap.
• TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin (commercial grade only) plate.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: NPN (see package outline).
• WEIGHT: Approxim ately 1.064 grams.
• See Package Dimensions on last page.
JAN 2N6790 (e3)
Reliability Level
JAN=JAN level
JANTX=JANTX level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
ID
Drain current.
IF
Forward current.
TC
Case temperature.
VDD
Drain supply voltage.
VDS
Drain to source voltage.
VGS
Gate to source voltage.
T4-LDS-0229, Rev. 1 (120717) ©2012 Microsemi Corporation Page 3 of 6
2N6790
Paramete r s / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1 mA V(BR)DSS 200 V
Gate-Source Voltage (Threshol d)
VDS ≥ V GS, ID = 0.25 mA
VDS ≥ V GS, ID = 0.25 mA, Tj = +125 °C
VDS ≥ V GS, ID = 0.25 mA, Tj = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ±20 V, VDS = 0 V
VGS = ±20 V, VDS = 0 V, Tj = +125 °C
IGSS1
IGSS2
±100
±200 nA
Parameters / T est Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Drain Current
VGS = 0V, VDS = 160 V
VGS = 0V, VDS = 160 V, Tj = +125 °C
IDSS1
IDSS2
25
0.25
µA
mA
Stati c Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 2.25 A pulsed
r
DS(on)1
0.80
Ω
VGS = 10 V, ID = 3.5 A pulsed rDS(on)2 0.85 Ω
T
j
= +125 °C:
VGS = 10 V, ID = 2.25 A pulsed
rDS(on)3
1.50
Ω
Diode Forward Voltage
V
GS
= 0 V, I
D
= 3.5 A pulsed
VGS = 0 V, ID = 2.8 A pulsed
VSD 1.5 V
DYNAMIC CHARACT ERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
nC
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q
g(on)
Qgs
Qgd
14.3
3.0
9.0
SWIT CHING CHARACT ERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Switching tim e tests:
Turn-on delay time
Rinse tim e
Turn-off delay time
Fall time
ID = 3.5A , VGS = 10 V
Gate drive impedance = 7.5 Ω,
VDD = 74 V
td(on)
tr
td(off)
t
f
40
50
50
50
ns
Reverse Recovery
Time:
di/dt = 100 A/µ s, VDD ≤ 50 V,
IF = 3.5 A trr 400 ns
T4-LDS-0229, Rev. 1 (120717) ©2012 Microsemi Corporation Page 4 of 6
2N6790
t1, RECTANG ULA R PULSE DURATION (SECONDS)
Figure 1
Thermal Imp edance Cu r ves
TC CASE TEMPERATURE (°C)
Figure 2
Max i mum D r ai n Current vs. Case Temperatu r e Graph
ID DRAIN CURRENT (AMPERES)
THERMAL RESPONSE (Z
ӨJC
)
T4-LDS-0229, Rev. 1 (120717) ©2012 Microsemi Corporation Page 5 of 6
2N6790
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3
Max i mum Safe Operating Ar ea
ID DRAIN CURRENT (AMPERES)
T4-LDS-0229, Rev. 1 (120717) ©2012 Microsemi Corporation Page 6 of 6
2N6790
SCHEMATIC CI RCUIT
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general infor mat ion only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from max imum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true
position ( TP) at maximum material condition ( MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance w ith ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = source, lead 2 = gate, lead 3 = drain.
Ltr
Dimensions
Inches
Millimeters
Notes
Min Max
Min Max
CD .305 .335 7.75 8.51
CH .160 .180 4.07 4.57
HD .335 .370 8.51 9.40
h
.009
.041
0.23
1.04
J
.028
.034
0.71
0.86
3
k
.029
.045
0.74
1.14
3, 4
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.7 19.05 7, 8, 12
LS .200 TP 5.08 TP 6
LU .016 .019 0.41 0.48 7, 8
L1
.050
1.27 7, 8
L2 .250
6.35
7, 8
P
.100
2.54
Q
.050
1.27 5
r
.010
0.25 10
α
45° TP
45° TP
6