DMG6968U-7 - DIODES Incorporated - Datasheet.Directory

DMG6968U

Document number: DS31738 Rev. 5 - 2 1 of 6

www.diodes.com December 2011

DMG6968U

N-CHANNEL ENHAN CEMENT MODE MOSFET

Features

• Low On-Resistance

• 25mΩ @ VGS = 4.5V

• 29mΩ @ VGS = 2.5V

• 36mΩ @ VGS = 1.8V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminals Connections: See Diagram Below

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMG6968U-7 Commercial SOT23 3000/Tape & Reel

DMG6968UQ-7 Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View Internal Schematic To

View

ESD PROTECTED TO 2kV

Source

Gate

Protection

Diode

Gate

Drain

2N4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

M = Month (ex: 9 = September)

2N4

DMG6968U

Document number: DS31738 Rev. 5 - 2 2 of 6

www.diodes.com December 2011

DMG6968U

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 20 V

Gate-Source Voltage VGSS ±12 V

Continuous Drain Current (Note 4) Steady

State TA = 25°C

TA = 70°C ID 6.5

5.2 A

Pulsed Drain Current IDM 30 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) PD 1.3 W

Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 157 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = 25°C IDSS ⎯ ⎯ 1.0 μA VDS = 20V, VGS = 0V

Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±10V, VDS = 0V

Gate-Source Breakdown Voltage BVSGS ±12 - - V

VDS = 0V, IG = ±250μA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS

(

)

0.5 ⎯ 0.9 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON) ⎯ 21 25 mΩ VGS = 4.5V, ID = 6.5A

23 29 VGS = 2.5V, ID = 5.5A

28 36 VGS = 1.8V, ID = 3.5A

Forward Transfer Admittance |Yfs| ⎯ 8 ⎯ S VDS = 10V, ID = 5A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss ⎯ 151 ⎯ pF VDS = 10V, VGS = 0V

f = 1.0MHz

Output Capacitance Coss ⎯ 91 ⎯ pF

Reverse Transfer Capacitance Crss ⎯ 32 ⎯ pF

Total Gate Charge Q

⎯ 8.5 ⎯ nC VGS = 4.5V, V DS = 10V, ID = 6.5A

Gate-Source Charge Q

s ⎯ 1.6 ⎯ nC

Gate-Drain Charge Q

d ⎯ 2.8 ⎯ nC

Turn-On Delay Time tD

(

)

⎯ 54 ⎯ ns VDD = 10V, VGS = 4.5V,

RL = 10Ω, RG = 6Ω, ID = 1A

Turn-On Rise Time t

⎯ 66 ⎯ ns

Turn-Off Delay Time tD

(

off

)

⎯ 613 ⎯ ns

Turn-Off Fall Time tf ⎯ 205 ⎯ ns

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.

5. Short duration pulse test used to minimize self-heating effect.

DMG6968U

Document number: DS31738 Rev. 5 - 2 3 of 6

www.diodes.com December 2011

DMG6968U

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOL TAGE (V)

I, D

(A)

V = 1.5V

V = 2.0V

V = 3.0V

V = 4.5V

V = 10V

V = 2.5V

0.5 1 1.5 2

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

I, D

AIN

(A)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 5V

0.01

0.02

0.03

0.04

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs . Dr ain C ur rent and G at e Volt age

I , DRAIN-SOURCE CURRENT (A)

R , DRAIN-SOURCE ON-RESIST A NCE ( )

DS(ON)

V = 4.5V

V = 2.5V

V = 1.8V

0.01

0.02

0.03

0.04

0.05

0.06

04 8121620

I , DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs . Dr ai n Curr ent and Temp er atu r e

, D

AIN-S

N-

ESIS

E ( )

DS(ON)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

Fig . 5 On - R esist ance Variat ion wi t h Temper atur e

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

0.6

0.8

1.0

1.2

1.4

1.6

, D

AIN-S

ON-RESISTANCE (NORMALIZED)

DSON

V = 4.5V

I = 6.5A

V = 2.5V

I = 5.5A

0.01

0.02

0.03

0.04

0.05

0.06

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

R , DRAIN-SOURCE

ON-RESISTANCE ( )

DSON

V = 4.5V

I = 6.5A

V = 2.5V

I = 5.5A

DMG6968U

Document number: DS31738 Rev. 5 - 2 4 of 6

www.diodes.com December 2011

DMG6968U

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Fig. 7 Gate Threshold V ariation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA T URE (°C)

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 1mA

I = 250µA

0 0.2 0.4 0.6 0.8 1 1.2

T = 25°C

Fig . 8 Di ode Forw ar d Volta ge vs. Cu r re nt

V , SOURCE-DRAIN VOLTAGE (V)

I, S

(A)

100

150

200

250

300

350

400

450

500

048121620

Fig. 9 Typical Total Capacitance

V , DRAIN-SOURCE VOL TAGE (V)

E (p

)

iss

rss

oss

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

100

1,000

10,000

100,000

0 2 4 6 8 101214161820

V , DRAI N-SOURCE V OLTAGE (V)

I , LEAKA

(nA)

DSS

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig . 11 Transient Thermal Respon se

t , PULSE DURATION TIME (s)

0.001

0.01

0.1

r(t),

ANSIEN

MAL

ESIS

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) *

R = 162°C/W

P(pk) t

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

DMG6968U

Document number: DS31738 Rev. 5 - 2 5 of 6

www.diodes.com December 2011

DMG6968U

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

DMG6968U

Document number: DS31738 Rev. 5 - 2 6 of 6

www.diodes.com December 2011

DMG6968U

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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