DG4599E
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Power-off Isolation, 6 , 1.8 V to 5.5 V,
SPDT Analog Switch (2:1 Multiplexer)
DESCRIPTION
The DG4599E is a high performance single-pole,
double-throw (SPDT) analog switch designed for 1.8 V to
5.5 V operation with a single power rail.
Fabricated with high density CMOS technology, the device
achieves low on resistance of 6 and switch off
capacitance of 7 pF at a 5 V power supply and low power
consumption, and fast switching speeds.
The DG4599E features break before make switching
performance. It can handle both analog and digital signals
and permits signals with amplitudes of up to V+ to be
transmitted in either direction.
A power-off protection circuit is built into the switch to
prevent an abnormal current path through the signal pins
during the power-off condition. The part can withstand
greater than 7 kV ESD (human body model). The DG4599E
is available in the compact SC-70-6L package.
FEATURES
• Low switch on-resistance (6 )
• +1.8 V to +5.5 V single supply operation
• Isolation in powered-off mode
• Low voltage logic control
• Control logic inputs can go over V+
• Low parasitic capacitance
• Break before make switching
• Latch-up performance exceeds 200 mA per JESD 78
• High ESD rating
- 7000 V human body model (JS-001)
- 1000 V charge device model (JS-002)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
APPLICATIONS
• Battery powered devices
• Consumer and computing
• Instrumentation
• Medical equipment
• Control and automation
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Notes
• Logic “0” 0.8 V
• Logic “1” 2.4 V
Available
Available
NO (Source1)
COM
NC (Source2)
1
2
3
6
5
Top view
IN
V+
GND 4
SC-70
Device marking
H8
TRUTH TABLE
LOGIC NC NO
0OnOff
1OffOn
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C SC-70-6 DG4599EDL-T1-GE3
DG4599E
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Notes
a. All leads welded or soldered to PC board
b. Derate 3.1 mW/°C above 70 °C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
V+, COM, NC, NO, IN reference to GND -0.3 to 6 V
Continuous current (any terminal) ± 50 mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 200
Storage temperature -65 to +150 °C
Power dissipation (packages) a6-pin SC-70 b250 mW
ESD / HBM JS-001 7000 V
ESD / CDM JS-002 1000
Latch up Per JESD78 with 1.5 x voltage clamp 200 mA
SPECIFICATIONS (V+ = 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, ± 10 %
VIN = 0.8 V or 2.4 V e
TEMP.
a
LIMITS
-40 °C to +85 °C UNIT
MIN. bTYP. cMAX. b
Analog Switch
Analog signal range dVNO, VNC
VCOM Full 0 - V+ V
Drain-source on-resistance dRDS(on) V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room - 6 60
Full - 8 65
RDS(on) flatness dRDS(on)
flatness V+ = 5 V, VCOM = 1.5 V, 3.5 V, INO, INC = 10 mA Room - 0.4 -
RDS(on) match dRDS(on) V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room - 0.04 2
Switch-off leakage current f
INO(off),
INC(off) V+ = 5.5 V,
VNO, VNC = 1 V / 4.5 V, VCOM = 4.5 V / 1 V
Room -1.5 - 1.5
nA
Full -4 - 4
ICOM(off)
Room -1 - 1
Full -4 - 4
Channel-on leakage current fICOM(on) V+ = 5.5 V,
VNO, VNC = VCOM = 1 V / 4.5 V
Room -1 - 1
Full -4 - 4
Power-down leakage IPD
V+ = 0 V, VCOM = 5 V, NO/NC open, VIN = GND Full - - 5 μA
V+ = 0 V, VNO, VNC = 5 V, COM open, VIN = GND Full - - 5
Digital Control
Input high voltage VINH Full 2.4 - - V
Input low voltage VINL Full - - 0.8
Input capacitance dCIN Full - 6 - pF
Input current IINL or IINH VIN = 0 V or V+ Full -1 - 1 μA
Dynamic Characteristics
Turn-on time dtON
VNO or VNC = 3 V, RL = 300 , CL = 35 pF
Room - 10 30
ns
Full - - 40
Turn-off time dtOFF
Room - 8 25
Full - - 30
Break-before-make time dtBBM Room 1 - -
Charge injection dQINJ CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0 Room - 1 - pC
Off-isolation dOIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -78 - dB
Crosstalk dXTALK Room - -77 -
NO, NC off capacitance dCNO(off)
VIN = 0 V or V+, f = 1 MHz
Room - 7 -
pFCNC(off) Room - 7 -
Channel-on capacitance dCON Room - 13 -
Power Supply
Power supply current dI+ VIN = 0 V or V+ Full - 0.004 1 μA
DG4599E
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SPECIFICATIONS (V+ = 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, ± 10 %
VIN = 0.4 V or 2 V e
TEMP.
a
LIMITS
-40 °C to +85 °C UNIT
MIN. bTYP. cMAX. b
Analog Switch
Analog signal range dVNO, VNC
VCOM Full 0 - V+ V
Drain-source on-resistance dRDS(on) V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room - 13 95
Full - 15 105
RDS(on) flatness dRDS(on)
flatness V+ = 3 V, VCOM = 0 V to V+, INO, INC = 10 mA Room - 1.4 -
RDS(on) match dRDS(on) V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room - 0.03 2
Switch-off leakage current f
INO(off),
INC(off) V+ = 3.3 V,
VNO, VNC = 1 V / 3 V, VCOM = 3 V / 1 V
Room -400 - 400 pA
Full -4 - 4 nA
ICOM(off)
Room -800 - 800 pA
Full -8 - 8 nA
Channel-on leakage current fICOM(on) V+ = 3.3 V,
VNO, VNC = VCOM = 1 V / 3 V
Room -800 - 800 pA
Full -8 - 8 nA
Digital Control
Input high voltage VINH Full 2 - - V
Input low voltage VINL Full - - 0.4
Input capacitance dCIN Full - 6 - pF
Input current IINL or IINH VIN = 0 V or V+ Full -1 - 1 μA
Dynamic Characteristics
Turn-on time dtON
VNO or VNC = 2 V, RL = 300 , CL = 35 pF
Room - 13 45
ns
Full - - 55
Turn-off time dtOFF
Room - 9 35
Full - - 40
Break-before-make time dtBBM Room 1 - -
Charge injection dQINJ CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0 Room - 0.9 - pC
Off-isolation dOIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -78 - dB
Crosstalk dXTALK Room - -77 -
NO, NC off capacitance dCNO(off)
VIN = 0 V or V+, f = 1 MHz
Room - 7 -
pFCNC(off) Room - 7 -
Channel-on capacitance dCON Room - 14 -
Power Supply
Power supply current dI+ VIN = 0 V or V+ Full - 0.002 1 μA
DG4599E
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SPECIFICATIONS (V+ = 2.5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 2.5 V, ± 10 %
VIN = 0.4 V or 2 V e
TEMP. a
LIMITS
-40 °C to +85 °C UNIT
MIN. bTYP. cMAX. b
Analog Switch
Analog signal range dVNO, VNC
VCOM Full 0 - V+ V
Drain-source on-resistance dRDS(on) V+ = 2.2 V, VCOM = 1 V, INO, INC = 10 mA Room - 23 110
Full d- 24 120
RDS(on) flatness dRDS(on)
flatness V+ = 2.5 V, VCOM = 0 V to V+, INO, INC = 10 mA Room - 1.7 -
RDS(on) match dRDS(on) V+ = 2.2 V, VCOM = 1.2 V, INO, INC = 10 mA Room - 0.1 2
Switch-off leakage current f
INO(off),
INC(off) V+ = 2.7 V,
VNO, VNC = 0.5 V / 1.5 V, VCOM = 1.5 V / 0.5 V
Room -200 - 200 pA
Full d-3 - 3 nA
ICOM(off)
Room -200 - 200 pA
Full d-3 - 3 nA
Channel-on leakage current fICOM(on) V+ = 2.7 V,
VNO, VNC = VCOM = 0.5 V / 1.5 V
Room -200 - 200 pA
Full d-3 - 3 nA
Digital Control
Input high voltage VINH Full 2 - - V
Input low voltage VINL Full - - 0.4
Input capacitance dCIN Full - 6 - pF
Input current IINL or IINH VIN = 0 V or V+ Full -1 - 1 μA
Dynamic Characteristics
Turn-on time dtON
VNO or VNC = 1.5 V, RL = 300 , CL = 35 pF
Room - 16 50
ns
Full d--60
Turn-off time dtOFF
Room - 10 35
Full - - 45
Break-before-make time dtBBM Room d1--
Charge injection dQINJ CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0 Room - 0.9 - pC
Off-isolation dOIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -78 - dB
Crosstalk dXTALK Room - -77 -
NO, NC off capacitance dCNO(off)
VIN = 0 V or V+, f = 1 MHz
Room - 7 -
pFCNC(off) Room - 7 -
Channel-on capacitance dCON Room - 14 -
Power Supply
Power supply current dI+ VIN = 0 V or V+ Full - - 1 μA
DG4599E
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Notes
a. Room = 25 °C, full = as determined by the operating suffix
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
c. Typical values are for design aid only, not guaranteed nor subject to production testing
d. Guarantee by design, nor subjected to production test
e. VIN = input voltage to perform proper function
f. Guaranteed by 5 V leakage testing, not production tested
SPECIFICATIONS (V+ = 2 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 2 V, ± 10 %
VIN = 0.4 V or 1.6 V e
TEMP.
a
LIMITS
-40 °C to +85 °C UNIT
MIN. bTYP. cMAX. b
Analog Switch
Analog signal range dVNO, VNC
VCOM Full 0 - V+ V
Drain-source on-resistance dRDS(on) V+ = 1.8 V, VCOM = 1 V, INO, INC = 10 mA Room - 37 110
Full d- 36 120
RDS(on) flatness dRDS(on)
flatness V+ = 2 V, VCOM = 0 V to V+, INO, INC = 10 mA Room - 3 -
RDS(on) match dRDS(on) V+ = 1.8 V, VCOM = 1 V, INO, INC = 10 mA Room - 0.04 2
Switch-off leakage current f
INO(off),
INC(off) V+ = 2.2 V,
VNO, VNC = 0.5 V / 1.5 V, VCOM = 1.5 V / 0.5 V
Room -200 - 200 pA
Full d-3 - 3 nA
ICOM(off)
Room -200 - 200 pA
Full d-3 - 3 nA
Channel-on leakage current fICOM(on) V+ = 2.2 V,
VNO, VNC = VCOM = 0.5 V / 1.5 V
Room -200 - 200 pA
Full d-3 - 3 nA
Digital Control
Input high voltage VINH Full 1.6 - - V
Input low voltage VINL Full - - 0.4
Input capacitance dCIN Full - 6 - pF
Input current IINL or IINH VIN = 0 V or V+ Full -1 - 1 μA
Dynamic Characteristics
Turn-on time dtON
VNO or VNC = 1.5 V, RL = 300 , CL = 35 pF
Room - 21 50
ns
Full d--60
Turn-off time dtOFF
Room - 13 35
Full d--45
Break-before-make time dtBBM Room 1 - -
Charge injection dQINJ CL = 1 nF, VGEN = 0 V, VNO, VNC = 0 V, RGEN = 0 Room - 0.8 - pC
Off-isolation dOIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -78 - dB
Crosstalk dXTALK Room - -77 -
NO, NC off capacitance dCNO(off)
VIN = 0 V or V+, f = 1 MHz
Room - 7 -
pFCNC(off) Room - 7 -
Channel-on capacitance dCON Room - 14 -
Power Supply
Power supply current dI+ VIN = 0 V or V+ Full - - 1 μA
DG4599E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
RDS(on) vs. VCOM and Supply Voltage
RDS(on) vs. Analog Voltage and Temperature
RDS(on) vs. Analog Voltage and Temperature
RDS(on) vs. Analog Voltage and Temperature
RDS(on) vs. Analog Voltage and Temperature
Leakage Current vs. Temperature
10
100
1000
10000
0
5
10
15
20
25
30
35
40
45
50
012345
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
V+ = +1.8 V
V+ = +2.7 V
V+ = +3.0 V
V+ = +4.5 V
V+ = +5.5 V
I
S
= -10 mA
V+ = +3.3 V
10
100
1000
10000
2
4
6
8
10
12
012345
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +4.5 V
IS= 10 mA
10
100
1000
10000
6
8
10
12
14
16
18
0 0.5 1 1.5 2 2.5 3
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +2.7 V
I
S
= 10 mA
10
100
1000
10000
6
8
10
12
14
16
18
20
22
24
26
00.511.522.5
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +2.2 V
IS= 10 mA
10
100
1000
10000
6
11
16
21
26
31
36
41
46
0 0.5 1 1.5 2
Axis Title
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
VCOM - Analog Voltage (V)
2nd line
+85 °C
+25 °C
-40 °C
V+ = +1.8 V
IS= 10 mA
10
100
1000
10000
-2000
-1500
-1000
-500
0
500
-40-20 0 20406080
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
ICOM(OFF),V
COM = 4.5 V, VNC/NO = 1 V
INC/NO(OFF),V
COM = 1 V, VNC/NO = 4.5 V
V+ = +5.5 V
ICOM(ON),V
COM = 4.5 V
INC/NO(OFF),V
COM = 4.5 V, VNC/NO = 1 V
INC/NO(OFF),V
COM = 1 V, VNC/NO = 4.5 V
ICOM(ON),V
COM = 1 V
ICOM(OFF),V
COM = 1 V, VNC/NO = 4.5 V
DG4599E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Leakage Current vs. Temperature
Supply Current vs. Temperature
Supply Current vs. Temperature
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
Supply Current vs. Input Switching Frequency
Switching Time vs. Temperature
10
100
1000
10000
-200
-150
-100
-50
0
50
100
-40-20 0 20406080
Axis Title
1st line
2nd line
2nd line
Leakage Current (pA)
Temperature (°C)
2nd line
V+ = +3.3 V
I
COM(OFF)
,V
COM
= 3 V, V
NC/NO
= 1 V
I
COM(ON)
,V
COM
= 3 V
I
NC/NO(OFF)
,V
COM
= 3 V, V
NC/NO
= 1 V
I
NC/NO(OFF)
,V
COM
= 1 V, V
NC/NO
= 3 V
I
COM(ON)
,V
COM
= 1 V
I
COM(OFF)
,V
COM
= 1 V, V
NC/NO
= 3 V
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (nA)
Temperature (°C)
2nd line
V+ = +5.5 V
V
IN
= V+ or GND
10
100
1000
10000
30.0
40.0
50.0
60.0
70.0
-40-20 0 20406080100
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
Temperature (°C)
2nd line
V+ = +5 V
VIN = 1.8 V
10
100
1000
10000
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100K 1M 10M 100M 1G
Axis Title
1st line
2nd line
2nd line
Loss, OIRR, XTALK (dB)
Frequency (Hz)
2nd line
OIRR
V+ = +5 V
Loss
XTALK
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10 100 1000 10K 100K 1M 10M
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
Input Switching Frequency (Hz)
2nd line
V+ = +5 V
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
-50-30-101030507090
Axis Title
1st line
2nd line
2nd line
tON, tOFF - Switching Time (ns)
Temperature (°C)
2nd line
V+ = +3 V, tON
V+ = +3 V, tOFF
V+ = +5 V, tON
V+ = +5 V, tOFF
DG4599E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Switching Time vs. Temperature
Switching Threshold vs. Supply Voltage
Power Down Leakage Current vs. VCOM
Supply Current vs. Enable Input Voltage
Charge Injection vs. Analog Voltage
Power Down Leakage Current vs. Temperature
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-50-30-101030507090
Axis Title
1st line
2nd line
2nd line
tON, tOFF - Switching Time (ns)
Temperature (°C)
2nd line
V+ = +2.0 V, tOFF
V+ = +2.0 V, tON
V+ = +2.5 V, tON
V+ = +2.5 V, tOFF
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
1.52.53.54.55.5
Axis Title
1st line
2nd line
2nd line
VIN - Switching Threshold (V)
V+ - Supply Voltage (V)
2nd line
-40 °C to +85 °C
VINH
VINL
0
1
2
3
4
5
6
7
8
0246
COM(PD) Power Down Leakage Current (nA)I
VCOM (V)
2nd line
25 °C
-40 °C
85 °C
V+ = VIN = GND
10
100
1000
10000
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Axis Title
1st line
2nd line
2nd line
I+ - Supply Current (μA)
VIN (V)
2nd line
V+ = 3.0 V
V+ = 5 V
V+ = 2.5 V
V+ = 2 V
10
100
1000
10000
-20.0
-15.0
-10.0
-5.0
0
012345
Axis Title
1st line
2nd line
2nd line
QINJ - Charge Injection (pC)
VNC/NO - Analog Voltage (V)
2nd line
V+ = 5 V
V+ = 3 V
V+ = 2.5 V
V+ = 2 V
0
0.5
1
1.5
2
2.5
-40-20 0 20406080100
ICOM(PD) Power Down Leakage Current (nA)
Temperature (°C)
2nd line
V+ = VIN = GND,
VCOM = +3 V
DG4599E
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TEST CIRCUITS
Fig. 1 - Switching Time
Fig. 2 - Break-Before-Make Interval
Fig. 3 - Charge Injection
Switch
CL (includes xture and stray capacitance)
V+
IN
NO or NC
CL
35 pF
COM
Logic
Input
RL
300
VOUT
GND
V+
50 %
0 V
0 V
Logic
Input
Switch
Output
tON tOFF
Logic “1” = switch on
Logic input waveforms inverted for switches that have
the opposite logic sense.
Switch Output
3 V
0.9 x VOUT
tr < 20 ns
tf < 20 ns
VOUT =V
COM
RL
RL+R
ON
CL (includes fixture and stray capacitance)
NC
VNO
NO
VNC
0 V
3 V
0 V
Logic
Input
Switch
Output
VO
VNC = VNO
tr < 5 ns
tf < 5 ns
90 %
tDtD
IN
COM
V+
GND
V+
CL
35 pF
VO
RL
300 Ω
Off OnOn
IN
ΔVOUT
VOUT
Q = ΔVOUT x CL
CL = 1 nF
COM
Rgen
VOUT
NC or NO
3 V
IN
Vgen
GND
V+
V+
IN depends on switch configuration: input polarity
determined by sense of switch.
+
DG4599E
www.vishay.com Vishay Siliconix
S18-0420-Rev. C, 23-Apr-18 10 Document Number: 76618
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Fig. 4 - Off-Isolation
Fig. 5 - Channel Off / On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76618.
IN
GND
NC or NO
0 V, 2.4 V
10 nF
COM
Off Isolation = 20 log
V
NC/NO
V
COM
RL
Analyzer
V+
V+
COM
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
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